公开(公告)号：US06879393B2

公开(公告)日：2005-04-12

申请号：US09920450

申请日：2001-08-01

申请人： Yasuhiro Koizumi ,  Shiaki Murai ,  Shigeru Noguchi ,  Katsuhide Tsuchiya

发明人： Yasuhiro Koizumi ,  Shiaki Murai ,  Shigeru Noguchi ,  Katsuhide Tsuchiya

IPC分类号： G01B11/30 ,  G01N21/896 ,  G01N21/956 ,  G03F1/26 ,  G03F1/68 ,  G03F1/84 ,  G01N21/00

CPC分类号： G01N21/95607 ,  G01N2021/95676 ,  G03F1/26 ,  G03F1/30 ,  G03F1/84

摘要： The present invention relates to a defect inspection apparatus for a phase shift mask that is capable of detecting phase shifter defects that cannot be detected by conventional inspection techniques, by a simple method using an optical method and a comparison of electric signals. In a defect inspection apparatus for a phase shift mask having a phase shifter pattern provided on a mask transparent substrate 1, after the phase shifter pattern has been formed, a phase shifter defect inspection is performed from the mask transparent substrate 1 side of the phase shift mask 1. To perform the defect inspection, light 12 is applied to the phase shift mask 1 from the mask transparent substrate 1 side thereof, and reflection images of at least two different phase shifter pattern fabricated regions are captured by photoelectric conversion light-receiving elements 15a and 15b. The respective image signals 17 and 18 of the reflection images are compared with each other to detect a defect on the mask from the difference between the signals.

摘要翻译： 本发明涉及一种用于通过使用光学方法的简单方法和电信号的比较来检测常规检查技术无法检测的移相器缺陷的相移掩模的缺陷检查装置。 在具有设置在掩模透明基板1上的移相器图案的相移掩模的缺陷检查装置中，在形成移相器图案之后，从相移的掩模透明基板1侧进行移相器缺陷检查 掩模1.为了进行缺陷检查，从掩模透明基板1侧将光12施加到相移掩模1，并且通过光电转换光接收元件捕获至少两个不同的移相器图案制造区域的反射图像 15a和15b。 将反射图像的各图像信号17和18相互比较，以从信号之间的差异检测掩模上的缺陷。

公开(公告)号：US5455430A

公开(公告)日：1995-10-03

申请号：US922579

申请日：1992-07-30

申请人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

发明人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

IPC分类号： H01L29/04 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/20 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/0745 ,  H01L29/04 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： The disclosure relates to a semiconductor device comprising silicon having a substrate composed of low grade silicon, a silicon layer whose silicon purity is higher than that of the low grade silicon formed on the substrate and an electrode formed on the silicon layer. In the device, the low grade silicon may be selected from metallurgical grade silicon and silicon whose purity is less than 99.99%, and the silicon layer may be over 99.999% purity or semiconductor grade.

摘要翻译： 本公开涉及一种半导体器件，其包括具有由低等级硅构成的衬底的硅，其硅纯度高于形成在衬底上的低等级硅的硅纯度的硅层和形成在硅层上的电极。 在该器件中，低等级硅可以选自纯度低于99.99％的冶金级硅和硅，并且硅层的纯度可以超过99.999％或半导体级。

公开(公告)号：US07893279B2

公开(公告)日：2011-02-22

申请号：US12574907

申请日：2009-10-07

申请人： Makoto Ono ,  Shigeru Noguchi

发明人： Makoto Ono ,  Shigeru Noguchi

IPC分类号： C07D209/02

CPC分类号： C07D403/12

摘要： The present invention provides a VLA-4 inhibitor having high water-solubility and excellent long-term stability; i.e., sodium trans-4-[1-[2,5-dichloro-4-[(1-methyl-1H-3-indolylcarbonyl)amino]phenylacetyl]-(4S)-methoxy-(2S)-pyrrolidinylmethoxy]cyclohexanecarboxylate pentahydrate.

摘要翻译： 本发明提供了具有高水溶性和优异的长期稳定性的VLA-4抑制剂; 即反式-4- [1- [2,5-二氯-4 - [（1-甲基-1H-吲哚基羰基）氨基]苯基乙酰基] - （4S） - 甲氧基 - （2S） - 吡咯烷基甲氧基]环己烷羧酸酯五水合物 。

公开(公告)号：US06337400B1

公开(公告)日：2002-01-08

申请号：US09640879

申请日：2000-08-18

申请人： Shinji Kamihara ,  Kazuaki Kanai ,  Shigeru Noguchi

发明人： Shinji Kamihara ,  Kazuaki Kanai ,  Shigeru Noguchi

IPC分类号： C07D22102

CPC分类号： C07D471/04

摘要： Described is a process for the preparation of Compound (7) in accordance with the following reaction scheme by reacting Compound (5) with ethylene glycol in a solvent in the presence of a Lewis acid, thereby obtaining Compound (6), and then reacting the resulting compound with a carbonate diester in a solvent in the presence of a metal alkoxide (R1, R6 each represents a C1-6 alkyl group or the like and R5 represents H or C1-5 alkyl group). Compound (7) so obtained is useful as an intermediate for camptothecins useful as antitumor agents.

摘要翻译： 描述根据以下反应方案通过使化合物（5）与乙二醇在溶剂中在路易斯酸存在下反应制备化合物（7）的方法，从而得到化合物（6），然后使 在金属醇盐（R1，R6各自表示C1-6烷基等，R5表示H或C1-5烷基）的溶剂中，将碳酸二酯与碳酸二酯反应，得到的化合物（7）为 作为可用作抗肿瘤剂的喜树碱的中间体。

公开(公告)号：US5401336A

公开(公告)日：1995-03-28

申请号：US151254

申请日：1993-11-12

申请人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

发明人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

IPC分类号： H01L31/04 ,  H01L31/0236 ,  H01L31/072 ,  H01L31/075 ,  H01L31/078

CPC分类号： H01L31/0236 ,  H01L31/0747 ,  Y02E10/50

摘要： A photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin film arranged on portions of an n-type crystalline silicon substrate, a collecting electrode arranged on the amorphous silicon thin film, and an insulating layer arranged around the portions where the amorphous silicon thin film is formed. Thus, a pin junction is formed only below the collecting electrode.

摘要翻译： 光电器件包括i型非晶硅薄膜和p型非晶硅薄膜，其布置在n型晶体硅衬底的部分上，设置在非晶硅薄膜上的集电极和布置在非晶硅薄膜上的绝缘层 形成非晶硅薄膜的部分。 因此，仅在集电极下形成pin结。

公开(公告)号：US5164596A

公开(公告)日：1992-11-17

申请号：US848031

申请日：1992-03-09

申请人： Shigeru Noguchi ,  Yasushi Kawai

发明人： Shigeru Noguchi ,  Yasushi Kawai

IPC分类号： H01L21/027 ,  B23K15/00 ,  B23K15/02 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/305

CPC分类号： H01J37/3056 ,  B23K15/0013 ,  B23K15/02 ,  H01J37/026 ,  H01J2237/0044

摘要： An ion beam I is irradiated from an ion gun 10 onto a sample S on an XY stage 100, and an electron shower E is irradiated onto the sample S. Electrification of the sample by ion is neutralized by irradiation of the electron shower E. In the case of adjusting the electron shower E, a drive system 200 is driven by a control signal from a control unit 300 to scan a spot of the electron shower E by a Faraday cup F positioned at a corner of the XY stage 100. Detected current values of the Faraday cup F at respective scanning positions are amplified at an amplifier 210. The current values thus amplified are digitized at an A/D converter 220, and are then delivered to the control unit 300. The control unit 300 displays the intensity distribution of the electron shower E obtained by this scanning on a display unit 400.

摘要翻译： 从离子枪10将离子束I照射到XY台100上的样品S上，并且将电子喷淋器E照射到样品S上。通过电子喷淋器E的照射将离子的电化中和。在 在调整电子淋浴器E的情况下，通过来自控制单元300的控制信号来驱动驱动系统200，以通过位于XY平台100的拐角处的法拉第杯F来扫描电子淋浴E的点。检测到的电流 各个扫描位置处的法拉第杯F的值在放大器210处被放大。如此放大的电流值在A / D转换器220被数字化，然后被传送到控制单元300.控制单元300显示强度分布 通过该扫描获得的电子淋浴E.

公开(公告)号：US5144391A

公开(公告)日：1992-09-01

申请号：US658386

申请日：1991-02-20

申请人： Hiroshi Iwata ,  Shigeru Noguchi ,  Satoshi Ishida ,  Keiichi Sano ,  Shoichiro Nakayama

发明人： Hiroshi Iwata ,  Shigeru Noguchi ,  Satoshi Ishida ,  Keiichi Sano ,  Shoichiro Nakayama

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/42384

摘要： A semiconductor device according to the present invention comprises a semiconductor thin film, and first and second insulator films formed in such arrangement that the semiconductor thin film being sandwiched therebetween. First and second graded layers each containing a constitutent element of the semiconductor thin film and impurities and having a content of the impurities decreased in the direction of the semiconductor thin film are interposed between the semiconductor thin film and the respective insulator films, thereby to relax internal stress produced in the junction interfaces of the semiconductor thin film and the insulator films and to prevent cracking from occurring in the junction interfaces.

摘要翻译： 根据本发明的半导体器件包括半导体薄膜，以及将半导体薄膜夹在其间的结构形成的第一和第二绝缘膜。 每个包含半导体薄膜的元素的第一和第二渐变层以及在半导体薄膜的方向上具有降低的杂质含量的杂质插入在半导体薄膜和各个绝缘体膜之间，从而使内部 在半导体薄膜和绝缘膜的接合界面产生的应力，并防止在接合界面发生裂纹。

公开(公告)号：US20070149606A1

公开(公告)日：2007-06-28

申请号：US10584240

申请日：2004-12-27

申请人： Atsushi Nakayama ,  Shigeru Noguchi ,  Yukito Furuya ,  Katsuhiko Okano

发明人： Atsushi Nakayama ,  Shigeru Noguchi ,  Yukito Furuya ,  Katsuhiko Okano

IPC分类号： A61K31/4015 ,  A61K31/24

CPC分类号： C07D211/42 ,  C07C201/12 ,  C07C205/56 ,  C07C227/04 ,  C07C229/42 ,  C07C231/02 ,  C07D209/42 ,  C07D403/12 ,  C07C233/15

摘要： The present invention provides an advantageous process for producing an intermediate which is useful for producing a compound which exhibits excellent VLA-4 inhibitory effect and safety. Intermediates (III) and (XIII) are produced through conversion through the following reaction schemes.

摘要翻译： 本发明提供了制备中间体的有利方法，其可用于制备显示出优异的VLA-4抑制效果和安全性的化合物。 通过以下反应方案转化制备中间体（III）和（XIII）。

公开(公告)号：US06991821B2

公开(公告)日：2006-01-31

申请号：US10025570

申请日：2001-12-26

申请人： Masaru Matsuura ,  Tomoko Takeuchi ,  Shigeru Noguchi ,  Jun Sasaki ,  Jun Yamanishi

发明人： Masaru Matsuura ,  Tomoko Takeuchi ,  Shigeru Noguchi ,  Jun Sasaki ,  Jun Yamanishi

IPC分类号： B65B3/00 ,  A23L1/20

CPC分类号： A23C20/025

摘要： A method of producing packed tofu that is easily released from the container, in which an aqueous ethanol solution or an aqueous solution of a magnesium salt and/or a calcium salt is previously applied to the inside of the container to be filled with soybean milk, or impact is given to a sealed container having tofu packed therein.

公开(公告)号：US06531176B1

公开(公告)日：2003-03-11

申请号：US09363434

申请日：1999-07-29

申请人： Shigeru Noguchi ,  Masaru Matsuura ,  Yoshiro Yamanaka ,  Jun Sasaki ,  Tomoko Takeuchi

发明人： Shigeru Noguchi ,  Masaru Matsuura ,  Yoshiro Yamanaka ,  Jun Sasaki ,  Tomoko Takeuchi

IPC分类号： A23L120

CPC分类号： A23C20/025

摘要： A method for producing tofu is described which includes the step of detecting the concentration of a coagulant in soybean milk. The coagulant concentration is detected by a coagulant concentration detector disposed downstream of a stirring apparatus in a soybean milk transfer circuit. The amount of addition of the coagulant is controlled by a coagulant concentration adjuster in accordance with the coagulant concentration detected by the coagulant concentration detector. This enables the mass production of tofu having a bouncy taste and excellent flavor.

摘要翻译： 描述了一种生产豆腐的方法，其包括检测豆浆中的凝结剂的浓度的步骤。 凝结剂浓度由设置在豆浆输送回路中的搅拌装置下游的凝结剂浓度检测器检测。 根据凝固剂浓度检测器检测出的凝结剂浓度，凝结剂浓度调节剂控制凝结剂的添加量。 这样可以大量生产具有弹性味道和优良风味的豆腐。