公开(公告)号：US5211761A

公开(公告)日：1993-05-18

申请号：US722949

申请日：1991-06-28

申请人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

发明人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

IPC分类号： H01L31/0392 ,  H01L31/078 ,  H01L31/18

CPC分类号： H01L31/182 ,  H01L31/03921 ,  H01L31/078 ,  Y02E10/546 ,  Y02P70/521

摘要： A photovoltaic device according to the present invention has a buffer layer on a heat-resistant substrate for enhancing the adhesion characteristic of the substrate, a first semiconductor thin film including polycrystalline silicon of one conductivity type formed by a liquid phase growth method, and a second semiconductor thin film of opposite conductivity type, formed in this order.

摘要翻译： 根据本发明的光电器件在耐热基板上具有用于增强基板的粘合特性的缓冲层，包括通过液相生长法形成的一种导电类型的多晶硅的第一半导体薄膜和第二半导体薄膜 具有相反导电型的半导体薄膜，依次形成。

公开(公告)号：US5183780A

公开(公告)日：1993-02-02

申请号：US658389

申请日：1991-02-20

申请人： Shigeru Noguchi ,  Satoshi Ishida ,  Hiroshi Iwata ,  Keiichi Sano ,  Shoichiro Nakayama

发明人： Shigeru Noguchi ,  Satoshi Ishida ,  Hiroshi Iwata ,  Keiichi Sano ,  Shoichiro Nakayama

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L21/225 ,  H01L21/285 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L29/92

CPC分类号： H01L29/78696 ,  H01L21/2022 ,  H01L21/2257 ,  H01L21/28525 ,  H01L27/1214 ,  H01L28/40 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618

摘要： In a method of fabricating a semiconductor device according to the present invention, a semiconductor film is formed on a substrate, and an insulator film is formed so as to cover the semiconductor film. Then, a dopant source is arranged on the insulator film and then, a region for electrical contact is irradiated with a high-energy beam through the dopant source. Consequently, the insulator film and the semiconductor film in the irradiated region are melted, to form a polycrystalline contact region having impurities supplied from the dopant source doped therein. Thus, the high-energy beam is irradiated to the region for electrical contact through the dopant source to form the polycrystalline contact region, thereby to make it possible to omit the patterning process such as etching processing for providing a contact hole.

摘要翻译： 在制造根据本发明的半导体器件的方法中，在衬底上形成半导体膜，并且形成绝缘膜以覆盖半导体膜。 然后，在绝缘膜上布置掺杂剂源，然后通过掺杂源用高能束照射用于电接触的区域。 因此，照射区域中的绝缘体膜和半导体膜被熔化，以形成从其中掺杂的掺杂剂源提供的杂质的多晶接触区域。 因此，高能束被照射到通过掺杂剂源进行电接触的区域以形成多晶接触区域，从而可以省略图案化处理，例如用于提供接触孔的蚀刻处理。

公开(公告)号：US5097338A

公开(公告)日：1992-03-17

申请号：US438087

申请日：1989-11-16

申请人： Hiroyuki Kuriyama ,  Kaneo Watanabe ,  Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

发明人： Hiroyuki Kuriyama ,  Kaneo Watanabe ,  Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

IPC分类号： H04N5/357 ,  H04N5/369

CPC分类号： H04N5/357

摘要： An image sensor includes a photodiode array having a number of photodiodes arranged in a linear line. Each of the photodiodes is connected to each of analog switches which are sequentially turned-on by a drive pulse. Each analog switch includes a parallel connection of a P-channel MOS-FET and an N-channel MOS-FET having the same gate capacitance. The drive pulse is applied to a gate of the P-channel MOS-FET through one inverter and to a gate of the N-channel MOS-FET through two inverters being connected in a cascade fashion. A delay time of the one inverter and a total delay time of the two inverters are set to be equal to each other, and therefore, the two MOS-FETs are simultaneously turned-on or -off in response to the same drive pulse. A dummy switch composed of a complementary MOS-FET circuit which acts in a completely reversed phase with respect to the analog switch is provided, and a switching noise occurring in the analog switch and a switching noise occurring in the dummy switch are canceled with each other at an output terminal.

摘要翻译： 图像传感器包括具有以线性线排列的多个光电二极管的光电二极管阵列。 每个光电二极管连接到通过驱动脉冲顺序导通的每个模拟开关。 每个模拟开关包括P沟道MOS-FET和具有相同栅极电容的N沟道MOS-FET的并联连接。 驱动脉冲通过一个反相器施加到P沟道MOS-FET的栅极，并通过两个逆变器串联连接到N沟道MOS-FET的栅极。 一个反相器的延迟时间和两个反相器的总延迟时间被设置为彼此相等，因此两个MOS-FET同时响应于相同的驱动脉冲而导通或断开。 提供由相对于模拟开关完全反相的互补MOS-FET电路构成的虚拟开关，并且在模拟开关中发生的开关噪声和在虚拟开关中发生的开关噪声彼此抵消 在输出端子。

公开(公告)号：US5061851A

公开(公告)日：1991-10-29

申请号：US602467

申请日：1990-10-23

申请人： Shigeru Noguchi

发明人： Shigeru Noguchi

IPC分类号： G01Q60/00 ,  G03F1/72 ,  G03F1/84 ,  G03F1/86 ,  H01J37/04 ,  H01J37/09 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01J37/304 ,  H01J37/04

摘要： The apparatus comprising an ion source producing an ion beam, a limiting aperture plate having a limiting aperture through which the ion beam passes, a condensor lens making the ion beam parallel, monitoring electrodes generating an electric field which deflect the paralleled ion beam, a monitoring aperture plate having a monitoring aperture and an objective lens focusing the ion beam is inspected. A voltage is applied to the monitoring electrodes to deflect the ion beam and an electric current which flows in the monitoring aperture plate is detected. A diameter of the limiting aperture is determined based on a change of the electric current with respect to deflecting of the ion beam. On a surface of a sample, secondary charged particles are generated by collision of the ion beam. Intensity of the particles can be detected instead of detecting the electric current. A dimameter of the limiting aperture can also be determined based on a change of the intensity with respect to deflecting of the ion beam.

摘要翻译： 该装置包括产生离子束的离子源，具有离子束通过的限制孔径的限制孔板，使离子束平行的聚光透镜，监测电极产生偏转平行离子束的电场，监测 检查具有监视孔的孔板和聚焦离子束的物镜。 对监控电极施加电压使偏离离子束，并且检测在监视孔板中流动的电流。 基于相对于离子束的偏转的电流的变化来确定限制孔径的直径。 在样品的表面上，通过离子束的碰撞产生二次带电粒子。 可以检测颗粒的强度，而不是检测电流。 还可以基于相对于离子束的偏转的强度的变化来确定限制孔的直径。

公开(公告)号：US4922111A

公开(公告)日：1990-05-01

申请号：US268086

申请日：1988-11-07

申请人： Yukinori Kuwano ,  Noriyuki Mori ,  Shoichi Nakano ,  Hisao Uehara ,  Mitsugu Kobayashi ,  Kaneo Watanabe ,  Shigeru Noguchi

发明人： Yukinori Kuwano ,  Noriyuki Mori ,  Shoichi Nakano ,  Hisao Uehara ,  Mitsugu Kobayashi ,  Kaneo Watanabe ,  Shigeru Noguchi

IPC分类号： G06K7/10 ,  G06T1/00 ,  H04N1/00 ,  H04N1/107 ,  H04N1/32

CPC分类号： G06K7/10881 ,  H04N1/107 ,  H04N1/32358 ,  H04N1/00204 ,  H04N2201/0048 ,  H04N2201/0051 ,  H04N2201/0446

摘要： A card type image reader comprises a rectangular card base and a reinforcing member provided on one side of the card base. A photodetector array in a straight line is provided on one end portion of the reinforcing member and the card base holds control circuit means and memory means. The control circuit means reads information of an original through the photodetector array in synchronization with a clock signal and stores the read information into the memory means.

摘要翻译： 卡式图像读取器包括矩形卡片基座和设置在卡片基座一侧的加强件。 在加强构件的一个端部上设置直线上的光电检测器阵列，并且卡座保持控制电路装置和存储装置。 控制电路装置通过与时钟信号同步地通过光电检测器阵列读取原稿的信息，并将读取的信息存储到存储装置中。

公开(公告)号：US4831429A

公开(公告)日：1989-05-16

申请号：US877315

申请日：1986-06-23

申请人： Saburo Nakashima ,  Shoichiro Nakayama ,  Shigeru Noguchi ,  Shoichi Nakano ,  Yukinori Kuwano ,  Kaneo Watanabe ,  Hiroyuki Kuriyama

发明人： Saburo Nakashima ,  Shoichiro Nakayama ,  Shigeru Noguchi ,  Shoichi Nakano ,  Yukinori Kuwano ,  Kaneo Watanabe ,  Hiroyuki Kuriyama

IPC分类号： H01L27/146

CPC分类号： H01L27/14665

摘要： A transparent photo detector device according to an aspect of the present invention comprises: a transparent insulator substrate; a plurality of light sensor elements dispersively disposed on a main surface of the substrate, said sensor element including a transparent front electrode, a semiconductor layer for photo electric function and an opaque back electrode formed in that order on the main surface of the substrate, said semiconductor layer being neither protracting from nor retracting into between said front and back electrodes; and a transparent wire pattern formed on the main surface of the substrate for electrically connecting the plurality of sensor elements.

摘要翻译： 根据本发明的一个方面的透明光电检测器件包括：透明绝缘体衬底; 多个光传感器元件分散地设置在基板的主表面上，所述传感器元件包括透明前电极，用于光电功能的半导体层和在基板的主表面上依次形成的不透明背电极，所述 半导体层既不从所述前电极和后电极伸出或缩回; 以及形成在所述基板的主表面上的用于电连接所述多个传感器元件的透明线图案。

公开(公告)号：US20070149606A1

公开(公告)日：2007-06-28

申请号：US10584240

申请日：2004-12-27

申请人： Atsushi Nakayama ,  Shigeru Noguchi ,  Yukito Furuya ,  Katsuhiko Okano

发明人： Atsushi Nakayama ,  Shigeru Noguchi ,  Yukito Furuya ,  Katsuhiko Okano

IPC分类号： A61K31/4015 ,  A61K31/24

CPC分类号： C07D211/42 ,  C07C201/12 ,  C07C205/56 ,  C07C227/04 ,  C07C229/42 ,  C07C231/02 ,  C07D209/42 ,  C07D403/12 ,  C07C233/15

摘要： The present invention provides an advantageous process for producing an intermediate which is useful for producing a compound which exhibits excellent VLA-4 inhibitory effect and safety. Intermediates (III) and (XIII) are produced through conversion through the following reaction schemes.

摘要翻译： 本发明提供了制备中间体的有利方法，其可用于制备显示出优异的VLA-4抑制效果和安全性的化合物。 通过以下反应方案转化制备中间体（III）和（XIII）。

公开(公告)号：US06991821B2

公开(公告)日：2006-01-31

申请号：US10025570

申请日：2001-12-26

申请人： Masaru Matsuura ,  Tomoko Takeuchi ,  Shigeru Noguchi ,  Jun Sasaki ,  Jun Yamanishi

发明人： Masaru Matsuura ,  Tomoko Takeuchi ,  Shigeru Noguchi ,  Jun Sasaki ,  Jun Yamanishi

IPC分类号： B65B3/00 ,  A23L1/20

CPC分类号： A23C20/025

摘要： A method of producing packed tofu that is easily released from the container, in which an aqueous ethanol solution or an aqueous solution of a magnesium salt and/or a calcium salt is previously applied to the inside of the container to be filled with soybean milk, or impact is given to a sealed container having tofu packed therein.

公开(公告)号：US06531176B1

公开(公告)日：2003-03-11

申请号：US09363434

申请日：1999-07-29

申请人： Shigeru Noguchi ,  Masaru Matsuura ,  Yoshiro Yamanaka ,  Jun Sasaki ,  Tomoko Takeuchi

发明人： Shigeru Noguchi ,  Masaru Matsuura ,  Yoshiro Yamanaka ,  Jun Sasaki ,  Tomoko Takeuchi

IPC分类号： A23L120

CPC分类号： A23C20/025

摘要： A method for producing tofu is described which includes the step of detecting the concentration of a coagulant in soybean milk. The coagulant concentration is detected by a coagulant concentration detector disposed downstream of a stirring apparatus in a soybean milk transfer circuit. The amount of addition of the coagulant is controlled by a coagulant concentration adjuster in accordance with the coagulant concentration detected by the coagulant concentration detector. This enables the mass production of tofu having a bouncy taste and excellent flavor.

摘要翻译： 描述了一种生产豆腐的方法，其包括检测豆浆中的凝结剂的浓度的步骤。 凝结剂浓度由设置在豆浆输送回路中的搅拌装置下游的凝结剂浓度检测器检测。 根据凝固剂浓度检测器检测出的凝结剂浓度，凝结剂浓度调节剂控制凝结剂的添加量。 这样可以大量生产具有弹性味道和优良风味的豆腐。

公开(公告)号：US5378289A

公开(公告)日：1995-01-03

申请号：US151271

申请日：1993-11-12

申请人： Shigeru Noguchi ,  Keiichi Sano ,  Hiroshi Iwata

发明人： Shigeru Noguchi ,  Keiichi Sano ,  Hiroshi Iwata

IPC分类号： H01L21/20 ,  H01L31/0236 ,  H01L31/04 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/0236 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

摘要： A mold of crystalline silicon having a textured surface is placed on an amorphous silicon film so that projecting portions of the textured surface are in contact with a surface of the silicon film. The amorphous silicon film is then heated for crystallizing the same by solid phase epitaxy, thereby forming a crystalline silicon film having a textured surface corresponding to that of the mold.

摘要翻译： 具有纹理表面的晶体硅的模具被放置在非晶硅膜上，使得纹理表面的突出部分与硅膜的表面接触。 然后通过固相外延加热非晶硅膜使其结晶，从而形成具有对应于模具的纹理表面的结晶硅膜。