公开(公告)号：US09536697B2

公开(公告)日：2017-01-03

申请号：US14716385

申请日：2015-05-19

Applicant: Hermes Microvision Inc.

Inventor： Yi-Xiang Wang ,  Jian Zhang ,  Yan Zhao

IPC: G01N23/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/026 ,  H01J37/244 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/024

Abstract: This invention provides a system and a method for calibrating charge-regulation module in vacuum environment. Means for mounting the charge-regulation module provides motions to the charge-regulation module such that a beam spot, illuminated by the charge-regulation module, on a sample surface can be moved to a pre-determined position which is irradiated by a charged particle beam.

Abstract translation: 本发明提供一种用于在真空环境中校准电荷调节模块的系统和方法。 用于安装充电调节模块的装置向充电调节模块提供运动，使得由样品表面上的充电调节模块照亮的束斑可以移动到由充电微粒照射的预定位置 光束。

公开(公告)号：US20160343534A1

公开(公告)日：2016-11-24

申请号：US14716385

申请日：2015-05-19

Applicant: Hermes Microvision Inc.

Inventor： Yi-Xiang Wang ,  Jian Zhang ,  Yan Zhao

IPC: H01J37/02 ,  H01J37/26 ,  H01J37/244

CPC classification number: H01J37/026 ,  H01J37/244 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/024

Abstract: This invention provides a system and a method for calibrating charge-regulation module in vacuum environment. Means for mounting the charge-regulation module provides motions to the charge-regulation module such that a beam spot, illuminated by the charge-regulation module, on a sample surface can be moved to a pre-determined position which is irradiated by a charged particle beam.

Abstract translation: 本发明提供一种用于在真空环境中校准电荷调节模块的系统和方法。 用于安装充电调节模块的装置向充电调节模块提供运动，使得由样品表面上的充电调节模块照亮的束斑可以移动到由充电微粒照射的预定位置 光束。

公开(公告)号：US20160233048A1

公开(公告)日：2016-08-11

申请号：US14615602

申请日：2015-02-06

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang ,  Kristen S. Rounds ,  William Leavitt ,  Michael St. Peter

IPC: H01J37/08 ,  H01J37/10 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/04924

Abstract: An apparatus to control an ion beam for treating a substrate. The apparatus may include a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam, a ground electrode assembly disposed downstream of the fixed electrode. The ground electrode assembly may include a base and a ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position.

Abstract translation: 控制用于处理基板的离子束的装置。 该装置可以包括固定电极，其被配置为使离子束通过固定电极孔并且将固定电极电位施加到离子束，设置在固定电极下游的接地电极组件。 接地电极组件可以包括基部和邻近固定电极设置的接地电极，并且被配置为使离子束通过接地电极孔，接地电极可相对于固定电极的第一轴线在第一位置 以及第二位置，其中当所述接地电极在所述第一位置和所述第二位置之间移动时，所述衬底处的离子束的束电流变化。

公开(公告)号：US09288889B2

公开(公告)日：2016-03-15

申请号：US13798829

申请日：2013-03-13

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Svetlana B. Radovanov ,  Bon-Woong Koo ,  Peter F. Kurunczi ,  Ludovic Godet

IPC: H05H3/02 ,  H01J37/32 ,  H01J37/317

CPC classification number: H05H3/02 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/0041 ,  H01J2237/024

Abstract: A processing system includes a plasma source chamber to generate a plasma; an extraction assembly adjacent the plasma source chamber having an extraction plate and a beam modifier, the extraction plate defining an extraction plate plane and an aperture to extract ions from the plasma source chamber into an ion beam, the beam modifier adjacent to the extraction plate and operative to adjust an ion beam trajectory angle of the ion beam with respect to a perpendicular to the extraction plate plane; and a neutralizer to receive the ion beam extracted by the extraction assembly, convert the ion beam to a neutral beam and direct the neutral beam towards a substrate, the neutralizer having one or more neutralizer plates arranged at a neutralizer plate angle, the extraction assembly and the neutralizer interoperative to provide an ion beam incident angle of the ion beam with respect to the neutralizer plates.

Abstract translation: 一种处理系统包括：产生等离子体的等离子体源室; 邻近等离子体源室的提取组件具有提取板和光束调节器，提取板限定提取板平面和将离子从等离子体源室提取为离子束的孔，与提取板相邻的光束修改器和 可操作地调整离子束相对于提取板平面垂直的离子束轨迹角; 以及中和器，用于接收由提取组件提取的离子束，将离子束转换成中性光束并将中性光束引向衬底，中和器具有以中和板角度排列的一个或多个中和板，提取组件和 中和器相互作用以提供离子束相对于中和板的离子束入射角。

公开(公告)号：US20150076364A1

公开(公告)日：2015-03-19

申请号：US14540220

申请日：2014-11-13

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE PARIS SUD 11

Inventor： Mathieu Kociak ,  Luiz Fernando Zagonel ,  Marcel Tence ,  Stefano Mazzucco

IPC: G01N23/225 ,  H01J37/26

CPC classification number: G01N23/2254 ,  G01N2201/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/063 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2602 ,  H01J2237/2802 ,  H01J2237/2808

Abstract: A cathodoluminescence detection system is provided, including a source of charged particles arranged to illuminate a sample with a charged particle beam, and an optical path having at least two optical components capable of collecting and conveying light radiation coming from the illuminated sample to an analysis device; each optical component of the optical path is selected so that: the maximum output angle of the optical component is less than or equal to 120% of the maximum acceptance angle of the next optical component; and the diameter of the radiation coming from the optical component in the input plane of the next optical component is less than or equal to 120% of the useful input diameter of the next optical component.

Abstract translation: 提供了一种阴极发光检测系统，其包括用带电粒子束照射样品的带电粒子源，以及具有至少两个光学部件的光路，所述至少两个光学部件能够将来自被照射样品的光辐射收集并传送到分析装置 ; 选择光路的每个光学部件，使得：光学部件的最大输出角度小于或等于下一个光学部件的最大接收角度的120％; 并且来自下一个光学部件的输入平面中的光学部件的辐射的直径小于或等于下一个光学部件的有用输入直径的120％。

公开(公告)号：US08912509B2

公开(公告)日：2014-12-16

申请号：US13699981

申请日：2011-04-29

Applicant: Mathieu Kociak ,  Luiz Fernando Zagonel ,  Marcel Tence ,  Stefano Mazzucco

Inventor： Mathieu Kociak ,  Luiz Fernando Zagonel ,  Marcel Tence ,  Stefano Mazzucco

IPC: G01N21/64 ,  G01N23/225 ,  H01J37/244 ,  H01J37/22 ,  H01J37/28

CPC classification number: G01N23/2254 ,  G01N2201/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/063 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2602 ,  H01J2237/2802 ,  H01J2237/2808

Abstract: A cathodoluminescence detection system is provided, including a collection optic collecting light radiation coming from a sample illuminated by a charged particle beam and sending the light radiation to an analyzer, a positioner for the collection optic; the positioner including several translation components of the collection optic. Each translation component effects the translation of the collection optic in one dimension of space so that the translation components effect the translation of the collection optic in several dimensions of space.

Abstract translation: 提供了阴极发光检测系统，其包括收集来自由带电粒子束照射的样品的光辐射并将光辐射发送到分析器的收集光学器件，用于收集光学器件的定位器; 定位器包括收集光学元件的几个翻译部件。 每个翻译组件在一个维度的空间中影响收集光学器件的平移，使得翻译组件在几个维度的空间中影响收集光学器件的平移。

公开(公告)号：US08525123B2

公开(公告)日：2013-09-03

申请号：US12013799

申请日：2008-01-14

Applicant: Christos D. Dimitrakopoulos ,  Kam L. Lee ,  Robert L. Wisnieff

Inventor： Christos D. Dimitrakopoulos ,  Kam L. Lee ,  Robert L. Wisnieff

IPC: H01J37/304

CPC classification number: H01L21/76825 ,  B29C71/04 ,  B29C2035/0877 ,  H01J37/026 ,  H01J37/317 ,  H01J2237/0044 ,  H01J2237/024 ,  H01J2237/047 ,  H01J2237/3156 ,  H01L21/3105 ,  H01L21/76835

Abstract: An ultra low-k dielectric material layer is formed on a semiconductor substrate. In one embodiment, a grid of wires is placed at a distance above a top surface of the ultra low-k dielectric material layer and is electrically biased such that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. In another embodiment, a polymeric conductive layer is formed directly on the ultra low-k dielectric material layer and is electrically biased so that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. By maintaining the total electron emission coefficient at 1.0, charging of the substrate is avoided, thus protecting any device on the substrate from any adverse changes in electrical characteristics.

Abstract translation: 在半导体基板上形成超低k电介质材料层。 在一个实施例中，电线格栅放置在超低k电介质材料层的顶表面上方的距离处，并被电偏置，使得在电子束固化中使用的电子的能量下，总电子发射系数为1.0 超低k电介质材料层。 在另一个实施例中，聚合物导电层直接形成在超低k电介质材料层上并被电偏置，使得在超低k电介质的电子束固化中使用的电子能量下，总电子发射系数变为1.0 材料层。 通过将总电子发射系数保持在1.0，避免了衬底的充电，从而保护衬底上的任何器件免受电特性的任何不利变化。

公开(公告)号：US08476589B2

公开(公告)日：2013-07-02

申请号：US13539291

申请日：2012-06-29

Applicant: Gerd Benner ,  Stefan Meyer ,  Steffen Niederberger ,  Dirk Preikszas

Inventor： Gerd Benner ,  Stefan Meyer ,  Steffen Niederberger ,  Dirk Preikszas

IPC: H01J37/244

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/028 ,  H01J2237/2445 ,  H01J2237/24495 ,  H01J2237/2802

Abstract: A particle beam microscope comprises a magnetic lens 3 having an optical axis 53 and a pole piece 21. An object 5 to be examined is mounted at a point of intersection 51 between an optical axis 53 and the object plane 19. First and second X-ray detectors 33 have first and second radiation-sensitive substrates 35 arranged such that a first elevation angle β1 between a first straight line 551 extending through the point of intersection 51 and a center of the first substrate 351 and the object plane 19 differs from a second elevation angle β2 between a second straight line 552 extending through the point of intersection 51 and a center of the second substrate 352 and the object plane 19 by more than 14°.

Abstract translation: 粒子束显微镜包括具有光轴53和极片21的磁透镜3.被检查物5安装在光轴53与物面19之间的交点51处。第一和第二X射线 射线检测器33具有第一和第二辐射敏感基板35，其布置成使得延伸穿过交点51的第一直线551与第一基板351的中心与物平面19之间的第一仰角β1与第二 延伸穿过交点51的第二直线552与第二基板352的中心和物平面19之间的仰角β2超过14°。

公开(公告)号：US20130140459A1

公开(公告)日：2013-06-06

申请号：US13309425

申请日：2011-12-01

Applicant: Simon Galloway

Inventor： Simon Galloway

IPC: H01J37/26

CPC classification number: G01N1/06 ,  G01N2001/068 ,  H01J37/02 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/206 ,  H01J2237/208 ,  H01J2237/2445 ,  H01J2237/2611 ,  H01J2237/2808 ,  H01J2237/31749

Abstract: A system is disclosed for obtaining layered cathodoluminescence images of a sample wherein the light collecting equipment is highly efficient and wherein the microtoming or Focused Ion Beam equipment does not interfere with the efficiency of the light collecting equipment and wherein the position of the sample with respect to the light collecting equipment is not disturbed in the microtoming or ion beam milling process. Embodiments are disclosed allowing simultaneous collection of cathodoluminescence images and collection of other electron based imaging signals such as backscattered and secondary electrons.

Abstract translation: 公开了一种用于获得样品的层状阴极发光图像的系统，其中所述光收集设备是高效的，并且其中所述切片或聚焦离子束设备不干扰所述光收集设备的效率，并且其中所述样品相对于 在切片或离子束研磨过程中，光收集设备不受干扰。 公开了实施例，允许阴离子发光图像的同时收集和其他基于电子的成像信号（例如背散射和二次电子）的收集。

公开(公告)号：US20120273679A1

公开(公告)日：2012-11-01

申请号：US13511941

申请日：2009-12-07

Applicant: Angus Bewick ,  Santokh Singh Bhadare

Inventor： Angus Bewick ,  Santokh Singh Bhadare

IPC: H01J37/285

CPC classification number: H01J37/244 ,  H01J37/26 ,  H01J2237/0203 ,  H01J2237/024 ,  H01J2237/2442 ,  H01J2237/2445 ,  H01J2237/25

Abstract: An x-ray analyser for a transmission electron microscope is described. The analyser has a silicon drift detector moveable in use between an analysis position and a retracted position. The analyser has a housing having an end portion within which the silicon drift detector is retained. The end portion is formed from a material with a relative magnetic permeability of less than 1.004. The analyser also has an automatic retraction system adapted to move the silicon drift detector from the analysis position to the retracted position upon receipt of a trigger signal indicative of a condition in which the power level received by the silicon drift detector from impinging x-rays or electrons is above a predetermined threshold.

Abstract translation: 描述透射电子显微镜的X射线分析仪。 分析仪具有可在分析位置和缩回位置之间使用的硅漂移检测器。 分析仪具有壳体，其具有保持硅漂移检测器的端部部分。 端部由相对磁导率小于1.004的材料形成。 分析仪还具有自动缩回系统，其适于在接收到指示由硅漂移检测器接收的功率电平撞击X射线的条件的触发信号时将硅漂移检测器从分析位置移动到缩回位置，或 电子高于预定阈值。