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    SYSTEM AND METHOD OF CLEANING PROCESS CHAMBERS USING PLASMA
    2.
    发明申请
    SYSTEM AND METHOD OF CLEANING PROCESS CHAMBERS USING PLASMA 有权

    公开(公告)号：US20220098729A1

    公开(公告)日：2022-03-31

    申请号：US17034937

    申请日：2020-09-28

    Applicant: Applied Materials, Inc.

    Inventor： Fei WU ,  Abdul Aziz KHAJA ,  Amit Kumar BANSAL ,  Tuan Anh (Mike) NGUYEN ,  Qian SUI

    IPC: C23C16/44 ,  C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  H01J37/32

    Abstract: The present disclosure relates to a method for cleaning one or more chamber components having contaminants. The method includes introducing a gas mixture to a remote plasma source, the gas mixture includes argon, an oxygen-containing gas and a nitrogen-containing gas. The argon to oxygen gas ratio in the gas mixture is about 0.2:1 to about 1:1 by volume. A plasma is formed from the gas mixture in the remote plasma source. The plasma includes oxygen radicals, argon radicals, and nitrogen radicals. The plasma is introduced to a process volume of the process chamber and exposes surfaces of one or more chamber components. The process volume of the process chamber has a pressure of about 10 mTorr to about 6 Torr and a temperature above 300° C.

    RADIO FREQUENCY GROUND SYSTEM AND METHOD
    3.
    发明申请
    RADIO FREQUENCY GROUND SYSTEM AND METHOD 有权

    公开(公告)号：US20210391147A1

    公开(公告)日：2021-12-16

    申请号：US16898650

    申请日：2020-06-11

    Applicant: Applied Materials, Inc.

    Inventor： Gaosheng FU ,  Tuan Anh NGUYEN ,  Amit Kumar BANSAL

    IPC: H01J37/32 ,  H05H1/46

    Abstract: The present disclosure provides an apparatus including a chamber body and a lid defining a volume therein. The apparatus includes a substrate support disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem, and a ground plate disposed between the support body and the stem. A top flange is coupled to a lower peripheral surface the ground plate and a bottom flange is coupled to a bottom of the chamber body. The bottom flange and the top flange is coupled to one another with a plurality of straps, each of the straps having a first end coupled to the bottom flange and a second end coupled to the top flange.

    GAS INPUT SYSTEM FOR A SUBSTRATE PROCESSING CHAMBER
    4.
    发明申请
    GAS INPUT SYSTEM FOR A SUBSTRATE PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20200075353A1

    公开(公告)日：2020-03-05

    申请号：US16519586

    申请日：2019-07-23

    Applicant: Applied Materials, Inc.

    Inventor： Tejas ULAVI ,  Thuy BRITCHER ,  Amit Kumar BANSAL

    IPC: H01L21/67 ,  G05D7/06

    Abstract: A substrate processing system includes a processing chamber that includes a substrate support positioned therein. The substrate processing system includes a valve system fluidly coupled to the processing chamber and configured to control flow of gas into the processing chamber. The valve system includes a primary flow line and a first gas source flow line fluidly coupled to the primary flow line through a first gas source valve. The valve system includes a second gas source flow line fluidly coupled to the primary flow line through a second gas source valve. The first gas source valve and the second gas source valve are positioned in series within the primary flow line.

    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES
    6.
    发明申请
    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES 审中-公开

    公开(公告)号：US20190100839A1

    公开(公告)日：2019-04-04

    申请号：US16192228

    申请日：2018-11-15

    Applicant: Applied Materials, Inc.

    Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

    IPC: C23C16/455

    Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

    PLASMA CORROSION RESISTIVE HEATER FOR HIGH TEMPERATURE PROCESSING
    8.
    发明申请
    PLASMA CORROSION RESISTIVE HEATER FOR HIGH TEMPERATURE PROCESSING 审中-公开
    用于高温加工的等离子体腐蚀电阻加热器

    公开(公告)号：US20150376780A1

    公开(公告)日：2015-12-31

    申请号：US14464180

    申请日：2014-08-20

    Applicant: Applied Materials, Inc.

    Inventor： Abdul Aziz KHAJA ,  Ren-Guan DUAN ,  Amit Kumar BANSAL ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ

    IPC: C23C16/44 ,  H01L21/683 ,  H01L21/67

    CPC classification number: C23C16/4405 ,  C23C16/4581 ,  H01L21/67103 ,  H01L21/68757 ,  H01L21/68792

    Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft and a heater. The heater has a body. The body has a top surface, a side surface and a bottom surface. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius.

    Abstract translation: 本文所述的实施方案保护基板支撑件免受在高温下使用的腐蚀性清洁气体的影响。 在一个实施例中，衬底支撑件具有轴和加热器。 加热器有一个身体。 主体具有顶表面，侧表面和底表面。 顶表面构造成在衬底的等离子体处理期间支撑衬底。 为顶表面，侧表面和底表面中的至少两个提供覆盖物。 选择覆盖物以在超过约400摄氏度的温度下抵抗身体的腐蚀。

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