Abstract:
A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
Abstract:
A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
Abstract:
A cache managing method of a display driving apparatus may be provided. The display driving apparatus including an encoder to generate compressed data by compressing raw data, a memory to store the compressed data, and a decoder to restore the compressed data and including a payload cache may be provided. The cache managing method including requesting an access to the compressed data, and managing the payload cache using a linked list according to the access request to the compressed data may be provided.
Abstract:
In a method of cleaning a substrate, a protecting liquid may be sprayed to a surface of the substrate from a first position in a first spray direction. Cleaning droplets may be injected on to the surface of the substrate. The protecting liquid may be sprayed to the surface of the substrate from a second position different from the first position in a second spray direction. For example, the protecting liquid may be always sprayed from the central portion toward the edge portions in the substrate so that the protecting liquid on the substrate may have a uniform thickness.
Abstract:
A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.
Abstract:
An integrated circuit device includes an electrically conductive pattern on a substrate. This electrically conductive pattern may be a gate pattern of a field effect transistor. A first electrically insulating spacer is provided on a sidewall of the electrically conductive pattern. The first electrically insulating spacer includes a first lower spacer and a first upper spacer, which extends on the first lower spacer and has a side surface vertically aligned with a corresponding side surface of the first lower spacer. The first upper spacer has a greater dielectric constant relative to a dielectric constant of the first lower spacer. A pair of parallel channel regions may also be provided, which protrude from a surface of the substrate. The electrically conductive pattern may surround top and side surfaces of the pair of parallel channel regions.
Abstract:
A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.
Abstract:
A semiconductor cleaning process system includes a process chamber configured to hold a semiconductor substrate, a cleaning solution supply unit configured to provide a cleaning solution to the process chamber, the cleaning solution including an organic fluoride, an organic acid and an organic solvent, a recycling unit configured to collect the cleaning solution discharged from the process chamber, a first concentration measuring unit configured to evaluate a fluorine concentration of a collected solution in the recycling unit, and a sub-cleaning solution supply unit configured to provide the organic fluoride to the cleaning solution supply unit based on the fluorine concentration evaluated by the first concentration measuring unit.
Abstract:
Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.