公开(公告)号：US06870310B2

公开(公告)日：2005-03-22

申请号：US10618008

申请日：2003-07-14

Applicant: Masahiko Okunuki ,  Hiroya Ohta ,  Norio Saito ,  Masaki Takakuwa ,  Sayaka Tanimoto ,  Takeshi Haraguchi

Inventor： Masahiko Okunuki ,  Hiroya Ohta ,  Norio Saito ,  Masaki Takakuwa ,  Sayaka Tanimoto ,  Takeshi Haraguchi

IPC: G03F7/20 ,  H01J1/46 ,  H01J3/02 ,  H01J29/46 ,  H01J37/06 ,  H01J37/07 ,  H01J37/09 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/027 ,  H01J3/029 ,  H01J37/07 ,  H01J37/09

Abstract: This invention provides a multielectron gun which generates a plurality of electron beams having uniform characteristics. A multielectron gun (2) is formed of a plurality of electron guns (2a-2c). The electron gun (2a) has, in addition to an electron source (21a), Wehnelt electrode (22a), and anode electrode (23), a shield electrode (24) between the Wehnelt electrode (22a) and anode electrode (23). The shield electrode reduces field interference among the electron guns.

Abstract translation: 本发明提供一种多电子枪，其产生具有均匀特性的多个电子束。 多电子枪（2）由多个电子枪（2a-2c）形成。 电子枪（2a）除了电子源（21a），Wehnelt电极（22a）和阳极电极（23）之外还具有在Wehnelt电极（22a）和阳极电极（23）之间的屏蔽电极（24） 。 屏蔽电极减少电子枪之间的场干扰。

公开(公告)号：US06794296B1

公开(公告)日：2004-09-21

申请号：US09786966

申请日：2001-04-10

Applicant: Rainer Kassing ,  Christophe Mihalcea ,  Egbert Oesterschulze

Inventor： Rainer Kassing ,  Christophe Mihalcea ,  Egbert Oesterschulze

IPC: H01L21302

CPC classification number: B81C1/00087 ,  B81B2201/047 ,  B81B2203/0361 ,  B81C2201/0132 ,  G01Q60/06 ,  G01Q60/22 ,  G01Q60/38 ,  G02B27/58 ,  H01J9/02 ,  H01J37/09

Abstract: The invention relates to a method for producing an aperture (10) in a semiconductor material (12) comprising the following steps: Preparing a semiconductor wafer (14), for example, a (100)-oriented silicon wafer having an upper surface (16) and a lower surface (18); producing a cavity (20) with a side wall (22) in the upper surface (16) of the semiconductor wafer (14) by partially etching said upper surface (16), whereby the cavity (20) comprises a closed bottom area (24) which faces the lower surface (18) and which preferably has, in particular, a convex or, in particular, a concave corner or edge or a curvature of this type. After depositing an oxide layer (26) on the semiconductor material (12) at least in the area of the cavity (20) by oxidizing the semiconductor material (12), whereby the oxide layer (26) preferably comprises an inhomogeneity (28) in the bottom area (24), the semiconductor material (14) is selectively etched back on the lower surface (18) of the semiconductor wafer (14) until at least the oxide layer (26) located in the bottom area (24) is exposed. Afterwards, the exposed oxide layer (26) is etched until it is at least severed. In addition, the invention relates to an aperture (10) in a semiconductor material (12) especially produced according to the inventive method, and to different uses of such an aperture (10).

Abstract translation: 本发明涉及一种用于在半导体材料（12）中制造孔（10）的方法，包括以下步骤：准备半导体晶片（14），例如具有上表面（16）的（100）取向的硅晶片 ）和下表面（18）; 通过部分地蚀刻所述上表面（16），在半导体晶片（14）的上表面（16）中产生具有侧壁（22）的空腔（20），由此空腔（20）包括封闭的底部区域 ），其特别优选地具有凸形或特别是这种类型的凹角或边缘或曲率。 在通过氧化半导体材料（12）至少在空腔（20）的区域中在半导体材料（12）上沉积氧化物层（26）之后，氧化物层（26）优选地包含不均匀性（28） 底部区域（24），半导体材料（14）被选择性地回蚀在半导体晶片（14）的下表面（18）上，直到至少位于底部区域（24）中的氧化物层（26）被暴露 。 之后，暴露的氧化物层（26）被蚀刻直至至少被切断。 另外，本发明涉及一种特别根据本发明方法制造的半导体材料（12）中的孔（10）以及这种孔（10）的不同用途。

公开(公告)号：US06730916B1

公开(公告)日：2004-05-04

申请号：US09691234

申请日：2000-10-19

Applicant: Hiroshi Tsuji ,  Mitsuru Inoue ,  Norio Saitou ,  Yasuhiro Someda ,  Yoshimasa Fukushima

Inventor： Hiroshi Tsuji ,  Mitsuru Inoue ,  Norio Saitou ,  Yasuhiro Someda ,  Yoshimasa Fukushima

IPC: H01J3720

CPC classification number: H01J37/09 ,  H01J37/20 ,  H01J2237/3175 ,  H02K11/01 ,  H02K41/03

Abstract: An electron beam lithography apparatus of the present invention prevents the electron beam trajectory from being affected by a leakage magnetic field from a permanent magnet which is used as a sample stage guide/driving mechanism. In this electron beam lithography apparatus, an air bearing guide is used as a sample stage guide mechanism, and the stage posture is held by attracting the stage floating on a surface plate to the surface plate side by the permanent magnet. To avoid the leakage magnetic field from the permanent magnet from affecting the electron beam irradiation position on the sample, the permanent magnet is magnetically shielded by a shield member. In addition, to reduce variations in magnetic field above the sample, which are generated when the shield member moves in a leakage magnetic field from the electron lens, another shield member is arranged under the electron lens.

Abstract translation: 本发明的电子束光刻设备防止电子束轨迹受到用作样品台引导/驱动机构的永久磁铁的泄漏磁场的影响。 在该电子束光刻装置中，使用空气轴承引导件作为样品台引导机构，通过永久磁铁吸引在表面板上浮动到台板侧的台架来保持台阶姿态。 为了避免来自永磁体的泄漏磁场影响样品上的电子束照射位置，永磁体被屏蔽部件磁屏蔽。 此外，为了减小当屏蔽部件在来自电子透镜的泄漏磁场中移动时产生的样品上方的磁场的变化，在电子透镜下方设置有另一个屏蔽部件。

公开(公告)号：US20030038243A1

公开(公告)日：2003-02-27

申请号：US10209752

申请日：2002-07-31

Applicant: Nikon Corporation

Inventor： Atsushi Yamada

IPC: H01J003/12

CPC classification number: H01J37/09 ,  H01J2237/3175

Abstract: Charged-particle-beam (CPB) optical systems are disclosed in which external magnetic fields are effectively canceled. Such systems are especially suitable for use in CPB microlithography systems in which extreme isolation from external magnetic fields is required in each of the lens columns of the system. In an embodiment, four magnetic-field sensors are situated downstream of the substrate stage of the CPB microlithography system. The sensors are located in a plane perpendicular to the optical axis and situated equi-angularly relative to each other about the optical axis. Each sensor can be configured as, e.g., a Hall-effect sensor, a magnetic-resistance sensor, or a search coil (the latter for detecting AC magnetic fields). Most desirably, the sensors are incorporated into a single sensor capable of detecting magnetic fields in each of the X, Y, and Z directions. The sensors can be used in conjunction with an active-canceller.

Abstract translation: 公开了其中外部磁场被有效地消除的带电粒子束（CPB）光学系统。 这种系统特别适用于CPB微光刻系统，其中在系统的每个透镜柱中需要与外部磁场的极端隔离。 在一个实施例中，四个磁场传感器位于CPB微光刻系统的衬底台的下游。 传感器位于垂直于光轴并且相对于彼此围绕光轴等角度定位的平面中。 每个传感器可以被配置为例如霍尔效应传感器，磁阻传感器或搜索线圈（后者用于检测AC磁场）。 最希望的是，传感器被并入到能够检测X，Y和Z方向中的每一个中的磁场的单个传感器中。 传感器可与主动消除器一起使用。

公开(公告)号：US20020121615A1

公开(公告)日：2002-09-05

申请号：US09996527

申请日：2001-11-28

Applicant: Nikon Corporation

Inventor： Mamoru Nakasuji

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/0264

Abstract: CPB microlithography systems are disclosed that effectively cancel the effects of floating external magnetic fields and that exhibit a high magnetic shielding ratio using small components. An exemplary system includes a search coil situated and configured to detect external magnetic field, and a compensation coil situated and configured to produce a magnetic field that, based on the detected magnetic field, cancels the external magnetic field. These coils desirably are situated downstream of an illumination lens. The external magnetic field detected by the search coil is converted to a corresponding electrical signal by an external-magnetic-field-detection circuit and routed to an external-magnetic-field-compensation circuit to which the compensation coil is connected. The external-magnetic-field-compensation circuit cancels the external magnetic field by providing an electrical current, corresponding to the detected external magnetic field, to the compensation coil. A search coil and compensation coil also can be provided in a similar manner downstream of a second projection lens, and provided with a respective external-magnetic-field-detection circuit and external-magnetic-field-compensation circuit.

Abstract translation: 公开了CPB微光刻系统，其有效地消除了浮动的外部磁场的影响，并且使用小的部件表现出高的磁屏蔽比。 示例性系统包括位于并被配置为检测外部磁场的搜索线圈，以及位于并被配置为产生基于所检测的磁场抵消外部磁场的磁场的补偿线圈。 这些线圈期望地位于照明透镜的下游。 由搜索线圈检测的外部磁场由外部磁场检测电路转换成相应的电信号，并被路由到与补偿线圈连接的外部磁场补偿电路。 外部磁场补偿电路通过向补偿线圈提供与检测到的外部磁场相对应的电流来抵消外部磁场。 搜索线圈和补偿线圈也可以以类似的方式在第二投影透镜的下游提供，并且设置有相应的外部磁场检测电路和外部磁场补偿电路。

公开(公告)号：US20020038852A1

公开(公告)日：2002-04-04

申请号：US09908473

申请日：2001-07-17

Applicant: Nikon Corporation

Inventor： Shohei Suzuki

IPC: H01J001/52

CPC classification number: H01J37/09 ,  H01J2237/0264 ,  H01J2237/3175

Abstract: To provide a method using compact, simple, lightweight apparatus, for canceling the effects, on a charged particle beam optical system, of magnetic fields external to the system, and of fields formed on the outer skin of a beam tube of the particle beam exposure system. External magnetic fields penetrate through the openings A, B, and C to the optical axis of the charged particle beam exposure system, disrupting the operation of the charged particle beam optical system. In this mode of the invention, as shown in the drawing, the coils 5, 6, and 7 are wound horizontally, on the illumination optical system beam tube 1 and the exposure optical system beam tube 2. Currents flowing in these coils can therefore create magnetic fields parallel to the optical axis such as to cancel external magnetic fields in that direction.. Each of the three coils (5, 6, and 7) in FIG. 3 are driven by separate power supplies capable of adjusting the individual coil currents as required to minimize the effects of flux leakage on the beam.

Abstract translation: 为了提供使用紧凑，简单，重量轻的装置的方法，用于消除在带电粒子束光学系统上对系统外部的磁场的影响，以及形成在粒子束曝光的束管外表面上的场 系统。 外部磁场通过开口A，B和C穿过带电粒子束曝光系统的光轴，破坏带电粒子束光学系统的操作。 在本发明的这种模式中，如图所示，线圈5,6和7水平地缠绕在照明光学系统光束管1和曝光光学系统光束管2上。因此，在这些线圈中流动的电流可以产生 磁场平行于光轴，以抵消在该方向上的外部磁场。图3中的三个线圈（5,6和7）中的每一个。 3由独立的电源驱动，能够根据需要调节各个线圈电流，以最小化磁通量对光束的影响。

公开(公告)号：US20010036588A1

公开(公告)日：2001-11-01

申请号：US09775924

申请日：2001-02-02

Applicant: IMS-Ionen Mikrofabrikations Systeme GmbH

Inventor： Herbert Buschbeck ,  Alfred Chalupka ,  Ernst Haugeneder ,  Gertraud Lammer ,  Hans Loschner

IPC: G03C008/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F7/2037 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/0453 ,  H01J2237/0458

Abstract: A particle beam lithography method for imaging a structure pattern onto one or more fields on a substrate (11) by means of electrically charged particles, e.g. ions, in which a particle beam is shaped into a desired beam pattern by means of a mask positioned in the particle beam, converted into a beam pattern by apertures in the mask and projected onto the substrate to form an image of the mask apertures. According to the invention, a plurality of masks is positioned on one mask carrier, thus offering a plurality of aperture patterns which are used for producing structure patterns to be imaged onto respective areas (S) of the substrate. The patterns thus imaged, as a whole, combine together to form e.g. the total pattern of a die-field (D) of the substrate (11). By means of reference marks provided for each mask reference beamlets are produced, projected and measured with respect to their position, and from the measurement, alignment control signals are determined for aligning the position of the imaged pattern with a desired position on the substrate.

Abstract translation: 一种粒子束光刻方法，用于通过带电粒子将结构图案成像到衬底（11）上的一个或多个场上。 离子，其中通过位于粒子束中的掩模将粒子束成形为期望的束图案，通过掩模中的孔转换成束图案并投影到基底上以形成掩模孔的图像。 根据本发明，多个掩模位于一个掩模载体上，从而提供多个孔径图案，其用于产生要成像到基板的相应区域（S）上的结构图案。 因此，这样成像的图案整体上结合在一起， 基板（11）的模场（D）的总图案。 通过为每个掩模提供的参考标记，产生相对于其位置的投影和测量的子束，并且从测量中确定对准控制信号，以将成​​像图案的位置与基板上的期望位置对准。

公开(公告)号：US20010028037A1

公开(公告)日：2001-10-11

申请号：US09766129

申请日：2001-01-19

Inventor： Shohei Suzuki

IPC: G21K001/08 ,  H01J003/14 ,  H01J003/26 ,  H01J049/42

CPC classification number: H01J37/1471 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/02 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/3175

Abstract: Hollow-beam apertures and methods for using same are disclosed, especially for achieving alignment of the beam center with the center of the hollow-beam aperture. The hollow-beam apertures define beam-transmissive portions (e.g., through-holes) that form a hollow beam propagating downstream of the hollow-beam aperture. Also included is a relatively thick region that causes absorption of at least a portion of the incident beam and may also cause localized scattering of the beam. Absorption of charged particles generates an electrical current that can be measured. From such current measurements accompanying controlled displacement of the incident beam, a measurement of the lateral beam-intensity distribution can be obtained. I.e., the current typically is maximal whenever the beam center is aligned with the center of the hollow-beam aperture. Lateral beam adjustment can be achieved using an aligner (deflector assembly).

Abstract translation: 公开了空心光束孔及其使用方法，特别是用于实现光束中心与中空光束孔的中心的对准。 中空光束孔限定了透射部分（例如，通孔），其形成在中空光束孔径的下游传播的中空光束。 还包括引起至少一部分入射光束的吸收的相对较厚的区域，并且还可能引起光束的局部散射。 带电粒子的吸收产生可以测量的电流。 根据伴随入射光束受控位移的这种电流测量，可以获得横向光束强度分布的测量。 即，当光束中心与中空光束孔径的中心对准时，电流通常是最大的。 可以使用对准器（偏转器组件）实现横梁调节。

公开(公告)号：US5883393A

公开(公告)日：1999-03-16

申请号：US55435

申请日：1998-04-06

Applicant: Fu-Kang Tien ,  H. J. Chang

Inventor： Fu-Kang Tien ,  H. J. Chang

IPC: H01J27/02 ,  H01J27/08 ,  H01J37/09

CPC classification number: H01J27/024 ,  H01J27/08 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/08 ,  H01J2237/31701

Abstract: A plurality of removable shields are disclosed for use with ion source in ion implanters. Specifically, the shields fit over the extraction electrode assembly, the sides of the interior walls and the cold-plate inside an ion source chamber. The shields are easily mountable and dismountable by the maintenance personnel. It is shown that shields can very effectively protect the insides of ion source from contamination by toxic materials emanating from the ionization source. A method is also disclosed for cleaning the shields outside the ion source by means of bead blasting followed by washing by deionized water and rinse with isopropyl alcohol. It is shown that the turn-around-time for preventive maintenance of an ion source in an ion implanter can be shortened by a factor of four.

Abstract translation: 公开了用于离子注入机中的离子源的多个可移除屏蔽件。 具体地说，屏蔽件适合于提取电极组件，内壁的侧面和离子源室内的冷板。 护罩可以由维护人员轻松安装和拆卸。 显示屏蔽可以非常有效地保护离子源的内部免受从电离源发出的有毒材料的污染。 还公开了一种通过珠粒喷射清洁离子源外部的屏蔽物，然后用去离子水洗涤并用异丙醇冲洗的方法。 表明离子注入机中离子源的预防性维护的周转时间可以缩短四倍。

公开(公告)号：US5763895A

公开(公告)日：1998-06-09

申请号：US782709

申请日：1997-01-13

Applicant: Fu-Kang Tien ,  H. J. Chang

Inventor： Fu-Kang Tien ,  H. J. Chang

IPC: H01J27/02 ,  H01J27/08 ,  H01J37/09 ,  H01J37/20

CPC classification number: H01J27/024 ,  H01J27/08 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/08 ,  H01J2237/31701

Abstract: A plurality of removable shields are disclosed for use with ion source in ion implanters. Specifically, the shields fit over the extraction electrode assembly, the sides of the interior walls and the cold-plate inside an ion source chamber. The shields are easily mountable and dismountable by the maintenance personnel. It is shown that shields can very effectively protect the insides of ion source from contamination by toxic materials emanating from the ionization source. A method is also disclosed for cleaning the shields outside the ion source by means of bead blasting followed by washing by deionized water and rinse with isopropyl alcohol. It is shown that the turn-around-time for preventive maintenance of an ion source in an ion implanter can be shortened by a factor of four.