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    High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays
    2.
    发明授权
    High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays 有权
    用于透明薄膜晶体管和有源矩阵有机发光二极管显示器的高性能单晶N型掺杂掺杂金属氧化物纳米线

    公开(公告)号：US08524527B2

    公开(公告)日：2013-09-03

    申请号：US12891764

    申请日：2010-09-27

    申请人： Chongwu Zhou ,  PoChiang Chen

    发明人： Chongwu Zhou ,  PoChiang Chen

    IPC分类号： H01L21/00 ,  H01L21/16

    CPC分类号： H01L21/02603 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02565 ,  H01L21/02576 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/0665 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

    摘要： Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diodes (AMOLED) displays. In one implementation, a method of fabricating n-type dopant-doped metal oxide nanowires includes dispersing nanoparticle catalysts on a Si/SiO2 substrate. n-type dopant-doped metal oxide nanowires are grown on the Si/SiO2 substrate using a laser ablation process. The laser ablation process can include: placing n-type dopant at an upper stream of a furnace; placing the Si/SiO2 substrate at a down stream end of the furnace; heating the furnace; adding hydrogen to a carrier gas comprising argon and oxygen; flowing the hydrogen added carrier gas over the Si/SiO2 substrate to suppress oxidation processes and incorporate the n-type dopant into the metal oxide nanowires; and cooling the n-type dopant-doped metal oxide nanowires grown on the Si/SiO2 substrate.

    摘要翻译： 描述了用于实现用于透明电子器件的高性能砷（As）掺杂的氧化铟（In 2 O 3）纳米线的方法，材料，装置和系统，包括它们在透明薄膜晶体管（TTFT）和透明有源矩阵有机发光二极管 发光二极管（AMOLED）显示。 在一个实施方案中，制造n型掺杂掺杂金属氧化物纳米线的方法包括将纳米颗粒催化剂分散在Si / SiO 2衬底上。 使用激光烧蚀过程在Si / SiO 2衬底上生长n型掺杂剂掺杂的金属氧化物纳米线。 激光烧蚀工艺可以包括：将n型掺杂物放置在炉子的上游; 将Si / SiO 2衬底放置在熔炉的下游端; 加热炉; 向包含氩和氧的载气中加入氢; 使加氢载气流过Si / SiO 2衬底以抑制氧化过程，并将n型掺杂剂并入金属氧化物纳米线中; 并冷却在Si / SiO 2衬底上生长的n型掺杂剂掺杂的金属氧化物纳米线。

    Transparent electronics based on transfer printed carbon nanotubes on rigid and flexible substrates
    9.
    发明授权
    Transparent electronics based on transfer printed carbon nanotubes on rigid and flexible substrates 有权
    基于在刚性和柔性基底上转印碳纳米管的透明电子学

    公开(公告)号：US08847313B2

    公开(公告)日：2014-09-30

    申请号：US12538597

    申请日：2009-08-10

    申请人： Chongwu Zhou ,  Fumiaki Ishikawa ,  Hsiao-Kang Chang ,  Koungmin Ryu

    发明人： Chongwu Zhou ,  Fumiaki Ishikawa ,  Hsiao-Kang Chang ,  Koungmin Ryu

    IPC分类号： H01L27/12 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/05

    CPC分类号： H01L51/003 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

    摘要： Methods and devices for transparent electronics are disclosed. According to an embodiment, transparent electronics are provided based on transfer printed carbon nanotubes that can be disposed on both rigid and flexible substrates. Methods are provided to enable highly aligned single-walled carbon nanotubes (SWNTs) to be used in transparent electronics for achieving high carrier mobility while using low-temperature processing. According to one method, highly aligned nanotubes can be grown on a first substrate. Then, the aligned nanotubes can be transferred to a rigid or flexible substrate having pre-patterned gate electrodes. Source and drain electrodes can be formed on the transferred nanotubes. The subject devices can be integrated to provide logic gates and analog circuitry for a variety of applications.

    摘要翻译： 公开了用于透明电子器件的方法和装置。 根据一个实施例，基于可以设置在刚性和柔性基板上的转印印刷碳纳米管提供透明电子器件。 提供了使得高度对准的单壁碳纳米管（SWNT）用于透明电子学中以实现高载流子迁移率同时使用低温处理的方法。 根据一种方法，高度排列的纳米管可以在第一衬底上生长。 然后，可以将取向的纳米管转移到具有预图案化栅电极的刚性或柔性衬底。 源极和漏极可以在转移的纳米管上形成。 可以将主题装置集成以提供用于各种应用的逻辑门和模拟电路。