知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

41 条记录 (耗时 0.018 秒)

    CYCLOHEXANECARBOXYLIC ACID COMPOUND
    1.
    发明申请
    CYCLOHEXANECARBOXYLIC ACID COMPOUND 失效
    环己基羧酸化合物

    公开(公告)号：US20100022783A1

    公开(公告)日：2010-01-28

    申请号：US12574907

    申请日：2009-10-07

    申请人： Makoto ONO ,  Shigeru Noguchi

    发明人： Makoto ONO ,  Shigeru Noguchi

    IPC分类号： C07D403/12

    CPC分类号： C07D403/12

    摘要： The present invention provides a VLA-4 inhibitor having high water-solubility and excellent long-term stability; i.e., sodium trans-4-[1-[2,5-dichloro-4-[(1-methyl-1H-3-indolylcarbonyl)amino]phenylacetyl]-(4S)-methoxy-(2S)-pyrrolidinylmethoxy]cyclohexanecarboxylate pentahydrate.

    摘要翻译： 本发明提供了具有高水溶性和优异的长期稳定性的VLA-4抑制剂; 即反式-4- [1- [2,5-二氯-4 - [（1-甲基-1H-吲哚基羰基）氨基]苯基乙酰基] - （4S） - 甲氧基 - （2S） - 吡咯烷基甲氧基]环己烷羧酸酯五水合物 。

    Cyclohexanecarboxylic acid compound
    2.
    发明申请
    Cyclohexanecarboxylic acid compound 失效
    环己烷羧酸化合物

    公开(公告)号：US20070105936A1

    公开(公告)日：2007-05-10

    申请号：US10562122

    申请日：2004-07-23

    申请人： Makoto Ono ,  Shigeru Noguchi

    发明人： Makoto Ono ,  Shigeru Noguchi

    IPC分类号： A61K31/405 ,  C07D403/02

    CPC分类号： C07D403/12

    摘要： The present invention provides a VLA-4 inhibitor having high water-solubility and excellent long-term stability; i.e., sodium trans-4-[1-[2,5-dichloro-4-[(1-methyl-1H-3-indolylcarbonyl)amino]phenylacetyl]-(4S)-methoxy-(2S)-pyrrolidinylmethoxy]cyclohexanecarboxylate pentahydrate.

    摘要翻译： 本发明提供了具有高水溶性和优异的长期稳定性的VLA-4抑制剂; 即反式-4- [1- [2,5-二氯-4 - [（1-甲基-1H-吲哚基羰基）氨基]苯基乙酰基] - （4S） - 甲氧基 - （2S） - 吡咯烷基甲氧基]环己烷羧酸酯五水合物 。

    Process for the preparation of tetrahydro-indolizines
    3.
    发明授权
    Process for the preparation of tetrahydro-indolizines 失效
    四氢中氮茚的制备方法

    公开(公告)号：US06172230B2

    公开(公告)日：2001-01-09

    申请号：US09147183

    申请日：1998-10-26

    申请人： Shinji Kamihara ,  Kazuaki Kanai ,  Shigeru Noguchi

    发明人： Shinji Kamihara ,  Kazuaki Kanai ,  Shigeru Noguchi

    IPC分类号： C07D21500

    CPC分类号： C07D471/04

    摘要： Described is a process for the preparation of Compound (7) in accordance with the following reaction scheme by reacting Compound (5) with ethylene glycol in a solvent in the presence of a Lewis acid, thereby obtaining Compound (6), and then reacting the resulting compound with a carbonate diester in a solvent in the presence of a metal alkoxide (R1, R6 each represents a C1-6 alkyl group or the like and R5 represents H or C1-5 alkyl group). Compound (7) so obtained is useful as an intermediate for camptothecins useful as antitumor agents.

    摘要翻译： 描述根据以下反应方案通过使化合物（5）与乙二醇在溶剂中在路易斯酸存在下反应制备化合物（7）的方法，从而得到化合物（6），然后使 在金属醇盐（R1，R6各自表示C1-6烷基等，R5表示H或C1-5烷基）的溶剂中，将碳酸二酯与碳酸二酯反应，得到的化合物（7）为 作为可用作抗肿瘤剂的喜树碱的中间体。

    Photovoltaic device
    5.
    发明授权
    Photovoltaic device 失效
    光伏装置

    公开(公告)号：US5705828A

    公开(公告)日：1998-01-06

    申请号：US544956

    申请日：1996-02-20

    申请人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

    发明人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

    IPC分类号： H01L31/0725 ,  H01L31/0747 ,  H01L31/20 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376

    CPC分类号： H01L31/0725 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： The disclosure relates to a photovoltaic device comprising a transparent electrode, one conductive type amorphous semiconductor, another conductive type crystal semiconductor, an intrinsic amorphous semiconductor, another conductive type amorphous semiconductor and a metal electrode and having a first semiconductor junction composed of the one conductive type amorphous semiconductor and the another conductive type crystal semiconductor, and a second semiconductor junction composed of the another type crystal semiconductor and the another conductive type amorphous semiconductor, wherein the transparent electrode is located on light incident side of the one conductive type amorphous semiconductor, the metal electrode is located on another side, the intrinsic amorphous semiconductor is located between the another conductive type crystal semiconductor and the another conductive type amorphous semiconductor, the first semiconductor junction is located on the light incident side, and the second semiconductor junction is located on the another side. In the device, the crystal semiconductor is composed single-crystalline semiconductor or polycrystalline semiconductor.

    摘要翻译： 本发明涉及一种光电器件，其包括透明电极，一个导电型非晶半导体，另一导电型晶体半导体，本征非晶半导体，另一导电型非晶半导体和金属电极，并具有由一个导电型 非晶半导体和另一导电型晶体半导体，以及由另一种类型的晶体半导体和另一种导电型非晶半导体构成的第二半导体结，其中透明电极位于一个导电型非晶半导体的光入射侧，金属 电极位于另一侧，本征非晶半导体位于另一导电型晶体半导体与另一导电型非晶半导体之间，第一半导体结位于光入射侧，而秒 ond半导体结位于另一侧。 在该器件中，晶体半导体是单晶半导体或多晶半导体。

    Photovoltaic device and manufacturing method therefor
    7.
    发明授权
    Photovoltaic device and manufacturing method therefor 失效
    光伏器件及其制造方法

    公开(公告)号：US5419783A

    公开(公告)日：1995-05-30

    申请号：US036455

    申请日：1993-03-24

    申请人： Shigeru Noguchi ,  Keiichi Sano ,  Hiroshi Iwata

    发明人： Shigeru Noguchi ,  Keiichi Sano ,  Hiroshi Iwata

    IPC分类号： H01L31/052 ,  H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/075 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic device has a transparent substrate, a transparent electrode layer, a photovoltaic layer, and a back electrode which are stacked in this order. The photovoltaic layer has a p-type a-SiC layer provided on the transparent electrode layer, a buffer layer provided on the p-type a-SiC layer, a photosensitive layer provided on the buffer layer, and an n-type semiconductor layer provided on the photosensitive layer. The buffer layer is an a-SiC layer first deposited on the p-type a-SiC layer and then subjected to a plasma treatment. The plasma treatment should be carried out using a gas selected from a group consisting of hydrogen (H.sub.2), Argon (Ar), Helium (He), Neon (Ne), Krypton (Kr), and Xenon (Xe). In the device, the buffer layer may be composed of a microcrystalline SiC layer or an amorphous SiC layer. The buffer layer may have a thickness ranging from about 10 .ANG. to about 100 .ANG., and may be formed by a plasma-CVD process.

    摘要翻译： 光电器件具有依次层叠的透明基板，透明电极层，光电转换层和背面电极。 光电层具有设置在透明电极层上的p型a-SiC层，设置在p型a-SiC层上的缓冲层，设置在缓冲层上的感光层和设置在缓冲层上的n型半导体层 在感光层上。 缓冲层是首先沉积在p型a-SiC层上的a-SiC层，然后进行等离子体处理。 等离子体处理应使用选自氢（H2），氩（Ar），氦（He），氖（Ne），氪（Kr）和氙（Xe）的气体进行。 在该器件中，缓冲层可以由微晶SiC层或非晶SiC层构成。 缓冲层可以具有从大约10安培到大约100埃的厚度，并且可以通过等离子体CVD法形成。

    Photovoltaic apparatus
    8.
    发明授权
    Photovoltaic apparatus 失效
    光伏设备

    公开(公告)号：US5236516A

    公开(公告)日：1993-08-17

    申请号：US762850

    申请日：1991-09-18

    申请人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

    发明人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

    IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/052 ,  H01L31/075

    CPC分类号： H01L31/075 ,  H01L31/046 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

    摘要： A photovoltaic apparatus for directly converting light energy into electric energy, comprising a light shielding substrate, at least one surface of the light shielding substrate being a metal; a light transmitting insulating layer on the above surface; and a photovoltaic body on a surface of the insulating layer, the photovoltaic body including a light transmitting first electrode, an amorphous or microcrystal semiconductive layer, and a light transmitting second electrode laminated in this order, with the first electrode being in contact with the insulating layer.

    摘要翻译： 一种用于将光能直接转换为电能的光伏装置，包括遮光基板，所述遮光基板的至少一个表面是金属; 上述表面上的透光绝缘层; 以及在所述绝缘层的表面上的光电体，所述光电体包括透光性第一电极，非晶或微晶半导体层和依次层叠的透光性第二电极，所述第一电极与所述绝缘体 层。

    Thin film transistor
    9.
    发明授权
    Thin film transistor 失效
    薄膜晶体管

    公开(公告)号：US5231297A

    公开(公告)日：1993-07-27

    申请号：US818745

    申请日：1992-01-07

    申请人： Shoichiro Nakayama ,  Shigeru Noguchi ,  Keiichi Sano ,  Hiroshi Iwata ,  Hiroyuki Kuriyama

    发明人： Shoichiro Nakayama ,  Shigeru Noguchi ,  Keiichi Sano ,  Hiroshi Iwata ,  Hiroyuki Kuriyama

    IPC分类号： H01L21/336 ,  H01L29/786

    CPC分类号： H01L29/66757 ,  H01L29/78618

    摘要： A thin film transistor with a noncrystalline semiconductor film, wherein an amorphous semiconductor in a position corresponding to a channel between a source electrode and a drain electrode is polycrystallized, while on both side areas or around the polycrystallized area remains amorphous. The thin film transistor may be a noncrystalline semiconductor film with a heterojunction between a channel area and a source and drain area.

    摘要翻译： 一种具有非晶半导体膜的薄膜晶体管，其中对应于源电极和漏电极之间的沟道的位置的非晶半导体是多结晶的，而在所述多结晶区域的两个侧面区域或其周围仍保持无定形。 薄膜晶体管可以是在沟道区域和源极和漏极区域之间具有异质结的非晶半导体膜。

    Photovoltaic cell and method of manufacturing polycrystalline semiconductive film
    10.
    发明授权
    Photovoltaic cell and method of manufacturing polycrystalline semiconductive film 失效
    光电池和制造多晶半导体膜的方法

    公开(公告)号：US5221365A

    公开(公告)日：1993-06-22

    申请号：US781486

    申请日：1991-10-18

    申请人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

    发明人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

    IPC分类号： H01L31/0236 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/20

    CPC分类号： H01L31/03682 ,  H01L31/0236 ,  H01L31/186 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S148/09 ,  Y10S148/122 ,  Y10S148/153 ,  Y10S438/964

    摘要： A thin film transistor and a photovoltaic cell wherein a polycrystalline semiconductive film, having a large grain size and high carrier mobility obtained by heat treatment of a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like on a substrate with a textured surface, is used as a channel layer or a photo-activation layer, the textured surface being formed by etching one surface of the substrate or forming a textured thin film on the substrate.A method of manufacturing a polycrystalline semiconductive film, wherein a surface of a substrate is etched or a textured thin film is formed on the substrate to form a textured surface, and a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like is formed on the textured surface, and the semiconductive film is polycrystallized by heat treatment.

    摘要翻译： 一种薄膜晶体管和光伏电池，其中通过在基板上热处理多晶半导体膜，非晶半导体膜，微晶半导体膜等而获得具有大晶粒尺寸和高载流子迁移率的多晶半导体膜， 纹理表面用作沟道层或光致活化层，纹理表面通过蚀刻衬底的一个表面或在衬底上形成纹理化的薄膜而形成。 一种制造多晶半导体膜的方法，其中蚀刻衬底的表面或在衬底上形成织构化薄膜以形成织构表面，以及多晶半导体膜，非晶半导体膜，微晶半导体膜或 形成在纹理表面上，并且半导体膜通过热处理多晶化。