公开(公告)号：US20240105746A1

公开(公告)日：2024-03-28

申请号：US18368372

申请日：2023-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongmin JEON ,  Hajin LIM ,  Keewon KIM ,  Kijoong YOON ,  Taeksoo JEON ,  Jsesung Hur

IPC: H01L27/146 ,  G02B5/04

CPC classification number: H01L27/14625 ,  G02B5/04 ,  H01L27/14685

Abstract: An image sensor includes a light detector disposed on a substrate and including a plurality of light sensing cells, an interlayer device disposed on the light detector and configured to transmit a light, and a nano prism including a first nano post and a second nano post spaced apart from each other on the interlayer device and configured to condense a light onto the light detector, the first nano post includes a first refractive layer doped with aluminum at a first doping concentration, and a second refractive layer surrounding a bottom surface and a side surface of the first refractive layer and doped with aluminum at a second doping concentration, and the first doping concentration is higher than the second doping concentration.

公开(公告)号：US20190088857A1

公开(公告)日：2019-03-21

申请号：US16191727

申请日：2018-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hwan PARK ,  Whankyun KIM ,  Keewon KIM ,  Youngman JANG

IPC: H01L43/02 ,  H01L43/08 ,  H01F10/32 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

公开(公告)号：US20170338403A1

公开(公告)日：2017-11-23

申请号：US15360221

申请日：2016-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin KIM ,  Keewon KIM ,  S.P. Stuart PARKIN ,  Jaewoo JEONG ,  Mahesh Govind SAMANT

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01F10/32

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3218 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.