公开(公告)号：US20170062435A1

公开(公告)日：2017-03-02

申请号：US15162912

申请日：2016-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun IM ,  Han-Jin LIM ,  Jin-Won MA ,  Kong-Soo LEE ,  Ki-Vin IM

IPC: H01L27/108 ,  H01L29/06 ,  H01L23/532 ,  H01L23/522 ,  H01L23/535 ,  H01L23/528

CPC classification number: H01L27/10814 ,  B82Y10/00 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/53271 ,  H01L23/535 ,  H01L27/10823 ,  H01L27/10852 ,  H01L28/90 ,  H01L29/0676 ,  H01L29/66439 ,  H01L29/775

Abstract: Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.

Abstract translation: 提供半导体器件及其制造方法。 半导体装置可以包括基板，基板上的金属层，金属层上的种子层，种子层上的柱状的纳米线，保形地覆盖纳米线的电介质膜，以及电介质膜上的电极膜 。

公开(公告)号：US20140264778A1

公开(公告)日：2014-09-18

申请号：US14180907

申请日：2014-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Jin LIM ,  Bong-Hyun KIM ,  Seok-Woo NAM ,  Dong-Woon SHIN ,  In-Sang JEON ,  Soo-Jin HONG

IPC: C07F7/12 ,  H01L23/00 ,  H01L21/28

CPC classification number: H01L23/564 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L23/562 ,  H01L29/165 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3): HxSiAy(NR1R2)4-x-y  (1) HxSi(NAR3)4-x  (2) HxSi(R4)z(R5)4-x-z  (3) wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen

Abstract translation: 一种用于在基底上形成二氧化硅膜的前体组合物，所述前体组合物包含至少一种由以下化学式（1），（2）和（3）表示的前体化合物：HxSiAy（NR1R2）4-xy（1 ）其中独立地在化学式（1），（2）和（3）中，H是氢，x，x，x，x，y， 为0〜3，Si为硅，A为卤素，y为1〜4，N为氮，R1，R2，R3，R5各自独立地选自H，芳基，全卤代芳基，C1-8 烷基和C 1-8全卤代烷基，R 4是其中至少一个氢被卤素或C 1-8烷基取代的芳基，其中至少一个氢被卤素

公开(公告)号：US20190386024A1

公开(公告)日：2019-12-19

申请号：US16555113

申请日：2019-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Suk LEE ,  Hong-Suk KIM ,  Jae-Young AHN ,  Han-Jin LIM

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10

Abstract: A vertical memory device includes a first structure having a lower semiconductor pattern structure filling a recess on a substrate and protruding from an upper surface of the substrate in a first direction substantially perpendicular to the upper surface of the substrate, the lower semiconductor pattern structure including a first undoped semiconductor pattern, a doped semiconductor pattern, and a second undoped semiconductor pattern sequentially stacked, and a lower surface of the doped semiconductor pattern being lower than the upper surface of the substrate, and an upper semiconductor pattern extending in the first direction on the lower semiconductor pattern structure, and a plurality of gate electrodes surrounding a sidewall of the first structure, the plurality of gate electrodes being at a plurality of levels, respectively, so as to be spaced apart from each other in the first direction.