公开(公告)号：US20150236186A1

公开(公告)日：2015-08-20

申请号：US14185567

申请日：2014-02-20

申请人： NARSINGH B. SINGH ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： NARSINGH B. SINGH ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L31/0336 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US09048375B2

公开(公告)日：2015-06-02

申请号：US13799448

申请日：2013-03-13

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Matthew Law ,  Amanda S. Weber ,  Sean Seefeld ,  James Puthussery

IPC分类号： B05D1/02 ,  B05D3/02 ,  H01L31/18 ,  B05D3/04 ,  B05D1/00

CPC分类号： B05D1/005 ,  B05D1/02 ,  B05D3/0254 ,  B05D3/0453 ,  H01L31/0336 ,  H01L31/0368 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： Systems and methods are provided for fabricating pyrite thin films from molecular inks. A process is provided that comprises dissolving simple iron-bearing and sulfur-bearing molecules in an appropriate solvent and then depositing the solution onto an appropriate substrate using one of several methods (roll-to-roll coating, spraying, spin coating, etc.), resulting in a solid film consisting of the molecules. These molecular precursor films are then heated to 200-600° C. in the presence of sulfur-bearing gases (e.g., S2, H2S) to convert the molecular films into films of crystalline iron pyrite (FeS2).

摘要翻译： 提供了从分子油墨制造黄铁矿薄膜的系统和方法。 提供了一种方法，其包括将简单的含铁和含硫分子溶解在合适的溶剂中，然后使用几种方法之一（辊对辊涂布，喷涂，旋涂等）将溶液沉积到合适的基材上， ，得到由分子组成的固体膜。 然后在含硫气体（例如S2，H2S）的存在下将这些分子前体膜加热至200-600℃，以将分子膜转化成结晶铁黄铁矿（FeS 2）的膜。

公开(公告)号：US09029833B2

公开(公告)日：2015-05-12

申请号：US14471001

申请日：2014-08-28

申请人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

发明人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L31/028 ,  H01L27/148 ,  H01L31/0336 ,  H01L27/146

CPC分类号： H01L31/028 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/148 ,  H01L31/0336

摘要： Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

摘要翻译： 提出了紫外或极紫外和/或可见的检测器装置和制造方法，其中检测器包括设置在半导体表面上的薄的石墨烯电极结构，以在半导体材料表面中建立电位并且收集光生载流子，第一 接触提供用于半导体结构的顶侧或底侧连接以及用于连接到石墨烯层的第二接触。

公开(公告)号：US08829331B2

公开(公告)日：2014-09-09

申请号：US13908215

申请日：2013-06-03

申请人： Dimerond Technologies, LLC

发明人： Dieter M. Gruen

IPC分类号： H01L31/042 ,  H01L31/0232 ,  B82Y10/00 ,  H01L31/00 ,  H01L29/06 ,  H01L29/15 ,  H02S10/10 ,  H01L29/16

CPC分类号： H01L31/035227 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/06 ,  H01L29/0676 ,  H01L29/15 ,  H01L29/1606 ,  H01L29/1608 ,  H01L31/00 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0543 ,  H01L31/0547 ,  H01L51/0048 ,  H02S10/10 ,  H02S40/44 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/60

摘要： An apparatus comprising a high-temperature photovoltaic transducer that is disposed between a source of light and another modality of solar energy conversion such that both the high-temperature photovoltaic transducer and the another modality of solar energy conversion generate electricity using a same source of light.

摘要翻译： 一种装置，包括设置在光源和另一种太阳能转换模式之间的高温光电转换器，使得高温光伏换能器和另一模式的太阳能转换都使用相同的光源发电。

公开(公告)号：US20140116508A1

公开(公告)日：2014-05-01

申请号：US14150585

申请日：2014-01-08

申请人： Stion Corporation

发明人： Howard W.H. Lee

IPC分类号： H01L31/0248

CPC分类号： H01L31/0248 ,  H01L31/0336 ,  H01L31/03365 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/0392 ,  Y02E10/50

摘要： A thin film material structure for solar cell devices. The thin film material structure includes a thickness of material comprises a plurality of single crystal structures. In a specific embodiment, each of the single crystal structure is configured in a column like shape. The column like shape has a dimension of about 0.01 micron to about 10 microns characterizes a first end and a second end. An optical absorption coefficient of greater than 104 cm−1 for light in a wavelength range comprising about 400 cm−1 to about 700 cm−1 characterizes the thickness of material.

摘要翻译： 一种用于太阳能电池器件的薄膜材料结构。 薄膜材料结构包括材料的厚度包括多个单晶结构。 在具体实施例中，单晶结构中的每一个被配置成柱状形状。 柱状形状具有约0.01微米至约10微米的尺寸，表征第一端和第二端。 对于包含约400cm -1至约700cm -1的波长范围内的光，大于104cm -1的光学吸收系数表征材料的厚度。

公开(公告)号：US20140102891A1

公开(公告)日：2014-04-17

申请号：US14104203

申请日：2013-12-12

申请人： MiaSole

发明人： Dennis R. Hollars

IPC分类号： H01L31/18 ,  C23C14/34

CPC分类号： H01L31/18 ,  C23C14/0057 ,  C23C14/3414 ,  C23C14/352 ,  C23C14/562 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0336 ,  Y02E10/541 ,  Y02P70/521

摘要： A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

摘要翻译： 完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。 使用双圆柱形旋转磁控管技术，由专门制备的导电靶共溅射铜铟镓二硒化物（Cu（In x Ga 1-x）Se 2）吸收层（X为1至约0.7）。 吸收层的带隙可以通过改变镓含量来分级，并且通过用铝部分或全部替换镓来分级。 或者，在硒化氢气体存在下，吸收层从金属合金靶反应溅射。 使用RF溅射沉积含有ZnS的不含镉的窗口层。 顶部透明电极是反应溅射的铝掺杂的ZnO。 描述了一种独特的模块化真空辊对辊溅射机。 该机器适用于采用双圆柱形旋转磁控管技术，以单程制造改进的太阳能电池材料。

公开(公告)号：US20140099748A1

公开(公告)日：2014-04-10

申请号：US14100960

申请日：2013-12-09

申请人： Ascent Solar Technologies, Inc.

发明人： Lawrence M. Woods ,  Rosine M. Ribelin ,  Prem Nath

IPC分类号： H01L31/18 ,  H01L31/0336 ,  H01L31/0725 ,  H01L21/02

CPC分类号： H01L31/18 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/385 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/046 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

摘要： A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

摘要翻译： 多结光伏电池包括在基板上形成的基板和背接触层。 在背面接触层上形成低带隙IB-IIIB-VIB2族材料太阳能吸收层。 异质结伙伴层形成在低带隙太阳能吸收层上，以帮助形成底部电池结，异质结伙伴层包括至少一层具有至少100欧姆 - 厘米电阻率的高电阻率材料层。 高电阻率材料具有式（Zn和/或Mg）（S，Se，O和/或OH）。 在异质结伙伴层之上形成导电互连层，并且在导电互连层上形成至少一个附加的单结光伏电池作为顶部电池。 顶部单元可以具有非晶硅或p型硒化镉太阳能吸收层。 硒化镉可以用氯化物掺杂工艺从n型转变成p型。

公开(公告)号：US20140053903A1

公开(公告)日：2014-02-27

申请号：US14069531

申请日：2013-11-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Naoyuki Nakagawa ,  Soichiro Shibasaki ,  Mutsuki Yamazaki ,  Shinya Sakurada ,  Michihiko Inaba

IPC分类号： H01L31/0336

CPC分类号： H01L31/0336 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

摘要： A photoelectric conversion element of an embodiment includes: a light absorbing layer containing copper (Cu), at least one Group IIIb element selected from the group including aluminum (Al), indium (In) and gallium (Ga), and sulfur (S) or selenium (Se), and having a chalcopyrite structure; and a buffer layer formed from zinc (Zn) and oxygen (O) or sulfur (S), wherein the molar ratio represented by S/(S+O) of the buffer layer is equal to or greater than 0.7 and equal to or less than 1.0, and the crystal grain size is equal to or greater than 10 nm and equal to or less than 100 nm.

摘要翻译： 实施方式的光电转换元件包括：包含铜（Cu）的光吸收层，选自铝（Al），铟（In）和镓（Ga）和硫（S））中的至少一种IIIb族元素， 或硒（Se），并具有黄铜矿结构; 和由锌（Zn）和氧（O）或硫（S）形成的缓冲层，其中由缓冲层的S /（S + O）表示的摩尔比等于或大于0.7，等于或小于 并且晶粒尺寸等于或大于10nm且等于或小于100nm。

公开(公告)号：US20130344643A1

公开(公告)日：2013-12-26

申请号：US13922566

申请日：2013-06-20

申请人： Commissariat a l'energie atomique et aux energies alternatives

发明人： Christophe Kopp ,  Jean-Marc Fedeli ,  Sylvie Menezo

IPC分类号： H01L31/0336

CPC分类号： H01L31/105 ,  H01L31/0336 ,  H01L31/035281 ,  Y02E10/50

摘要： A PIN structure semiconductor optical receiver includes first and second electrical contact layers and an intrinsic layer disposed between them. The intrinsic layer includes a stud having a stud axis and a stud cross-section. The first and second contact layers have dimensions in a plane perpendicular to the stud axis that are greater than the stud's cross-section. These layers are also elongated and have longitudinal axes offset angularly relative to each other to minimize facing areas of said electrical contact layers.

公开(公告)号：US20130298985A1

公开(公告)日：2013-11-14

申请号：US13876652

申请日：2011-09-29

申请人： Davis S. Darvish ,  Harry A. Atwater

发明人： Davis S. Darvish ,  Harry A. Atwater

IPC分类号： H01L21/02 ,  H01L31/0336 ,  H01L29/24

CPC分类号： H01L21/02565 ,  C30B23/04 ,  C30B29/16 ,  H01L29/242 ,  H01L31/0336 ,  H01L31/03365 ,  H01L31/072 ,  H01L33/005 ,  Y02E10/50

摘要： The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like.

摘要翻译： 本发明提供了制造更高质量p-n异质结的策略，其中掺入了氧化亚铜和适用于形成异质结的另一种材料。 当纳入微电子器件时，预期这些改进的异质结将提供改进的微电子特性，例如改善的缺陷密度，特别是在pn异质结处的较低的界面缺陷密度，导致改进的微电子器件，例如具有改进的开路电压的太阳能电池器件， 填充因子，效率，电流密度等。