公开(公告)号：US20140326179A1

公开(公告)日：2014-11-06

申请号：US14037218

申请日：2013-09-25

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Stanislav S. Todorov ,  George M. Gammel ,  Richard Allen Sprenkle ,  Norman E. Hussey ,  Frank Sinclair ,  Shengwu Chang ,  Joseph C. Olson ,  David Roger Timberlake ,  Kurt T. Decker-Lucke

IPC: C23C14/54 ,  G21K5/00

CPC classification number: C23C14/54 ,  C23C14/48 ,  G21K5/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/31703

Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.

Abstract translation: 用于控制离子注入机中的离子束的系统包括检测器，用于沿垂直于离子束传播方向的第一方向执行离子束的多个束电流测量。 该系统还包括分析部件，用于基于多个束电流测量来确定光束电流分布，所述光束电流分布包括沿着第一方向的束电流的变化; 以及当光束电流分布指示光束高度低于阈值时调节离子束沿着第一方向的高度的调节部件。

公开(公告)号：US08853653B1

公开(公告)日：2014-10-07

申请号：US14037207

申请日：2013-09-25

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Stanislav S. Todorov ,  George M. Gammel ,  Richard Allen Sprenkle ,  Norman E. Hussey ,  Frank Sinclair ,  Shengwu Chang ,  Joseph C. Olson ,  David Roger Timberlake ,  Kurt T. Decker-Lucke

IPC: H01J37/304 ,  G21K5/00 ,  C23C14/48

CPC classification number: C23C14/54 ,  C23C14/48 ,  G21K5/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/31703

Abstract: A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.

Abstract translation: 用于控制离子注入机中的离子束的系统包括检测器系统，用于以第一频率检测离子束的多个束电流测量值和分析部件，以基于多个束电流来确定离子束的变化 测量，对应于在离第一频率不同的第二频率处的离子束的束电流变化的变化。 该系统还包括调整组件以响应于分析组件的输出来调整离子束以减小变化，其中分析组件和调整组件被配置为动态地将离子束的变化降低到阈值以下，同时 在离子注入机中产生离子束。

公开(公告)号：US10199257B2

公开(公告)日：2019-02-05

申请号：US15605106

申请日：2017-05-25

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Fletcher Ian Potter ,  Philip Layne ,  Keith A. Fernlund ,  Michael Swears ,  Richard Allen Sprenkle

IPC: H01L21/687 ,  H01L21/68 ,  H01L21/67 ,  H01L21/02 ,  H01L21/48 ,  H01L21/265

Abstract: Embodiments of the disclosure include a fixed position mask for workpiece edge treatment. In some embodiments, an apparatus includes a roplat having a rotatable assembly, and a platen coupled to the rotatable assembly, wherein the platen is configured to hold a workpiece. The apparatus further includes a bracket affixed to the rotatable assembly, and a mask directly coupled to the bracket, wherein the mask is positioned adjacent the workpiece. The mask covers an inner portion of the platen and the workpiece, leaving just an outer circumferential edge of the workpiece exposed to an ion treatment. In some embodiments, the platen is permitted to rotate relative to the bracket during an ion treatment. In some embodiments, the mask includes a solid plate section devoid of any openings, and a mounting portion extending from the plate section, wherein the mounting portion is directly coupled to an extension arm of the bracket.

公开(公告)号：US20180342413A1

公开(公告)日：2018-11-29

申请号：US15605106

申请日：2017-05-25

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Fletcher Ian Potter ,  Philip Layne ,  Keith A. Fernlund ,  Michael Swears ,  Richard Allen Sprenkle

IPC: H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  H01L21/48

CPC classification number: H01L21/68764 ,  H01L21/02021 ,  H01L21/26506 ,  H01L21/4871 ,  H01L21/67213 ,  H01L21/682 ,  H01L21/68721 ,  H01L21/68735

Abstract: Embodiments of the disclosure include a fixed position mask for workpiece edge treatment. In some embodiments, an apparatus includes a roplat having a rotatable assembly, and a platen coupled to the rotatable assembly, wherein the platen is configured to hold a workpiece. The apparatus further includes a bracket affixed to the rotatable assembly, and a mask directly coupled to the bracket, wherein the mask is positioned adjacent the workpiece. The mask covers an inner portion of the platen and the workpiece, leaving just an outer circumferential edge of the workpiece exposed to an ion treatment. In some embodiments, the platen is permitted to rotate relative to the bracket during an ion treatment. In some embodiments, the mask includes a solid plate section devoid of any openings, and a mounting portion extending from the plate section, wherein the mounting portion is directly coupled to an extension arm of the bracket.

公开(公告)号：US09006692B2

公开(公告)日：2015-04-14

申请号：US14037218

申请日：2013-09-25

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Stanislav S. Todorov ,  George M. Gammel ,  Richard Allen Sprenkle ,  Norman E. Hussey ,  Frank Sinclair ,  Shengwu Chang ,  Joseph C. Olson ,  David Roger Timberlake ,  Kurt T. Decker-Lucke

IPC: G21K5/04 ,  C23C14/54 ,  G21K5/00

CPC classification number: C23C14/54 ,  C23C14/48 ,  G21K5/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/31703

Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.

Abstract translation: 用于控制离子注入机中的离子束的系统包括检测器，用于沿垂直于离子束传播方向的第一方向执行离子束的多个束电流测量。 该系统还包括分析部件，用于基于多个束电流测量来确定光束电流分布，所述光束电流分布包括沿着第一方向的束电流的变化; 以及当光束电流分布指示光束高度低于阈值时调节离子束沿着第一方向的高度的调节部件。