公开(公告)号：US08058705B2

公开(公告)日：2011-11-15

申请号：US12551534

申请日：2009-08-31

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L21/20

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.

Abstract translation: 具有图案化结构的复合材料基板包括基板，第一介电层，第二介质层和氮化物半导体材料。 这里，第一电介质层层叠在基板上，第二介电层层叠在第一电介质层上，氮化物半导体材料层叠在第二电介质层上，其特征在于多个图案。

公开(公告)号：US07868346B2

公开(公告)日：2011-01-11

申请号：US11948464

申请日：2007-11-30

Applicant: Yih-Der Guo ,  Jenq-Dar Tsay ,  Po-Chun Liu

Inventor： Yih-Der Guo ,  Jenq-Dar Tsay ,  Po-Chun Liu

IPC: H01L33/48

CPC classification number: H05K3/4007 ,  H01L33/486 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/111 ,  H05K1/113 ,  H05K2201/09045 ,  H05K2201/10106 ,  Y10T29/49155 ,  H01L2224/05599

Abstract: An island submount used for carrying at least one light-emitting element having at least one electrical contact. The island submount includes a substrate, at least one island structure having a top surface and an inclined surface, and a conductive layer. The island structure is located on the substrate and corresponds to the electrical contact. The conductive layer is formed on the surface of the island structure and at least covers the top surface, so as to be electrically connected with the electrical contact. The island submount is capable of enhancing the light extraction efficiency of the light-emitting element, and avoids the energy loss due to re-absorption when the light emerging from below the light-emitting element is reflected back to the light-emitting element.

Abstract translation: 用于承载至少一个具有至少一个电触头的发光元件的岛基座。 岛基座包括基板，具有顶表面和倾斜表面的至少一个岛结构和导电层。 岛结构位于基板上并对应于电接触。 导电层形成在岛状结构的表面上，并且至少覆盖顶表面，从而与电触点电连接。 岛基座能够增强发光元件的光提取效率，并且当从发光元件下方出射的光被反射回发光元件时，可以避免由于再吸收而导致的能量损失。

公开(公告)号：US20100243987A1

公开(公告)日：2010-09-30

申请号：US12562145

申请日：2009-09-18

Applicant: Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

Inventor： Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/007

Abstract: A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed.

Abstract translation: 提供了一种发光二极管的装置及其制造方法。 LED器件通过在衬底上形成图案化外延层，发光结构等而制成。 在随后的工艺中，图案化的外延层用作弱化结构，并且可以自动断裂，从而形成粗糙的表面。 弱化结构形成一定高度，并具有支柱结构。 发光结构形成在弱化结构上。 在室温的冷却过程中，弱化结构自动断裂，从而形成粗糙的表面。

公开(公告)号：US07687378B2

公开(公告)日：2010-03-30

申请号：US11467167

申请日：2006-08-25

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L21/20

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

Abstract translation: 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

公开(公告)号：US20080006849A1

公开(公告)日：2008-01-10

申请号：US11467167

申请日：2006-08-25

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L29/76 ,  H01L29/745

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

Abstract translation: 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

公开(公告)号：US08674393B2

公开(公告)日：2014-03-18

申请号：US12975271

申请日：2010-12-21

Applicant: Yih-Der Guo ,  Chu-Li Chao ,  Yen-Hsiang Fang ,  Ruey-Chyn Yeh ,  Kun-Fong Lin

Inventor： Yih-Der Guo ,  Chu-Li Chao ,  Yen-Hsiang Fang ,  Ruey-Chyn Yeh ,  Kun-Fong Lin

IPC: H01L33/00

CPC classification number: H01L33/007 ,  C30B25/183 ,  C30B29/403 ,  H01L33/12

Abstract: A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.

Abstract translation: 描述了一种衬底结构，包括起始衬底，起始衬底上的晶体墩和掩模层。 掩模层覆盖每个晶墩的侧壁的上部，连接在其底部的晶体墩之间，并且通过晶体墩之间的空白空间与起始衬底分离。 还描述了外延衬底结构，其可以通过在上述衬底结构上生长外延层形成晶体墩而形成。 在外延层生长之后，晶体墩可能被破坏。

公开(公告)号：US08093081B2

公开(公告)日：2012-01-10

申请号：US12562145

申请日：2009-09-18

Applicant: Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

Inventor： Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/007

Abstract: A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed.

Abstract translation: 提供了一种发光二极管的装置及其制造方法。 LED器件通过在衬底上形成图案化外延层，发光结构等而制成。 在随后的工艺中，图案化的外延层用作弱化结构，并且可以自动断裂，从而形成粗糙的表面。 弱化结构形成一定高度，并具有支柱结构。 发光结构形成在弱化结构上。 在室温的冷却过程中，弱化结构自动断裂，从而形成粗糙的表面。

公开(公告)号：US20100181577A1

公开(公告)日：2010-07-22

申请号：US12749495

申请日：2010-03-29

Applicant: Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

Inventor： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

IPC: H01L29/20 ,  H01L29/12

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079

Abstract: There is provided a nitride semiconductor substrate. The nitride semiconductor substrate comprises a substrate, a patterned epitaxy layer, a protective layer and a gallium nitride semiconductor layer. The patterned epitaxy layer is disposed on the substrate, wherein the patterned epitaxy layer comprises a pier structure and the patterned epitaxy layer has an upper surface and a lower surface opposite to the upper surface and the lower surface faces to the substrate. The protective layer covers a portion of the upper surface of the patterned epitaxy layer to expose a top surface of the pier structure. The gallium nitride (GaN) semiconductor layer extends substantially across an entire area above the patterned epitaxy layer and connected to the exposed top surface of the pier structure.

Abstract translation: 提供了一种氮化物半导体衬底。 氮化物半导体衬底包括衬底，图案化外延层，保护层和氮化镓半导体层。 图案化外延层设置在基板上，其中图案化外延层包括墩结构，并且图案化外延层具有上表面和与上表面相对的下表面，下表面面向基板。 保护层覆盖图案化外延层的上表面的一部分以暴露码头结构的顶表面。 氮化镓（GaN）半导体层基本上延伸在图案化外延层上方的整个区域上并连接到暴露的墩结构的顶表面。

公开(公告)号：US4902376A

公开(公告)日：1990-02-20

申请号：US290994

申请日：1988-12-28

Applicant: Tzer-Perng Chen ,  Yih-Der Guo ,  Tsun-Tsai Chang

Inventor： Tzer-Perng Chen ,  Yih-Der Guo ,  Tsun-Tsai Chang

IPC: C30B11/00 ,  C30B29/42 ,  H01L21/208

CPC classification number: C30B11/00 ,  C30B29/42

Abstract: A process for growing a gallium arsenide single crystal from a polycrystalline gallium arsenide by the horizontal Bridgman technique includes (a) melting the polycrystalline gallium arsenide in a quartz boat which is placed in a quartz tube, at a temperature greater than 1238 deg C. but lower than the melting point of quartz, (b) decreasing the temperature of the melt of gallium arsenide from the seed/melt interface by moving a furnace to crystallize the melt, and (c) annealing the crystallized gallium arsenide during the crystal growth process at a temperature of 1100-1220 deg C.; wherein the above steps are carried out in the absence of an As vapor pressure controlling zone which is kept at a temperature of about 617 deg C. Due to the anealing step, the thermal stress is small and the dislocation hardly occurs. A short quartz tube can be employed due to the absence of the As zone.

Abstract translation: 通过水平Bridgman技术从多晶砷化镓生长砷化镓单晶的方法包括（a）在高于1238℃的温度下熔化置于石英管中的石英舟中的多晶砷化镓，但是 低于石英的熔点，（b）通过移动炉子使熔融物结晶，从晶种/熔融界面降低砷化镓熔体的温度，和（c）在晶体生长过程中退火结晶的砷化镓 温度为1100-1220摄氏度; 其中上述步骤在没有保持在约617℃温度的As蒸汽压力控制区的情况下进行。由于吸附步骤，热应力小，位错几乎不发生。 由于不存在As区，因此可以使用短的石英管。

公开(公告)号：US08221547B2

公开(公告)日：2012-07-17

申请号：US12177167

申请日：2008-07-22

Applicant: Po-Chun Liu ,  Yih-Der Guo ,  Tung-Wei Chi ,  Chu-Li Chao

Inventor： Po-Chun Liu ,  Yih-Der Guo ,  Tung-Wei Chi ,  Chu-Li Chao

IPC: B32B3/10 ,  C30B25/04

CPC classification number: C30B25/18 ,  C30B29/403 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.

Abstract translation: 提供了用于形成氮化物半导体衬底的初始衬底结构。 初始衬底结构包括衬底，图案化外延层和掩模层。 图案化的外延层位于基板上并且由多个柱形成。 掩模层位于衬底上并覆盖图案化外延层的一部分。 掩模层包括多个棒，并且在棒之间存在空间。 空间暴露图案化外延层的上表面的一部分。