公开(公告)号：US20160064186A1

公开(公告)日：2016-03-03

申请号：US14469050

申请日：2014-08-26

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang ,  Christopher Lupoli ,  William Davis Lee ,  Frank Sinclair ,  James Pixley

IPC: H01J37/30 ,  H01J37/05 ,  H05H5/06 ,  H01J37/317

CPC classification number: H01J37/3007 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0473 ,  H01J2237/0815 ,  H05H5/063

Abstract: A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece.

Abstract translation: 公开了一种具有改进性能的串联加速器和离子注入机。 串联加速器包括多个输入电极，多个输出电极和设置在它们之间的高电压端子。 高压端子包括剥离管。 将中性分子注入汽提塔，从入射的负离子束中除去电子。 所产生的正离子朝向多个输出电极加速。 为了减少离开汽提塔的不需要的正离子的量，偏压电极设置在汽提塔管的入口和出口处。 偏置电极偏置第二电压，大于施加到端子的第一电压。 偏置电极排斥缓慢移动的正离子，防止它们离开剥离管并污染工件。

公开(公告)号：US20160336138A1

公开(公告)日：2016-11-17

申请号：US14713573

申请日：2015-05-15

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang ,  Jeff Burgess ,  William Leavitt ,  Michael St Peter ,  Matt Mosher ,  Joe Olson ,  Frank Sinclair

IPC: H01J27/08 ,  H01J9/18 ,  H01J9/385 ,  H01J27/02

CPC classification number: H01J27/08 ,  H01J3/04 ,  H01J5/02 ,  H01J9/18 ,  H01J9/385 ,  H01J27/024 ,  H01J37/08

Abstract: Provided herein are approaches for improving ion beam extraction stability and ion beam current for an ion extraction system. In one approach, a source housing assembly may include a source housing surrounding an ion source including an arc chamber, the source housing having an extraction aperture plate mounted at a proximal end thereof. The source housing assembly further includes a vacuum liner disposed within an interior of the source housing to form a barrier around a set of vacuum pumping apertures. As configured, openings in the source housing assembly, other than an opening in the extraction aperture plate, are enclosed by the extraction aperture plate and the vacuum liner, thus ensuring appendix arcs or extraneous ions produced outside the arc chamber remain within the source housing. Just those ions produced within the arc chamber exit the source housing through the opening of the extraction aperture plate.

Abstract translation: 本文提供了用于改进离子提取系统的离子束提取稳定性和离子束电流的方法。 在一种方法中，源壳体组件可以包括围绕包括电弧室的离子源的源壳体，源壳体具有安装在其近端处的抽吸孔板。 源壳体组件还包括设置在源壳体的内部中以在一组真空泵浦孔周围形成屏障的真空衬套。 根据构造，源壳体组件中除了抽吸孔板中的开口之外的开口被提取孔板和真空衬套包围，从而确保在电弧室外产生的附加电弧或外来离子保留在源壳体内。 恰好在电弧室内产生的那些离子通过提取孔板的开口离开源壳体。

公开(公告)号：US09396903B1

公开(公告)日：2016-07-19

申请号：US14615602

申请日：2015-02-06

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang ,  Kristen S. Rounds ,  William Leavitt ,  Michael St. Peter

IPC: C23C14/48 ,  G21K1/08 ,  H01J37/317 ,  H01J37/08 ,  H01J37/10

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/04924

Abstract: An apparatus to control an ion beam for treating a substrate. The apparatus may include a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam, a ground electrode assembly disposed downstream of the fixed electrode. The ground electrode assembly may include a base and a ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position.

Abstract translation: 控制用于处理基板的离子束的装置。 该装置可以包括固定电极，其被配置为使离子束通过固定电极孔并且将固定电极电位施加到离子束，设置在固定电极下游的接地电极组件。 接地电极组件可以包括基部和邻近固定电极设置的接地电极，并且被配置为使离子束通过接地电极孔，接地电极可相对于固定电极的第一轴线在第一位置 以及第二位置，其中当所述接地电极在所述第一位置和所述第二位置之间移动时，所述衬底处的离子束的束电流变化。

公开(公告)号：US09165744B2

公开(公告)日：2015-10-20

申请号：US13658990

申请日：2012-10-24

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang

IPC: H01J37/12 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/12 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/121 ,  H01J2237/151

Abstract: An ion beam scanning assembly includes a set of scanning electrodes defining a gap to accept an ion beam and scan the ion beam in a first plane, and a multipole electrostatic lens system comprising a plurality of electrodes arranged along a portion of a path of travel of the ion beam bounded by the pair of scanning electrodes, the multipole electrostatic lens system configured to shape the ion beam in a direction perpendicular to the first plane.

Abstract translation: 离子束扫描组件包括一组扫描电极，其限定了间隙以接受离子束并在第一平面中扫描离子束;以及多极静电透镜系统，其包括多个电极，其沿着 所述离子束由所述一对扫描电极限定，所述多极静电透镜系统构造成在垂直于所述第一平面的方向上对所述离子束进行成形。

公开(公告)号：US20150228445A1

公开(公告)日：2015-08-13

申请号：US14179988

申请日：2014-02-13

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/1474 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/15 ,  H01J2237/30483 ,  H01J2237/31701

Abstract: A scan system for processing a substrate with an ion beam may include a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis.

Abstract translation: 用于用离子束处理衬底的扫描系统可以包括用于接收具有带状束形状的离子束的扫描器，所述带状束具有沿第一轴的波束宽度和沿着垂直于第二轴的第二轴的波束高度 第一轴，梁宽度比梁高度至少大三倍; 以及扫描电源，用于向扫描仪发送信号以产生偏转磁场，所述偏转场沿着第二轴线偏转带状光束。

公开(公告)号：US08853653B1

公开(公告)日：2014-10-07

申请号：US14037207

申请日：2013-09-25

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Stanislav S. Todorov ,  George M. Gammel ,  Richard Allen Sprenkle ,  Norman E. Hussey ,  Frank Sinclair ,  Shengwu Chang ,  Joseph C. Olson ,  David Roger Timberlake ,  Kurt T. Decker-Lucke

IPC: H01J37/304 ,  G21K5/00 ,  C23C14/48

CPC classification number: C23C14/54 ,  C23C14/48 ,  G21K5/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/31703

Abstract: A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.

Abstract translation: 用于控制离子注入机中的离子束的系统包括检测器系统，用于以第一频率检测离子束的多个束电流测量值和分析部件，以基于多个束电流来确定离子束的变化 测量，对应于在离第一频率不同的第二频率处的离子束的束电流变化的变化。 该系统还包括调整组件以响应于分析组件的输出来调整离子束以减小变化，其中分析组件和调整组件被配置为动态地将离子束的变化降低到阈值以下，同时 在离子注入机中产生离子束。

公开(公告)号：US10074514B1

公开(公告)日：2018-09-11

申请号：US15699255

申请日：2017-09-08

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang ,  Frank Sinclair ,  Alexandre Likhanskii ,  Philip Layne

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/024 ,  H01J2237/04756 ,  H01J2237/30405 ,  H01J2237/31701

Abstract: An apparatus may include an electrode system, the electrode system comprising a plurality of electrodes to guide an ion beam from an entrance aperture to an exit aperture, and a voltage supply to apply a plurality of voltages to the electrode system. The electrode system may comprise an exit electrode assembly, where the exit electrode assembly includes a first exit electrode and a second exit electrode, separated from the first exit electrode by an electrode gap. The first exit electrode and the second exit electrode may be movable with respect to one another so as to change a size of the electrode gap over a gap range.

公开(公告)号：US09679745B2

公开(公告)日：2017-06-13

申请号：US14882518

申请日：2015-10-14

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang ,  Kristen Rounds ,  William Leavitt ,  Daniel Brosnan

IPC: H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3002 ,  H01J37/12 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/04924

Abstract: Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. The system further includes a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply. In an exemplary approach, the lens is electrically insulated from the terminal suppression electrode and independently driven, thus allowing for an increased beam current operation range.

公开(公告)号：US09520204B2

公开(公告)日：2016-12-13

申请号：US14140893

申请日：2013-12-26

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang

IPC: H01J23/00 ,  G21K1/14 ,  H05H5/06 ,  H01J37/317 ,  H01L21/265 ,  H05H7/08

CPC classification number: G21K1/14 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/0048 ,  H01J2237/047 ,  H01J2237/061 ,  H01J2237/082 ,  H01L21/265 ,  H05H5/063 ,  H05H2007/088

Abstract: A cold stripper for a high-energy ion implanter system is provided. The cold stripper including a stripper tube having a hollow cavity, a first aperture in the stripper tube to admit an ion beam of positively charged ions into the hollow cavity and a second aperture in the stripper tube to discharge the ion beam from the hollow cavity, a gas pump coupled to the hollow cavity to introduce a gas into the hollow cavity, one or more cooling passages in the stripper tube, and a coolant pump coupled to the one or more cooling passages to circulate a coolant through the one or more cooling passages.

Abstract translation: 提供了一种用于高能离子注入机系统的冷汽提器。 所述冷汽提器包括具有中空腔的汽提管，所述汽提管中的第一孔，用于允许带正电荷的离子的离子束进入所述中空腔，并且所述汽提管中的第二孔用于从所述中空腔排出离子束， 耦合到所述中空腔的气泵以将气体引入所述中空腔，所述汽提管中的一个或多个冷却通道和联接到所述一个或多个冷却通道的冷却剂泵，以使冷却剂循环通过所述一个或多个冷却通道 。

公开(公告)号：US09437341B2

公开(公告)日：2016-09-06

申请号：US13800979

申请日：2013-03-13

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang

IPC: G21K5/00 ,  H01J27/02 ,  H01J37/08 ,  H01J37/302 ,  H01J37/317

CPC classification number: G21K5/00 ,  H01J27/028 ,  H01J37/08 ,  H01J37/302 ,  H01J37/3171

Abstract: An apparatus to generate negative hydrogen ions includes an ion source operative to generate positive hydrogen ions, a first component to adjust positive molecular hydrogen ion species in the ion source, a second component to adjust extraction voltage for extraction of the positive molecular hydrogen ions from the ion source, and a charge exchange cell comprising charge exchange species to convert the extracted positive molecular hydrogen ions to negative hydrogen ions. The adjusted extraction voltage is effective to generate an ion energy to maximize negative ion current yield in the charge exchange cell based upon a product of extraction efficiency of the positive molecular hydrogen ions and a peak in charge exchange efficiency for converting a species of the positive molecular hydrogen ions to negative hydrogen ions through charge exchange between the extracted hydrogen ions and charge exchange species.

Abstract translation: 产生负氢离子的装置包括可产生正氢离子的离子源，用于调节离子源中的正分子氢离子种类的第一组分，用于调节提取电压以提取正离子氢离子的第二组分 离子源和包含电荷交换物质的电荷交换单元，以将所提取的正分子氢离子转化为负的氢离子。 基于正分子氢离子的提取效率和电荷交换效率的峰值，用于转换正分子的种类，调整的提取电压有效产生离子能量以最大化电荷交换电池中的负离子电流产量 氢离子与负离子之间的氢离子通过电荷交换提取氢离子和电荷交换物质。