SEMICONDUCTOR DEVICES HAVING COMPOSITE SPACERS CONTAINING DIFFERENT DIELECTRIC MATERIALS
    6.
    发明申请
    SEMICONDUCTOR DEVICES HAVING COMPOSITE SPACERS CONTAINING DIFFERENT DIELECTRIC MATERIALS 有权
    具有包含不同介质材料的复合间隔物的半导体器件

    公开(公告)号:US20150162332A1

    公开(公告)日:2015-06-11

    申请号:US14543140

    申请日:2014-11-17

    Abstract: An integrated circuit device includes an electrically conductive pattern on a substrate. This electrically conductive pattern may be a gate pattern of a field effect transistor. A first electrically insulating spacer is provided on a sidewall of the electrically conductive pattern. The first electrically insulating spacer includes a first lower spacer and a first upper spacer, which extends on the first lower spacer and has a side surface vertically aligned with a corresponding side surface of the first lower spacer. The first upper spacer has a greater dielectric constant relative to a dielectric constant of the first lower spacer. A pair of parallel channel regions may also be provided, which protrude from a surface of the substrate. The electrically conductive pattern may surround top and side surfaces of the pair of parallel channel regions.

    Abstract translation: 集成电路器件包括在衬底上的导电图案。 该导电图案可以是场效应晶体管的栅极图案。 第一电绝缘垫片设置在导电图案的侧壁上。 第一电绝缘间隔件包括第一下间隔件和第一上间隔件,其在第一下间隔件上延伸并且具有与第一下间隔件的对应侧表面垂直对准的侧表面。 第一上间隔物相对于第一下间隔物的介电常数具有更大的介电常数。 还可以设置一对平行的通道区域,其从衬底的表面突出。 导电图案可以围绕该对平行通道区域的顶表面和侧表面。

    SEMICONDUCTOR CLEANING PROCESS SYSTEM AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    8.
    发明申请
    SEMICONDUCTOR CLEANING PROCESS SYSTEM AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
    半导体清洗工艺系统及制造半导体器件的方法

    公开(公告)号:US20170069513A1

    公开(公告)日:2017-03-09

    申请号:US15168713

    申请日:2016-05-31

    Abstract: A semiconductor cleaning process system includes a process chamber configured to hold a semiconductor substrate, a cleaning solution supply unit configured to provide a cleaning solution to the process chamber, the cleaning solution including an organic fluoride, an organic acid and an organic solvent, a recycling unit configured to collect the cleaning solution discharged from the process chamber, a first concentration measuring unit configured to evaluate a fluorine concentration of a collected solution in the recycling unit, and a sub-cleaning solution supply unit configured to provide the organic fluoride to the cleaning solution supply unit based on the fluorine concentration evaluated by the first concentration measuring unit.

    Abstract translation: 半导体清洗处理系统包括:配置成保持半导体衬底的处理室,构造成向处理室提供清洁溶液的清洗溶液供应单元,包括有机氟化物,有机酸和有机溶剂的清洗溶液,循环利用 被配置为收集从处理室排出的清洗溶液的单元,被配置为评估回收单元中的收集溶液的氟浓度的第一浓度测量单元和被配置为将有机氟化物提供给清洁的辅助清洁溶液供应单元 溶液供应单元,其基于由第一浓度测量单元评估的氟浓度。

    Semiconductor Device and Method for Fabricating the Same
    9.
    发明申请
    Semiconductor Device and Method for Fabricating the Same 有权
    半导体器件及其制造方法

    公开(公告)号:US20140299934A1

    公开(公告)日:2014-10-09

    申请号:US14194837

    申请日:2014-03-03

    CPC classification number: H01L29/7848 H01L29/66545 H01L29/785

    Abstract: Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.

    Abstract translation: 提供一种半导体器件。 半导体器件在衬底上包括翅片; 栅电极跨越衬底上的翅片; 源极/漏极,形成在栅电极的两侧中的至少一个上,并且包括第一膜和第二膜; 以及布置在基板上的隔离膜和源极/漏极之间并且形成在鳍的侧表面上的应力膜。

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