公开(公告)号：US20140264778A1

公开(公告)日：2014-09-18

申请号：US14180907

申请日：2014-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Jin LIM ,  Bong-Hyun KIM ,  Seok-Woo NAM ,  Dong-Woon SHIN ,  In-Sang JEON ,  Soo-Jin HONG

IPC: C07F7/12 ,  H01L23/00 ,  H01L21/28

CPC classification number: H01L23/564 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L23/562 ,  H01L29/165 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3): HxSiAy(NR1R2)4-x-y  (1) HxSi(NAR3)4-x  (2) HxSi(R4)z(R5)4-x-z  (3) wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen

Abstract translation: 一种用于在基底上形成二氧化硅膜的前体组合物，所述前体组合物包含至少一种由以下化学式（1），（2）和（3）表示的前体化合物：HxSiAy（NR1R2）4-xy（1 ）其中独立地在化学式（1），（2）和（3）中，H是氢，x，x，x，x，y， 为0〜3，Si为硅，A为卤素，y为1〜4，N为氮，R1，R2，R3，R5各自独立地选自H，芳基，全卤代芳基，C1-8 烷基和C 1-8全卤代烷基，R 4是其中至少一个氢被卤素或C 1-8烷基取代的芳基，其中至少一个氢被卤素

公开(公告)号：US20150235852A1

公开(公告)日：2015-08-20

申请号：US14535437

申请日：2014-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Hee LIM ,  Ki-Jae HUR ,  Sung-Hwan KIM ,  Hae-In JUNG ,  Soo-Jin HONG

IPC: H01L21/265 ,  H01L21/324 ,  H01L29/66 ,  H01L21/306

CPC classification number: H01L21/26506 ,  H01L21/324 ,  H01L29/4236 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78

Abstract: In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成栅极结构。 在由栅极结构暴露的衬底的上部进行离子注入工艺，使得形成离子注入区域以具有膨胀的体积。 离子注入工艺使用与衬底材料相同的离子。