CHARGED PARTICLE BEAM DRAWING APPARATUS, DRAWING DATA GENERATION METHOD, DRAWING DATA GENERATION PROGRAM STORAGE MEDIUM, AND ARTICLE MANUFACTURING METHOD
    143.
    发明申请
    CHARGED PARTICLE BEAM DRAWING APPARATUS, DRAWING DATA GENERATION METHOD, DRAWING DATA GENERATION PROGRAM STORAGE MEDIUM, AND ARTICLE MANUFACTURING METHOD 审中-公开
    充电颗粒光束绘图设备,绘图数据生成方法,绘图数据生成程序存储介质和制品制造方法

    公开(公告)号:US20130078577A1

    公开(公告)日:2013-03-28

    申请号:US13629994

    申请日:2012-09-28

    Inventor: Toru Yamazaki

    Abstract: A drawing apparatus of the present invention is an apparatus that performs drawing on a substrate with a plurality of charged particle beams and includes a blanking deflector array including a plurality of blanking deflectors configured to respectively blank the plurality of charged particle beams; and a controller configured to control the blanking deflector array based on drawing data. The controller is configured to control the blanking deflector array such that a position error of the plurality of charged particle beams on the substrate due to a magnetic field generated by the blanking deflector array is less than that in a case where the controller controls the blanking deflector array in accordance with initial drawing data.

    Abstract translation: 本发明的绘图装置是一种利用多个带电粒子束在衬底上进行绘图的装置,并且包括一个消隐偏转器阵列,该消隐偏转器阵列包括多个消隐偏转器,其构造成分别对多个带电粒子束进行空白; 以及控制器,被配置为基于绘图数据来控制消隐偏转器阵列。 控制器被配置为控制消隐偏转器阵列,使得由于消隐偏转器阵列产生的磁场而导致的衬底上的多个带电粒子束的位置误差小于控制器控制消隐偏转器的情况 阵列按照初始绘图数据。

    ELECTROLYTIC PLATING METHOD AND ELECTROSTATIC DEFLECTING DEVICE
    144.
    发明申请
    ELECTROLYTIC PLATING METHOD AND ELECTROSTATIC DEFLECTING DEVICE 审中-公开
    电镀法和静电偏转装置

    公开(公告)号:US20130026386A1

    公开(公告)日:2013-01-31

    申请号:US13486196

    申请日:2012-06-01

    Inventor: Kazushige Utsumi

    CPC classification number: C25D5/022 C25D3/38 C25D5/02 H01J37/045 H01J2237/0435

    Abstract: Disclosed is an electrolytic plating method which includes forming plating films 5 and 6 having predetermined thicknesses in a plurality of regions 14 and 15 on a substrate 1. The electrolytic plating method includes arranging a resistive element 4 having ohmic characteristics in at least one of paths through which electrolytic plating currents flow into the plurality of the regions 14 and 15 on the substrate 1, respectively, and simultaneously growing the plating films 5 and 6 in the plurality of the regions 14 and 15 by electrolytic plating. The electrolytic plating method can form the plating films having different or same thicknesses in the plurality of the regions on the substrate.

    Abstract translation: 公开了一种电解电镀方法,其包括在基板1上的多个区域14和15中形成具有预定厚度的镀膜5和6.电解镀覆方法包括在至少一个通路中布置具有欧姆特性的电阻元件4 哪个电解电镀电流分别流入基板1上的多个区域14和15,同时通过电解电镀在多个区域14和15中生长镀膜5和6。 电解电镀法可以在基板上的多个区域中形成具有不同或相同厚度的镀膜。

    Apparatus and method for generating femtosecond electron beam
    146.
    发明授权
    Apparatus and method for generating femtosecond electron beam 有权
    用于产生飞秒电子束的装置和方法

    公开(公告)号:US08278813B2

    公开(公告)日:2012-10-02

    申请号:US12481995

    申请日:2009-06-10

    Abstract: An apparatus and method for generating femtosecond electron beam are disclosed. The apparatus for generating electron beam by discharging an electron generated via a cathode to an anode includes a transmission window provided at one side of the cathode to allow incident laser to pass therethrough, a pinhole formed on the anode such that the pinhole corresponds to the position of the electron generated from the transmission window, and a focusing unit provided at one side of the cathode and generating an electric field to accelerate and at the same time concentrate the electron to the pinhole. Electrons are simultaneously concentrated and accelerated to the pinhole by an electric field generated by the focusing unit positioned at the cathode to generate femtosecond electron beam.

    Abstract translation: 公开了一种用于产生飞秒电子束的装置和方法。 通过将通过阴极发射的电子放电到阳极来产生电子束的装置包括设置在阴极的一侧以允许入射激光通过的透射窗口,形成在阳极上的针孔,使得针孔对应于位置 的发射窗产生的电子,以及设置在阴极一侧的聚焦单元,产生电场以加速并同时将电子集中到针孔。 通过由位于阴极处的聚焦单元产生的电场,电子同时集中并加速到针孔,以产生飞秒电子束。

    Beamlet blanker arrangement
    147.
    发明授权
    Beamlet blanker arrangement 有权
    Beamlet消除器布置

    公开(公告)号:US08258484B2

    公开(公告)日:2012-09-04

    申请号:US12905131

    申请日:2010-10-15

    Abstract: The invention relates to a charged particle multi-beamlet lithography system for exposing a target using a plurality of beamlets. The system has a beam generator, a beamlet blanker, and a beamlet projector. The beam generator is configured to generate a plurality of charged particle beamlets. The beamlet blanker is configured to pattern the beamlets. The beamlet projector is configured to project the patterned beamlets onto the target surface. The system further has a deflection device. The deflection device has a plurality of memory cells. Each memory cell is provided with a storage element and is connected to a switching electrode of a deflector.

    Abstract translation: 本发明涉及一种用于使用多个子束曝光靶的带电粒子多子束光刻系统。 该系统具有光束发生器,子束遮挡器和小射束投影仪。 束发生器被配置为产生多个带电粒子子束。 子束消除器被配置为对子束进行图案化。 子束投影仪被配置为将图案化的子束投影到目标表面上。 该系统还具有偏转装置。 偏转装置具有多个存储单元。 每个存储单元设置有存储元件,并连接到偏转器的开关电极。

    Method for producing a multi-beam deflector array device having electrodes
    149.
    发明授权
    Method for producing a multi-beam deflector array device having electrodes 有权
    用于制造具有电极的多光束偏转器阵列器件的方法

    公开(公告)号:US08198601B2

    公开(公告)日:2012-06-12

    申请号:US12692679

    申请日:2010-01-25

    CPC classification number: H01J37/045 H01J37/09 H01J37/3026 H01J2237/0437

    Abstract: The disclosure relates to a method for producing a multi-beam deflector array device with a plurality of openings for use in a particle-beam exposure apparatus, in particular a projection lithography system, said method starting from a CMOS wafer and comprising the steps of generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; passivating the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, said opening stretching across abovementioned area so that the columns are arranged opposite of each other on the sidewalls of the opening.

    Abstract translation: 本发明涉及一种用于生产具有多个开口的多光束偏转器阵列器件的方法,所述多光束偏转器阵列器件用于粒子束曝光设备,特别是投影光刻系统,所述方法从CMOS晶片开始,并且包括以下步骤: 至少一对平行的沟槽在晶片坯料的第一侧上,在下面的电路层不起作用的区域的边缘处,沟槽到达散装材料层; 钝化沟槽的侧壁和底部; 将导电填充材料沉积到沟槽中,从而产生用作电极的填充材料柱; 将金属接触装置附接到电极的顶部; 构造电极之间的开口,所述开口延伸穿过上述区域,使得列在开口的侧壁上彼此相对布置。

    SHUTTER DEVICE AND VACUUM PROCESSING APPARATUS
    150.
    发明申请
    SHUTTER DEVICE AND VACUUM PROCESSING APPARATUS 审中-公开
    快门装置和真空加工装置

    公开(公告)号:US20110198033A1

    公开(公告)日:2011-08-18

    申请号:US13027974

    申请日:2011-02-15

    Abstract: A shutter device having two shutter plates, which shield between an IBS and a substrate, is configured such that the two shutter plates are disposed at symmetrical positions across the IBS and can perform an opening/closing operation in synchronization with a rotation of a rotation-link-member which is rotatably disposed surrounding the IBS. With the configuration, the shutter device can reduce an offset of a shield range in the opening/closing operation.

    Abstract translation: 具有在IBS和基板之间屏蔽的两个快门板的快门装置被构造成使得两个快门板被布置在跨越IBS的对称位置处,并且可以与旋转轴线旋转同步地执行打开/关闭操作, 连接构件,其围绕IBS可旋转地设置。 利用该构造,快门装置可以减少打开/关闭操作中的屏蔽范围的偏移。

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