公开(公告)号：US20190123159A1

公开(公告)日：2019-04-25

申请号：US16220028

申请日：2018-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Myung-Yoon UM ,  Young-Joon PARK ,  Jeong-Hyo LEE ,  Ji-Yong HA ,  Jun-sun HWANG

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

公开(公告)号：US20210280682A1

公开(公告)日：2021-09-09

申请号：US17329240

申请日：2021-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Myung-Yoon UM ,  Young-Joon PARK ,  Jeong-Hyo LEE ,  Ji-Yong HA ,  Jun-sun HWANG

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/088

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

公开(公告)号：US20160380075A1

公开(公告)日：2016-12-29

申请号：US15170230

申请日：2016-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yup CHUNG ,  Hyun-Jo KIM ,  Seong-Yul PARK ,  Se-Wan PARK ,  Jong-Mil YOUN ,  Jeong-Hyo LEE ,  Hwa-Sung RHEE ,  Hee-Don JEONG ,  Ji-Yong HA

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L27/092 ,  H01L29/161

CPC classification number: H01L29/66545 ,  H01L21/76229 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7854 ,  H01L29/7855

Abstract: A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

Abstract translation: 半导体器件包括鳍状图案，其包括彼此相对的第一短边和第二短边，与第一短边接触的第一沟槽，与第二短边接触的第二沟槽，第一场绝缘 所述第一场绝缘膜包括从所述第一短边顺序布置的第一部分和第二部分，并且所述第一部分的高度不同于所述第二部分的高度;第二场绝缘膜， 第二沟槽和第一场绝缘膜的第一部分上的第一伪栅极。