公开(公告)号：US10651031B2

公开(公告)日：2020-05-12

申请号：US16183927

申请日：2018-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Takanori Koide ,  Naoki Yamada ,  Jae-soon Lim ,  Tsubasa Shiratori ,  Youn-joung Cho

IPC: H01L23/52 ,  H01L21/44 ,  H01L21/02 ,  H01L49/02 ,  H01L21/768 ,  H01L21/285 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US20150228663A1

公开(公告)日：2015-08-13

申请号：US14598659

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Seung-min Ryu

IPC: H01L27/115 ,  H01L21/285 ,  H01L29/49 ,  H01L21/768

CPC classification number: H01L27/11582 ,  C23C16/045 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76879 ,  H01L27/11556 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract translation: 提供一种制造半导体器件的方法。 制备包括形成孔的结构的基板。 包含镍醇盐化合物的前体气化。 通过在基材上提供包含镍醇盐化合物的蒸发前体，在孔中形成含镍层。

公开(公告)号：US11081389B2

公开(公告)日：2021-08-03

申请号：US16711845

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Younsoo Kim ,  Gyu-hee Park ,  Jaesoon Lim ,  Younjoung Cho

IPC: H01L21/768 ,  H01L21/285 ,  H01L27/108 ,  H01L21/8238

Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

公开(公告)号：US20230220213A1

公开(公告)日：2023-07-13

申请号：US18145142

申请日：2022-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAE WOON KIM ,  Seung-min Ryu ,  Haruyoshi Sato ,  Kazuya Saito ,  Masayuki Kimura ,  Takahiro Yoshii ,  Tsubasa Shiratori ,  Min Jae Sung ,  Gyu-Hee Park ,  Youn Joung Cho

IPC: C09D1/00 ,  C07F3/00 ,  H10B12/00

CPC classification number: C09D1/00 ,  C07F3/003 ,  H10B12/033

Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1:




M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.

公开(公告)号：US11043553B2

公开(公告)日：2021-06-22

申请号：US16520912

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L21/02 ,  H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US10134582B2

公开(公告)日：2018-11-20

申请号：US15298275

申请日：2016-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Takanori Koide ,  Naoki Yamada ,  Jae-soon Lim ,  Tsubasa Shiratori ,  Youn-joung Cho

IPC: H01L21/44 ,  H01L23/52 ,  H01L21/02 ,  C07F9/00 ,  C23C16/16 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US11929389B2

公开(公告)日：2024-03-12

申请号：US17324492

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L21/28 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L28/40 ,  H10B12/315

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US10882873B2

公开(公告)日：2021-01-05

申请号：US16249067

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Kang-yong Lee ,  Sang-ick Lee ,  Sang-yong Jeon

IPC: C07F7/22 ,  C23C16/455 ,  C23C16/40

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.

公开(公告)号：US20200091275A1

公开(公告)日：2020-03-19

申请号：US16520912

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US09391089B2

公开(公告)日：2016-07-12

申请号：US14598659

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Seung-min Ryu

IPC: H01L27/115 ,  H01L21/768 ,  H01L21/285 ,  H01L29/49 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L27/11582 ,  C23C16/045 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76879 ,  H01L27/11556 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract translation: 提供一种制造半导体器件的方法。 制备包括形成孔的结构的基板。 包含镍醇盐化合物的前体气化。 通过在基材上提供包含镍醇盐化合物的蒸发前体，在孔中形成含镍层。