Abstract:
A light-emitting device (LED) package component includes an LED chip having a first active bond pad and a second active bond pad. A carrier chip is bonded onto the LED chip through flip-chip bonding. The carrier chip includes a first active through-substrate via (TSV) and a second active TSV connected to the first and the second active bond pads, respectively. The carrier chip further includes a dummy TSV therein, which is electrically coupled to the first active bond pad, and is configured not to conduct any current when a current flows through the LED chip.
Abstract:
A phosphor-contained solar cell comprises a photoelectric conversion layer for conversing the photo energy to electrical energy; a phosphor layer, disposed on at least one side of the photoelectric conversion layer, for improving the photoelectric conversion efficiency; the phosphor is up conversion phosphor or down conversion phosphor; wherein the up conversion phosphor is selected from X2Mo2O9:X or X2Mo2O9:X,X; the down-conversion phosphor is selected from JQX(PO4)2:X3+ or JQX(PO4)2:X2+,X2+; wherein X represents anyone of rare earth metal, J represents lithium, sodium or potassium, Q represents anyone of alkaline earth metal.
Abstract:
An optical emitter is fabricated by bonding a Light-Emitting Diode (LED) die to a package wafer, electrically connecting the LED die and the package wafer, forming a phosphor coating over the LED die on the package wafer, molding a lens over the LED die on the package wafer, molding a reflector on the package wafer, and dicing the wafer into at least one optical emitter.
Abstract:
A structure of lighting device includes g a hood, a heat dissipater, at least one substrate board, and a fastener. The hood forms a receiving space, at least one fitting slot, and at least one heat dissipation opening. The fitting slot is located inside the receiving space. The heat dissipation opening is defined in a circumferential surface of the hood. The heat dissipater is received in the receiving space. The heat dissipater forms at least one guide section. The guide section opposes the fitting slot and is received in the fitting slot. The substrate board is electrically connected to at least one light-emitting diode. The substrate board is coupled to the heat dissipater. The heat dissipation opening allows for air circulation for removing heat generated by light-emitting diodes. Further, the heat dissipation opening is formed to have a width W less than 3mm, and the heat dissipater is arranged to be spaced from a circumferential surface of the hood by a distance greater than 6mm.
Abstract:
A controlling method and a controlling system for saving energy of a building are provided. In the present method, a user environment requirement is obtained first. Then, a plurality of cover ratios of a sunshade device on an opening of a building is defined, and according to an environment parameter and the user environment requirement, a total electricity consumption required by air conditioning equipment and by lighting equipment in the building corresponding to each of the cover ratios is calculated. Finally, a cover ratio that produces the minimum total electricity consumption is obtained, and the sunshade device, the air conditioning equipment and the lighting equipment are adjusted according to the obtained cover ratio, so as to make the building meet the user environment requirement and maintain a status of the minimum total energy consumption.
Abstract:
A matrix form semiconductor package substrate that has an electrode situated in-between a plurality of IC package substrates for providing electrical communication to conductive pads on the substrate is provided. The matrix form semiconductor package substrate includes a plurality of IC package substrates that are integrally formed on a strip in a matrix pattern that has a boundary between each two of the plurality of IC package substrates. Each of the plurality of IC package substrates has a multiplicity of conductive pad traces and an electrode, or a plating bar, formed in a serpentine configuration along the boundary for providing electrical communication to the multiplicity of conductive pads.
Abstract:
A method for fabricating a semiconductor package is provided. In one embodiment, a semiconductor chip having a plurality of exposed conductive layers thereon is provided. A first substrate having a first surface and a second surface is provided, the first surface having a plurality of exposed via plugs thereunder. The semiconductor chip is bonded to the first substrate, wherein the plurality of exposed conductor layers are aligned and in contact with the surfaces of the exposed via plugs. A portion of the second surface of the first substrate is then removed to expose the opposite ends of the plurality of via plugs. A plurality of UBM layers is formed on the surfaces of the opposite ends of the plurality of via plugs. A plurality of solder bumps is formed and mounted on the UBM layers. A second substrate having a first surface and a second surface is provided, the solder bumps being mounted to the first surface of the second substrate. A plurality of solder balls is formed and mounted to the second surface of the second substrate. A third substrate is mounted to the solder balls.
Abstract:
A semiconductor package assembly comprises a first conductive pad on a semiconductor substrate; a second conductive pad on a package substrate; a bump physically coupled between the first conductive pad and the second conductive pad, wherein the bump is substantially lead-free or high-lead-containing; the bump has a first interface with the first conductive pad, the first interface having a first linear dimension; the bump has a second interface with the second conductive pad, the second interface having a second linear dimension; and wherein the ratio of the first linear dimension and the second linear dimension is between about 0.7 and about 1.7.
Abstract:
A microelectronic assembly, and method of making the same, including a wire stitch bonded on an electroplated gold bump or electroless nickel/gold bump on a bond pad of an integrated circuit chip. The electroplated gold bump or electroless nickel/gold bump provides a relatively flat upper surface which is excellent for making a wire stitch bond thereto. The microelectronic assembly may include a multiple integrated circuit chip stack attached to a substrate such as a ball grid array. The electroplated gold bumps or electroless nickel/gold bumps may be formed on all of the integrated circuit chips and wire stitch bonds formed on the electroplated gold bumps or electroless nickel/gold bumps thereby connecting the integrated circuit chips to each other or to an underlying ball grid array.
Abstract:
A device includes a package component, and a die over and bonded to the package component. The die includes a substrate. A heat sink is disposed over and bonded to a back surface of the substrate through direct bonding.