摘要:
A cold stripper for a high-energy ion implanter system is provided. The cold stripper including a stripper tube having a hollow cavity, a first aperture in the stripper tube to admit an ion beam of positively charged ions into the hollow cavity and a second aperture in the stripper tube to discharge the ion beam from the hollow cavity, a gas pump coupled to the hollow cavity to introduce a gas into the hollow cavity, one or more cooling passages in the stripper tube, and a coolant pump coupled to the one or more cooling passages to circulate a coolant through the one or more cooling passages.
摘要:
Directed-energy systems and methods are described for disrupting electronic circuits, especially those containing semiconductors. A directed-energy system can include a charged particle generator configured to generate plural energized particles and a charge transformer configured to receive the plural energized particles that include charged particles and to output energized particles that include particles having substantially zero charge. The charged particle generator can be configured to direct the plural energized particles through the charge transformer in a predefined direction. A method for disrupting electronic circuits can include generating plural energized particles, directing the plural energized particles to an incident surface of a charge transformer and transforming the plural energized particles within the charge transformer. The transformed particles can be at substantially zero charge. The method can further include generating a wavefront at an exit surface of the charge transformer including the transformed particles and impinging an electronic circuit with the wavefront.
摘要:
A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.
摘要:
Disclosed is a charge neutralizing device which is capable of being applied to a substrate 13 having a large area and in which electrons having low energy of 5 eV or less, and preferably 2 eV, are supplied so that charge due to ion implantation and damage by the electrons are avoided with respect to a cusp device. The charge neutralizing device includes a microwave generating unit, a plasma generating unit that generates electron plasma using a microwave generated from the microwave generating unit, and a contact unit that brings the electron plasma generated from the plasma generating unit into contact with a beam plasma region including an ion beam.
摘要:
A foil is formed on a given substrate, then, peeled off of the substrate and floated on the water surface charged in a tank. The surface level of the water is decreased to contact the foil to a folding plate of a jug substrate and thus, fold the foil at the folding plate in two. The two surfaces of the foil opposing each other are laminated along a foil forming-supporting plate within a laminating region. The thus laminated foil is dried and annealed except the area in the vicinity of the foil forming-supporting plate, and then, cut along the folding plate, a foil acceptor and a supporting plate, to provide a stripping foil which can be supported by itself.
摘要:
A neutral beam processing apparatus and method uses a neutral beam having an enlarged diameter and an increased capacity with suppressed divergence. The charged particles of the neutral beam are removed and the variations in energy are reduced. In particular, an ion beam is led from a plasma production cell and neutralized in a neutralization cell to be converted to a neutral beam, and an object to be processed is disposed in a process cell that is irradiated with the neutral beam. A multi-aperture electrode and a permanent magnet line are used for separating charged particles from the neutral beam. By an interaction between an electron cyclotron magnetic field generated by the permanent magnet line and microwaves introduced from a waveguide, a plasma and a flat space potential is generated in the neutralization cell. The neutral beam is obtained by converting the ion beam in the flat space potential.
摘要:
An apparatus which can neutralize charge bodies such as processed substrates for semiconductor device and for flat display, free from electromagnetic noise, impurity contamination, and residual potentials. To process in a prescribed way a wafer(5) to be processed, the wafer(5) is, for example, moved from a pretreatment chamber(2) to a low pressure reaction chamber(3). In this case, a gas, which does not react on the wafer, such as nitrogen and argon, is introduced into the pretreatment chamber(2), and is kept under a predetermined pressure by a vacuum pump(15). Then, ultraviolet rays are projected in the pretreatment chamber(2) from an ultraviolet rays lamp(11) constituting a means for generating neutralization charge, and positive and negative floating charged particles(electrons and positive ions) are generated by exiting the atmosphere in the chamber(2). Since the charges are removed by projecting the ultraviolet rays from the outside of a case(1) and the case(2) and moreover in a non-contact way, no electromagnetic noise is generated and the residual potentials are vanished too.
摘要:
A beam charge exchanging apparatus causes the charges of charged particles in a fast particle beam to be exchanged with charges of a gas or other fluid. The apparatus includes; a gas/fluid container disposed in a vacuum and having holes which allow the fast particle beam to pass through the container, a source of gas or other fluid, and a nozzle for introducing the gas into the container. The source and the nozzle are designed to introduce a high speed gas/fluid into the container so that the fast particle beam will collide with the high speed gas/fluid in the container and the charges thereof will be exchanged such that the fast particle beam is converted into a neutral particle beam. The apparatus may further include elements for detecting the quantity of neutral particles resulting from the charge exchange by measuring the quantity of generated ionized gas as an electric current.
摘要:
An electrically charged spherical projectile for use in acceleration devices such as betatrons, cyclotrons, linear accelerators and similar devices. The spherical projectile having a large hollow or low mass filled spherical body which can be electrically charged and perform the same functions as an electron or ion.
摘要:
An ion beam neutralizer. High energy electrons are directed through an ion beam neutralizing zone or region containing an ionizable gas. As the high energy electrons collide with the gas molecules, they ionize the gas molecules and produce low energy electrons which are trapped by a positively charged ion beam. As high energy electrons pass out of the neutralizing zone they are deflected back to the neutralizing zone by a cylindrical conductor biased to deflect the high energy electrons and an accelerating grid for accelerating the electrons back through the beam neutralizing zone.