公开(公告)号：US20220098729A1

公开(公告)日：2022-03-31

申请号：US17034937

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Fei WU ,  Abdul Aziz KHAJA ,  Amit Kumar BANSAL ,  Tuan Anh (Mike) NGUYEN ,  Qian SUI

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  H01J37/32

Abstract: The present disclosure relates to a method for cleaning one or more chamber components having contaminants. The method includes introducing a gas mixture to a remote plasma source, the gas mixture includes argon, an oxygen-containing gas and a nitrogen-containing gas. The argon to oxygen gas ratio in the gas mixture is about 0.2:1 to about 1:1 by volume. A plasma is formed from the gas mixture in the remote plasma source. The plasma includes oxygen radicals, argon radicals, and nitrogen radicals. The plasma is introduced to a process volume of the process chamber and exposes surfaces of one or more chamber components. The process volume of the process chamber has a pressure of about 10 mTorr to about 6 Torr and a temperature above 300° C.