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128 条记录 (耗时 0.025 秒)

    Driving circuit for a stepping motor
    111.
    发明授权
    Driving circuit for a stepping motor 失效
    步进电机的驱动电路

    公开(公告)号：US4564796A

    公开(公告)日：1986-01-14

    申请号：US575685

    申请日：1984-01-31

    申请人： Tsunemi Yoshino ,  Akira Takashima

    发明人： Tsunemi Yoshino ,  Akira Takashima

    IPC分类号： H02P8/14 ,  H02P8/26 ,  H02P8/32 ,  H02P8/00

    CPC分类号： H02P8/26 ,  H02P8/14

    摘要： A driving circuit for a stepping motor drives the stepping motor in two-phase operation for most of the time period of driving and switches to a single-phase operation immediately before stopping the stepping motor, thereby achieving compatibility between high speed rotation and stable stopping position.

    摘要翻译： 用于步进电机的驱动电路在驱动的大部分时间内驱动步进电动机，并且在停止步进电机之前切换到单相操作，从而实现高速旋转和稳定停止位置之间的兼容性 。

    Freely machinable aluminum alloy
    112.
    发明授权
    Freely machinable aluminum alloy 失效
    可自由加工的铝合金

    公开(公告)号：US4005243A

    公开(公告)日：1977-01-25

    申请号：US597374

    申请日：1975-07-18

    申请人： Yoshio Baba ,  Akira Takashima

    发明人： Yoshio Baba ,  Akira Takashima

    IPC分类号： C22C21/06 ,  B32B15/04

    CPC分类号： C22C21/06

    摘要： An aluminum alloy with freely-machinable or free-cutting properties and corrosion resistance consists essentially of aluminum, copper, magnesium, tin, lead, and silicon and optionally further contains small amounts of any one or more of the elements selected from chromium, manganese, titanium, vanadium and zirconium. This alloy has the property for preventing peeling-off of an anodically oxidized surface layer after being heated at an elevated temperature.

    摘要翻译： 具有可自由加工或自由切割性能和耐腐蚀性的铝合金基本上由铝，铜，镁，锡，铅和硅组成，并且任选地还含有少量的任何一种或多种选自铬，锰， 钛，钒和锆。 该合金具有防止在高温下加热后阳极氧化的表面层的剥离的性质。

    Nonvolatile memory device
    113.
    发明授权
    Nonvolatile memory device 有权
    非易失性存储器件

    公开(公告)号：US09379320B2

    公开(公告)日：2016-06-28

    申请号：US13362832

    申请日：2012-01-31

    申请人： Masao Shingu ,  Akira Takashima ,  Koichi Muraoka

    发明人： Masao Shingu ,  Akira Takashima ,  Koichi Muraoka

    IPC分类号： H01L45/00 ,  H01L27/06 ,  H01L27/24 ,  H01L27/10

    CPC分类号： H01L45/1273 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1675

    摘要： According to one embodiment, a nonvolatile memory device includes a memory section. The memory section includes a first insulating layer, a second insulating layer and a pair of electrodes. The second insulating layer is formed on and in contact with the first insulating layer. The second insulating layer has at least one of a composition different from a composition of the first insulating layer and a phase state different from a phase state of the first insulating layer. The pair of electrodes is capable of passing a current through a current path along a boundary portion between the first insulating layer and the second insulating layer. An electrical resistance of the current path is changed by a voltage applied between the pair of electrodes.

    摘要翻译： 根据一个实施例，非易失性存储器件包括存储器部分。 存储部分包括第一绝缘层，第二绝缘层和一对电极。 第二绝缘层形成在第一绝缘层上并与第一绝缘层接触。 第二绝缘层具有与第一绝缘层的组成不同的组成和与第一绝缘层的相位状态不同的相位状态中的至少一个。 一对电极能够使电流通过沿着第一绝缘层和第二绝缘层之间的边界部分的电流路径。 通过施加在该对电极之间的电压来改变电流路径的电阻。

    Nonvolatile semiconductor memory
    114.
    发明授权
    Nonvolatile semiconductor memory 失效
    非易失性半导体存储器

    公开(公告)号：US08779503B2

    公开(公告)日：2014-07-15

    申请号：US13424544

    申请日：2012-03-20

    申请人： Daisuke Matsushita ,  Akira Takashima

    发明人： Daisuke Matsushita ,  Akira Takashima

    IPC分类号： H01L29/792

    CPC分类号： H01L21/28273 ,  H01L21/28282 ,  H01L21/764 ,  H01L27/11521 ,  H01L27/11568

    摘要： According to one embodiment, a nonvolatile semiconductor memory includes a semiconductor layer, a first insulating layer on the semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer. The second insulating layer comprises a stacked structure provided in order of a first lanthanum aluminate layer, a lanthanum aluminum silicate layer and a second lanthanum aluminate layer from the charge storage layer side to the control gate electrode side.

    摘要翻译： 根据一个实施例，非易失性半导体存储器包括半导体层，半导体层上的第一绝缘层，第一绝缘层上的电荷存储层，电荷存储层上的第二绝缘层，以及控制栅电极 第二绝缘层。 第二绝缘层包括按照从电荷存储层侧到控制栅电极侧的第一铝酸镧层，硅酸铝镧层和第二铝酸镧层的顺序提供的叠层结构。

    NON-VOLATILE RESISTANCE CHANGE DEVICE
    115.
    发明申请
    NON-VOLATILE RESISTANCE CHANGE DEVICE 审中-公开
    非易失性电阻变化器件

    公开(公告)号：US20130234087A1

    公开(公告)日：2013-09-12

    申请号：US13605917

    申请日：2012-09-06

    申请人： Takashi Yamauchi ,  Yoshifumi Nishi ,  Jiezhi Chen ,  Akira Takashima ,  Minoru Amano

    发明人： Takashi Yamauchi ,  Yoshifumi Nishi ,  Jiezhi Chen ,  Akira Takashima ,  Minoru Amano

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1675

    摘要： A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2  AB

    摘要翻译： 非易失性电阻变化装置包括由金属元件构成的第一电极，第二电极，形成在第一电极和第二电极之间的可变电阻层，在与可变电阻相反的一侧形成在第一电极上的第一布线 层和在与可变电阻层相反的一侧形成在第二电极上的第二布线。 如果将第一布线的宽度表示为A（nm），则表示为B（nm）的第二布线的宽度以及表示为L0（nm）的第一电极和第二电极之间的距离，下式为 满意：3 2 AB

    LANTHANOID ALUMINATE FILM FABRICATION METHOD
    117.
    发明申请
    LANTHANOID ALUMINATE FILM FABRICATION METHOD 有权
    兰蔻酸铝薄膜制造方法

    公开(公告)号：US20110284365A1

    公开(公告)日：2011-11-24

    申请号：US13192687

    申请日：2011-07-28

    申请人： Tsunehiro INO ,  Akira Takashima

    发明人： Tsunehiro INO ,  Akira Takashima

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3464 ,  C23C14/08

    摘要： A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.

    摘要翻译： 公开了一种通过共溅射沉积制造具有增强的电绝缘性的镧系铝酸盐膜的方法，这是因为抑制了膜的组成偏差。 首先在真空室内保持两个独立的靶，其中一个靶由铝酸镧（LnAlO3）制成，另一个由氧化铝（Al2O3）制成。 然后，将基板输送并加载到真空室中。 接下来，将选择的溅射气体引入该室。 此后，一次进行两个靶的溅射，从而在基板表面上形成镧系铝酸盐膜。 该薄膜适用于高度小型化的金属氧化物半导体（MOS）晶体管中的超薄高介电常数（高k）栅极电介质。

    Nonvolatile semiconductor storage device and manufacturing method therefor
    119.
    发明授权
    Nonvolatile semiconductor storage device and manufacturing method therefor 有权
    非易失性半导体存储装置及其制造方法

    公开(公告)号：US07718490B2

    公开(公告)日：2010-05-18

    申请号：US12318493

    申请日：2008-12-30

    申请人： Hiroshi Watanabe ,  Atsuhiro Kinoshita ,  Akira Takashima ,  Daisuke Hagishima

    发明人： Hiroshi Watanabe ,  Atsuhiro Kinoshita ,  Akira Takashima ,  Daisuke Hagishima

    IPC分类号： H01L21/336 ,  H01L29/788

    CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

    摘要： A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film.

    摘要翻译： 非易失性半导体存储器件包括半导体衬底; 形成在所述半导体衬底中的多个隔离区; 在相邻隔离区域之间形成的元件形成区域; 设置在元件形成区域上的第一栅极绝缘膜; 设置在第一栅极绝缘膜上并且面向元件形成区域的下边缘的宽度比沿着与方向垂直的方向截取的截面中的元件形成区域的宽度窄的浮栅电极 其中隔离区域延伸; 设置在所述浮栅电极上的第二栅极绝缘膜; 以及设置在第二栅极绝缘膜上的控制栅电极。