Invention Grant
- Patent Title: Substrate structure and fabrication thereof, and light emitting diode devices fabricated from the same
- Patent Title (中): 基板结构及其制造以及由其制造的发光二极管器件
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Application No.: US12975271Application Date: 2010-12-21
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Publication No.: US08674393B2Publication Date: 2014-03-18
- Inventor: Yih-Der Guo , Chu-Li Chao , Yen-Hsiang Fang , Ruey-Chyn Yeh , Kun-Fong Lin
- Applicant: Yih-Der Guo , Chu-Li Chao , Yen-Hsiang Fang , Ruey-Chyn Yeh , Kun-Fong Lin
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.
Public/Granted literature
- US20120153338A1 SUBSTRATE STRUCTURE AND FABRICATION THEREOF, AND LIGHT EMITTING DIODE DEVICES FABRICATED FROM THE SAME Public/Granted day:2012-06-21
Information query
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