Semiconductor thin film and process for producing the same
    100.
    发明授权
    Semiconductor thin film and process for producing the same 有权
    半导体薄膜及其制造方法

    公开(公告)号:US08062777B2

    公开(公告)日:2011-11-22

    申请号:US12090731

    申请日:2006-08-07

    IPC分类号: B32B19/00

    摘要: This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10+1 to 10+8 Ωcm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor thin film.

    摘要翻译: 本发明提供了一种透明氧化物半导体,其包括以氧化铟为主要成分的氧化物和氧化铈作为添加剂,并且具有不发生光衍生的故障的特性,因此薄膜的电阻率没有变化 通过加热等,迁移率高,以及其制造方法。 使用特征在于包含氧化铟和氧化铈并且是结晶并具有10 + 1至10 + 8&OHgr cm的电阻率的半导体薄膜。 该半导体薄膜的电阻率没有显着变化,迁移率高。 因此,可以通过构造使用该半导体薄膜的开关元件来提供具有改善的开关特性的元件。