Abstract:
A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.
Abstract:
The present invention provides a charged particle beam device which can effectively restrain misalignment of an optical axis even if a position of an anode is changed. The present invention is a charged particle beam device comprising a cathode provided with a charged particle source which emits a charged particle, an anode which applies an electric field to the emitted charged particle, a charged particle beam deflector which deflects an orbit of a charged particle beam having passed the anode, and a charged particle beam detector which detects the charged particle beam from a sample to which the charged particle is irradiated, wherein a distance changing mechanism which changes a distance between the cathode and the anode, corresponding to a charged particle amount emitted from the charged particle source and a deflection amount control mechanism which detects a condition of the deflector under which the charged particle dose detected from the sample scanned by deflecting the charged particle beam in the changed distance becomes a desired size and controls deflection of the deflector at sample measurement on the basis of the condition are provided.
Abstract:
A system and method for removing an organic residue from a charged particle beam system includes a conduit that is coupled to the column and is for adding oxygen to the column. A heater is coupled to the column and is for increasing the temperature in the column. A pump is coupled to the column and is for removing a gas from the chamber, wherein the gas is a byproduct of a chemical reaction of the organic residue and the oxygen.
Abstract:
The ion implantation apparatus includes a source head, an extraction electrode having a slit trough which a part of an ion beam outputted from the source head passes, a magnet for curving a trajectory of the ion beam passed through the slit, a target to be irradiated with the ion beam outputted from the magnet, an electric current measuring device facing an ion exit port of the source head through the slit of the extraction electrode, and a control portion for controlling a position of the extraction electrode based on a measured result of the current measuring device in a state that production of a magnetic field from the magnet is stopped.
Abstract:
An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.
Abstract:
In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
Abstract:
There are provided a charged particle beam apparatus and a method of adjusting an axis of an aperture capable of adjusting a position of a center axis of the aperture easily and accurately in a short period of time.A charged particle beam apparatus 1 includes a charged particle source 9, an aperture 18, an object lens 12, observing means 32, an aperture driving portion 19, and a control portion 30. The control portion 30 includes spot pattern forming means 33 for forming a plurality of spot patterns on a surface N1 of a sample N by irradiating a charged particle beam I, analyzing means for calculating a position of a spot center of the spot pattern and a geometrical center position of a halo, and adjusting position determining means 35 for calculating an adjusting position based on a position of intersecting lines of connecting the positions of the spot centers of the respective spot patterns and the center position of the halo, in which a position of the aperture 18 is adjusted by moving the center axis of the aperture 18 to the adjusting position.
Abstract:
Techniques for measuring and controlling ion beam angle and density uniformity are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring and controlling ion beam angle and density uniformity. The apparatus may include a measuring assembly having an opening, a cup, and at least one collector at the rear of the cup. The apparatus may further include an actuator to move the measuring assembly along an actuation path to scan an ion beam to measure and control ion beam uniformity.
Abstract:
It is an object of this invention to improve contact precision and probe operability. This invention controls sample stage movement and probe movement on an observation image using a single coordinate system, thereby allowing positioning using a sample stage stop error as a probe control movement amount. This invention also figures out the position of the tip of a probe using the observation image and stores the coordinates of the probe at a reference position on the image. This invention facilitates precise probe contact operation to a sample position of the order of microns.
Abstract:
In a particle-optical projection system a pattern is imaged onto a target by means of energetic electrically charged particles. The pattern is represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over; it is imaged into an image with a given size and distortion. To compensate for the Z-deviation of the image position from the actual positioning of the target (Z denotes an axial coordinate substantially parallel to the optical axis), without changing the size of the image, the system includes a position detector for measuring the Z-position of several locations of the target, and a controller for calculating modifications of selected lens parameters of the final particle-optical lens and controlling said lens parameters according to said modifications.