发明授权
US08642402B2 Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device
有权
薄膜晶体管制造方法，薄膜晶体管，薄膜晶体管基板和图像显示装置，图像显示装置和半导体装置
- 专利标题： Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device
- 专利标题（中）： 薄膜晶体管制造方法，薄膜晶体管，薄膜晶体管基板和图像显示装置，图像显示装置和半导体装置
-
申请号： US12526304申请日： 2008-02-06
-
公开(公告)号： US08642402B2公开(公告)日： 2014-02-04
- 发明人: Koki Yano , Kazuyoshi Inoue , Futoshi Utsuno , Masashi Kasami
- 申请人： Koki Yano , Kazuyoshi Inoue , Futoshi Utsuno , Masashi Kasami
- 申请人地址： JP Tokyo
- 专利权人： Idemitsu Kosan Co., Ltd.
- 当前专利权人： Idemitsu Kosan Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Millen, White, Zelano & Branigan, P.C.
- 优先权： JP2007-030591 20070209; JP2007-032546 20070213; JP2007-038392 20070219
- 国际申请： PCT/JP2008/051905 WO 20080206
- 国际公布： WO2008/096768 WO 20080814
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L21/8232 ; H01L29/04 ; H01L29/10 ; H01L31/036 ; H01L31/00 ; H01L29/76 ; H01L31/112
摘要：
To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device.In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×1017/cm3. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X]/([X]+[In]) is 0.0001 to 0.13.
公开/授权文献
信息查询
IPC分类:
