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    Magnetoresistive sensor employing an exchange-bias enhancing layer
    104.
    发明授权
    Magnetoresistive sensor employing an exchange-bias enhancing layer 失效
    使用交换偏置增强层的磁阻传感器

    公开(公告)号：US5668523A

    公开(公告)日：1997-09-16

    申请号：US449605

    申请日：1995-05-23

    Applicant: Mao-Min Chen ,  Kenneth Ting-Yuan Kung ,  Ching Hwa Tsang

    Inventor： Mao-Min Chen ,  Kenneth Ting-Yuan Kung ,  Ching Hwa Tsang

    IPC: G11B5/39 ,  H01F10/32

    CPC classification number: B82Y25/00 ,  G11B5/3903 ,  G11B5/399 ,  H01F10/3218

    Abstract: An exchange-biased magnetoresistive (MR) read transducer in which the MR layer composition is changed at the interface with an antiferromagnetic layer, which is in direct contact with the ferromagnetic MR layer. The exchange-bias field strength H.sub.UA in the MR layer is increased at room temperature by adding a specially-optimized transition region in the ferromagnetic MR layer at the interface. The percentage of iron in the ferromagnetic alloy varies from a higher value at the interface to a lower value at the opposite end of the transition region. The higher iron ratio at the antiferromagnetic interface enhances the exchange-bias field H.sub.UA and the lower iron ratio throughout the bulk of the ferromagnetic MR layer maintains the lower coercivity preferred in the layer, thereby enhancing the longitudinal bias field with respect to the MR coercivity. Advantageously, the enhanced longitudinal bias effect of the special ferromagnetic transition region does not reduce the critical temperature T.sub.cr at which the temperature-dependent exchange-bias field H.sub.UA (T) approaches zero.

    Abstract translation: 交换偏置磁阻（MR）读取传感器，其中MR层组成在与铁磁MR层直接接触的反铁磁层的界面处改变。 MR层中的交换偏置场强HUA在室温下通过在界面处的铁磁性MR层中加入特别优化的过渡区而增加。 铁磁合金中铁的百分比从界面处的较高值到过渡区域相对端的较低值变化。 反铁磁性界面处铁含量越高，交换偏置场HUA越大，铁磁MR层整体的铁含量越低，维持层中优选的矫顽力越低，从而增强纵向偏磁场相对于MR矫顽力。 有利的是，特殊铁磁过渡区的增强的纵向偏置效应不会降低温度相关的交换偏置场HUA（T）接近零的临界温度Tcr。

    Thin layer magnetic structures for binary information stores
    105.
    发明授权
    Thin layer magnetic structures for binary information stores 失效
    用于二进制信息存储的薄层磁结构

    公开(公告)号：US3880602A

    公开(公告)日：1975-04-29

    申请号：US10858771

    申请日：1971-01-21

    Applicant: CENTRE NAT RECH SCIENT

    Inventor： VALIN JEAN ,  BRUYERE JEAN CLAUDE

    IPC: H01F10/10 ,  H01F10/32 ,  H01F10/02

    CPC classification number: B82Y25/00 ,  H01F10/10 ,  H01F10/3218 ,  Y10S29/028 ,  Y10S428/928 ,  Y10S428/941 ,  Y10T428/12465 ,  Y10T428/12597 ,  Y10T428/12778 ,  Y10T428/12861

    Abstract: In binary data information stores, the storing member may comprise a thin layer magnetic structure made of at least one ferromagnetic layer, or of two such layers interacting through a non-magnetic film coupling. In such structures, the so-called ''''creep'''' phenomenon, and other disturbing phenomenons, lessen when the coercive magnetic field increases. Said coercive magnetic field is made of an increased apparent value from providing one of the faces of such a structure with a thin lamina of a magnetic material having a rigid magnetic lattice which is randomly inorganized at the microscopic scale.

    Abstract translation: 在二进制数据信息存储器中，存储部件可以包括由至少一个铁磁层或两个这样的层通过非磁性膜耦合相互作用的薄层磁性结构。 在这种结构中，当矫顽磁场增加时，所谓的“蠕变”现象和其它干扰现象减轻。

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