公开(公告)号：US20070228294A1

公开(公告)日：2007-10-04

申请号：US11597324

申请日：2005-05-24

申请人： Hiroyuki Ito ,  Noriyuki Sakudo ,  Yuichiro Sasaki ,  Bunji Mizuno

发明人： Hiroyuki Ito ,  Noriyuki Sakudo ,  Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： G21K5/00 ,  H01J7/24

CPC分类号： H01J37/3171 ,  G21K1/14 ,  H01J37/026 ,  H01J2237/0044 ,  H01L21/26513 ,  H05H1/46

摘要： Disclosed is a charge neutralizing device which is capable of being applied to a substrate 13 having a large area and in which electrons having low energy of 5 eV or less, and preferably 2 eV, are supplied so that charge due to ion implantation and damage by the electrons are avoided with respect to a cusp device. The charge neutralizing device includes a microwave generating unit, a plasma generating unit that generates electron plasma using a microwave generated from the microwave generating unit, and a contact unit that brings the electron plasma generated from the plasma generating unit into contact with a beam plasma region including an ion beam.

摘要翻译： 公开了一种电荷中和装置，其能够施加到具有大面积的基板13，并且其中提供具有5eV或更小，优选为2eV的低能量的电子，使得由于离子注入和损坏而产生的电荷 相对于尖尖装置避免了电子。 电荷中和装置包括微波发生单元，使用由微波发生单元产生的微波产生电子等离子体的等离子体产生单元，以及将等离子体发生单元产生的电子等离子体与射束等离子体区域接触的接触单元 包括离子束。

公开(公告)号：US5086256A

公开(公告)日：1992-02-04

申请号：US438018

申请日：1989-11-20

申请人： Katsumi Tokiguchi ,  Kensuke Amemiya ,  Noriyuki Sakudo ,  Takayoshi Seki

发明人： Katsumi Tokiguchi ,  Kensuke Amemiya ,  Noriyuki Sakudo ,  Takayoshi Seki

IPC分类号： H01J27/02 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  H05H7/02 ,  H05H9/00

CPC分类号： H01J37/3171 ,  H05H7/02

摘要： An Mev ion implantation apparatus which does not contaminate a sample substrate with heavy metal particles. The apparatus includes an external resonance circuit type RFQ accelerator incluidng undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to the electrodes. The undulated quadrupole electrodes and at least a part of metallic supports for supporting the electrodes and voltage supplying lines are provided with a surface coating of silicon, silicon doped with an impurity such as boron, phosphorus, or arsenic, or a light element having a mass number of 28 or less, such as carbon.

公开(公告)号：US5266146A

公开(公告)日：1993-11-30

申请号：US763206

申请日：1991-09-20

申请人： Yasunori Ohno ,  Takashi Iga ,  Noriyuki Sakudo ,  Kenichi Natsui ,  Isao Hashimoto

发明人： Yasunori Ohno ,  Takashi Iga ,  Noriyuki Sakudo ,  Kenichi Natsui ,  Isao Hashimoto

IPC分类号： H01J27/18 ,  H01J37/08 ,  H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32623 ,  H01J37/32357 ,  H01J37/3266

摘要： A plasma-generating apparatus has a plasma discharge chamber having a plasma-generation region. Microwave energy is applied, while introducing plasma-forming gas, and a magnetic field is applied to the plasma-generation region by an electromagnetic coil extending around the chamber. To enhance the field in the plasma-generation region while reducing it outside said region, and a permanent magnet arrangement is at least partly located radially within the coil so as to provide a unidirectional magnetic field which extends through the whole of the plasma-generation region as seen in radial cross-section and is oriented in the axial direction of the coil.

公开(公告)号：US07166965B2

公开(公告)日：2007-01-23

申请号：US10698673

申请日：2003-10-31

申请人： Hiroyuki Ito ,  Noriyuki Sakudo

发明人： Hiroyuki Ito ,  Noriyuki Sakudo

IPC分类号： H01J7/24 ,  H01J3/14 ,  H01J3/26 ,  C23C16/00 ,  H05B31/26 ,  G21K1/08

CPC分类号： H01P3/12 ,  H01J37/08 ,  H01J2237/0817

摘要： A waveguide of the present invention comprises a waveguide main body made of a material selected from a boron nitride or an aluminum oxide, and a thin film made of a titanium nitride to cover an outer peripheral surface of the waveguide main body. The waveguide of the present invention can efficiently guide an electromagnetic wave such as a microwave, and has high physical and chemical durability.

摘要翻译： 本发明的波导包括由氮化硼或氧化铝选择的材料制成的波导主体和覆盖波导主体的外周面的由氮化钛构成的薄膜。 本发明的波导可以有效地引导微波等电磁波，具有高的物理和化学耐久性。

公开(公告)号：US5506472A

公开(公告)日：1996-04-09

申请号：US240319

申请日：1994-05-10

申请人： Junya Ito ,  Katsumi Tokiguchi ,  Kensuke Amemiya ,  Noriyuki Sakudo

发明人： Junya Ito ,  Katsumi Tokiguchi ,  Kensuke Amemiya ,  Noriyuki Sakudo

IPC分类号： H05H7/04 ,  H05H7/02 ,  H05H9/00 ,  H01J19/74

CPC分类号： H05H7/02

摘要： A secondary coil forming a resonant circuit in cooperation with a quadrupole is composed of conductive tubes and cooled by feeding coolant such as pure water into the tubes which serve as coolant passages. This makes it possible to minimize thermal deformation of the secondary coil when a variable-frequency type radio-frequency quadrupole accelerator is driven with a large amount of power. As a result, variation of the resonant frequency of the resonant circuit, resulting from the deformation of the secondary coil, can be minimized. Consequently, a given ion acceleration ability can be provided. When a coolant passage for use in cooling the primary coil is included and coolant such as pure water is fed into the coolant passage, thermal deformation of the primary coil can be minimized. Thus, impedance matching with the resonant circuit can be maintained on a stable basis. When the secondary coil is made by aligning several unit secondary coils in the axial direction of the quadrupole, the resonant frequency can be varied by mounting or dismounting the unit secondary coils independently.

摘要翻译： 与四极合作形成谐振电路的次级线圈由导电管组成，并通过将诸如纯净水的冷却剂送入用作冷却剂通道的管中来冷却。 这使得当以大量功率驱动可变频率型射频四极加速器时，可以最小化次级线圈的热变形。 结果，由二次线圈的变形引起的谐振电路的谐振频率的变化可以最小化。 因此，可以提供给定的离子加速能力。 当包括用于冷却初级线圈的冷却剂通道时，诸如纯水的冷却剂被供给到冷却剂通道中，可以使初级线圈的热变形最小化。 因此，可以在稳定的基础上保持与谐振电路的阻抗匹配。 当通过在四极杆的轴向对准多个单元次级线圈来制造次级线圈时，可以通过独立地安装或拆卸单元次级线圈来改变谐振频率。

公开(公告)号：US4658143A

公开(公告)日：1987-04-14

申请号：US711824

申请日：1985-03-14

申请人： Katsumi Tokiguchi ,  Hidemi Koike ,  Noriyuki Sakudo ,  Osami Okada ,  Ken Ninomiya ,  Susumu Ozasa

发明人： Katsumi Tokiguchi ,  Hidemi Koike ,  Noriyuki Sakudo ,  Osami Okada ,  Ken Ninomiya ,  Susumu Ozasa

IPC分类号： H01J27/02 ,  H01J27/18 ,  H01J37/08 ,  H01J27/00

CPC分类号： H01J37/08 ,  H01J27/022 ,  H01J27/18

摘要： An ion source equipped with an ion beam exit slit for extracting ions from plasma generated in feed gas introduced into a discharge chamber, and with gas inlet or inlets for introducing the feed gas into the discharge chamber in close proximity of the ion beam exit slit. Ion extraction can be made stably without any deposit on the ion beam exit slit even when a boron halide is used as the feed gas. The effect of the ion source can be further enhanced by adding oxygen, hydrogen or gas of an oxygen-containing compound to the feed gas, and by using a microwave.

摘要翻译： 离子源配备有用于从引入到放电室的进料气体中产生的等离子体提取离子的离子束出口狭缝，以及用于将进料气体引入离子束出口狭缝附近的放电室的气体入口或入口。 即使使用卤化硼作为原料气体，也可以稳定地进行离子提取，而不会在离子束出口狭缝上沉积。 通过向原料气中加入含氧化合物的氧气，氢气或气体，以及使用微波可以进一步提高离子源的效果。

公开(公告)号：US4577396A

公开(公告)日：1986-03-25

申请号：US610485

申请日：1984-05-15

申请人： Naoki Yamamoto ,  Noriyuki Sakudo

发明人： Naoki Yamamoto ,  Noriyuki Sakudo

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  C23F1/02

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/28 ,  H01L21/28518 ,  Y10S148/14

摘要： A silicide layer or silicon alloy layer is formed within a surface region of an impurity-doped region on the surface of a semiconductor substrate by implanting and heating any of those metals which can form silicides or silicon alloys with silicon upon heating.The peel of a metallic electrode or wiring can thus be prevented, and the electrode or wiring can be directly formed on the semiconductor substrate.

摘要翻译： 在半导体衬底的表面上的杂质掺杂区域的表面区域内通过在加热时通过植入和加热可以与硅形成硅化物或硅合金的任何金属来形成硅化物层或硅合金层。 因此可以防止金属电极或布线的剥离，并且可以在半导体基板上直接形成电极或布线。

公开(公告)号：US4409520A

公开(公告)日：1983-10-11

申请号：US247072

申请日：1981-03-24

申请人： Hidemi Koike ,  Noriyuki Sakudo ,  Katsumi Tokiguchi ,  Ichiro Kanomata

发明人： Hidemi Koike ,  Noriyuki Sakudo ,  Katsumi Tokiguchi ,  Ichiro Kanomata

IPC分类号： H01J23/36 ,  H01J27/02 ,  H01J27/16 ,  H01J27/18 ,  H01J37/08 ,  H01L21/265 ,  H01J7/46 ,  H01J19/80

CPC分类号： H01J23/36 ,  H01J27/18 ,  H01J37/08

摘要： A microwave discharge ion source according to this invention comprises a microwave generator, a discharge chamber having ridged electrodes, and a waveguide connecting the microwave generator with the discharge chamber. This waveguide consists of a waveguide having no ridged electrode, and a waveguide having ridged electrodes. Further, a vacuum-sealing dielectric plate is disposed at an intermediate position or an end part of the waveguide having no ridged electrode. A space in the waveguide as extends from the vacuum-sealing dielectric plate to the discharge chamber is filled with a dielectric.As a result, the design and fabrication of the vacuum-sealing dielectric plate are facilitated, and a microwave discharge ion source of high performance is provided.

摘要翻译： 根据本发明的微波放电离子源包括微波发生器，具有脊状电极的放电室和将微波发生器与放电室连接的波导。 该波导由不具有脊状电极的波导和具有脊状电极的波导构成。 此外，真空密封电介质板设置在没有脊状电极的波导的中间位置或端部。 从真空密封电介质板延伸到放电室的波导中的空间填充有电介质。 结果，促进了真空密封电介质板的设计和制造，并且提供了高性能的微波放电离子源。

公开(公告)号：US07557364B2

公开(公告)日：2009-07-07

申请号：US11597324

申请日：2005-05-24

申请人： Hiroyuki Ito ,  Noriyuki Sakudo ,  Yuichiro Sasaki ,  Bunji Mizuno

发明人： Hiroyuki Ito ,  Noriyuki Sakudo ,  Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： G21K5/00 ,  H01J7/24

CPC分类号： H01J37/3171 ,  G21K1/14 ,  H01J37/026 ,  H01J2237/0044 ,  H01L21/26513 ,  H05H1/46

摘要： Disclosed is a charge neutralizing device which is capable of being applied to a substrate 13 having a large area and in which electrons having low energy of 5 eV or less, and preferably 2 eV, are supplied so that charge due to ion implantation and damage by the electrons are avoided with respect to a cusp device. The charge neutralizing device includes a microwave generating unit, a plasma generating unit that generates electron plasma using a microwave generated from the microwave generating unit, and a contact unit that brings the electron plasma generated from the plasma generating unit into contact with a beam plasma region including an ion beam.

摘要翻译： 公开了一种电荷中和装置，其能够施加到具有大面积的基板13，并且其中提供具有5eV或更小，优选为2eV的低能量的电子，使得由于离子注入和损坏而产生的电荷 相对于尖尖装置避免了电子。 电荷中和装置包括微波发生单元，使用由微波发生单元产生的微波产生电子等离子体的等离子体产生单元，以及将等离子体发生单元产生的电子等离子体与射束等离子体区域接触的接触单元 包括离子束。

公开(公告)号：US5053678A

公开(公告)日：1991-10-01

申请号：US323837

申请日：1989-03-15

申请人： Hidemi Koike ,  Noriyuki Sakudo ,  Katsumi Tokiguchi ,  Takayoshi Seki ,  Kensuke Amemiya

发明人： Hidemi Koike ,  Noriyuki Sakudo ,  Katsumi Tokiguchi ,  Takayoshi Seki ,  Kensuke Amemiya

IPC分类号： H01J27/18

CPC分类号： H01J27/18

摘要： A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line. The end surface of the permanent magnet at the microwave lead-in side is coupled with the periphery of the high magnetic permeability material of the acceleration electrode through another high magnetic permeability material to form a magnetic path. The plasma chamber is formed of a dielectric insulator which transmits microwaves well. It is possible to realize an ion source in which ions can be extracted with a high electric field, and in which a high current ion beam can be extracted for a long time.