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    WAFER-SCALE FABRICATION OF SEPARATED CARBON NANOTUBE THIN-FILM TRANSISTORS
    1.
    发明申请
    WAFER-SCALE FABRICATION OF SEPARATED CARBON NANOTUBE THIN-FILM TRANSISTORS 审中-公开
    分离碳纳米管薄膜晶体管的尺寸制备

    公开(公告)号：US20110101302A1

    公开(公告)日：2011-05-05

    申请号：US12940674

    申请日：2010-11-05

    申请人： Chongwu Zhou ,  Chuan Wang ,  Jialu Zhang ,  Koungmin Ryu ,  Alexander Badmaev ,  Lewis Gomez De Arco

    发明人： Chongwu Zhou ,  Chuan Wang ,  Jialu Zhang ,  Koungmin Ryu ,  Alexander Badmaev ,  Lewis Gomez De Arco

    IPC分类号： H01L29/775 ,  H01L21/20 ,  H01L21/84 ,  H01L51/52 ,  B82Y40/00 ,  B82Y99/00

    CPC分类号： H01L27/3248 ,  B82Y10/00 ,  H01L27/3262 ,  H01L51/0049 ,  H01L51/0545 ,  H01L51/0562

    摘要： Methods, materials, systems and apparatus are described for depositing a separated nanotube networks, and fabricating, separated nanotube thin-film transistors and N-type separated nanotube thin-film transistors. In one aspect, a method of depositing a wafer-scale separated nanotube networks includes providing a substrate with a dielectric layer. The method includes cleaning a surface of the wafer substrate to cause the surface to become hydrophilic. The cleaned surface of the wafer substrate is functionalized by applying a solution that includes linker molecules terminated with amine groups. High density, uniform separated nanotubes are assembled over the functionalized surface by applying to the functionalized surface a separated nanotube solution that includes semiconducting nanotubes.

    摘要翻译： 描述了用于沉积分离的纳米管网络的方法，材料，系统和装置，以及制造分离的纳米管薄膜晶体管和N型分离的纳米管薄膜晶体管。 在一个方面，沉积晶片级隔离的纳米管网络的方法包括向基片提供介电层。 该方法包括清洁晶片衬底的表面以使表面变得亲水。 通过施加包含以胺基封端的连接分子的溶液来使晶片衬底的清洁表面功能化。 通过向功能化表面施加包括半导体纳米管的分离的纳米管溶液，在功能化表面上组装高密度均匀分离的纳米管。

    High Performance Field-Effect Transistors
    7.
    发明申请
    High Performance Field-Effect Transistors 有权
    高性能场效应晶体管

    公开(公告)号：US20120248416A1

    公开(公告)日：2012-10-04

    申请号：US13430457

    申请日：2012-03-26

    申请人： Chongwu Zhou ,  Alexander Badmaev ,  Chuan Wang ,  Yuchi Che

    发明人： Chongwu Zhou ,  Alexander Badmaev ,  Chuan Wang ,  Yuchi Che

    IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L21/336

    CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L29/66431 ,  H01L29/778 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0558

    摘要： A high performance field-effect transistor includes a substrate, a nanomaterial thin film disposed on the substrate, a source electrode and a drain electrode formed on the nanomaterial thin film, and a channel area defined between the source electrode and the drain electrode. A unitary self-aligned gate electrode extends from the nanomaterial thin film in the channel area between the source electrode and the drain electrode, the gate electrode having an outer dielectric layer and including a foot region and a head region, the foot region in contact with a portion of the nanomaterial thin film in the channel area. A metal layer is disposed over the source electrode, the drain electrode, the head region of the gate electrode, and portions of the nanomaterial thin film proximate the source electrode and the drain electrode in the channel area.

    摘要翻译： 高性能场效应晶体管包括基板，设置在基板上的纳米材料薄膜，形成在纳米材料薄膜上的源电极和漏极，以及限定在源电极和漏电极之间的沟道区。 单一自对准栅极电极从源电极和漏电极之间的沟道区域中的纳米材料薄膜延伸，栅电极具有外部电介质层，并且包括脚区域和头部区域，脚区域与 纳米材料薄膜在通道区域中的一部分。 金属层设置在源极电极，漏极电极，栅电极的头部区域以及纳米材料薄膜的靠近沟道区域中的源电极和漏电极的部分。

    High performance field-effect transistors
    8.
    发明授权
    High performance field-effect transistors 有权
    高性能场效应晶体管

    公开(公告)号：US08692230B2

    公开(公告)日：2014-04-08

    申请号：US13430457

    申请日：2012-03-26

    申请人： Chongwu Zhou ,  Alexander Badmaev ,  Chuan Wang ,  Yuchi Che

    发明人： Chongwu Zhou ,  Alexander Badmaev ,  Chuan Wang ,  Yuchi Che

    IPC分类号： H01L29/06 ,  H01L29/08

    CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L29/66431 ,  H01L29/778 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0558

    摘要： A high performance field-effect transistor includes a substrate, a nanomaterial thin film disposed on the substrate, a source electrode and a drain electrode formed on the nanomaterial thin film, and a channel area defined between the source electrode and the drain electrode. A unitary self-aligned gate electrode extends from the nanomaterial thin film in the channel area between the source electrode and the drain electrode, the gate electrode having an outer dielectric layer and including a foot region and a head region, the foot region in contact with a portion of the nanomaterial thin film in the channel area. A metal layer is disposed over the source electrode, the drain electrode, the head region of the gate electrode, and portions of the nanomaterial thin film proximate the source electrode and the drain electrode in the channel area.

    摘要翻译： 高性能场效应晶体管包括基板，设置在基板上的纳米材料薄膜，形成在纳米材料薄膜上的源电极和漏极，以及限定在源电极和漏电极之间的沟道区。 单一自对准栅极电极从源电极和漏电极之间的沟道区域中的纳米材料薄膜延伸，栅电极具有外部电介质层，并且包括脚区域和头部区域，脚区域与 纳米材料薄膜在通道区域中的一部分。 金属层设置在源极电极，漏极电极，栅电极的头部区域以及纳米材料薄膜的靠近沟道区域中的源电极和漏电极的部分。

    Separated Carbon Nanotube-Based Active Matrix Organic Light-Emitting Diode Displays
    10.
    发明申请
    Separated Carbon Nanotube-Based Active Matrix Organic Light-Emitting Diode Displays 审中-公开
    分离碳纳米管有源矩阵有机发光二极管显示器

    公开(公告)号：US20140070169A1

    公开(公告)日：2014-03-13

    申请号：US14025511

    申请日：2013-09-12

    申请人： Chongwu Zhou ,  Jialu Zhang ,  Chuan Wang ,  Yue Fu

    发明人： Chongwu Zhou ,  Jialu Zhang ,  Chuan Wang ,  Yue Fu

    IPC分类号： H01L27/32

    CPC分类号： H01L27/3274 ,  B82Y15/00 ,  B82Y30/00 ,  H01L51/0048 ,  H01L51/0545

    摘要： A separated carbon nanotube-based active matrix organic light-emitting diode (AMOLED) device including a substrate and transistors. Each transistor includes an individual back gate patterned on the substrate and a gate dielectric layer disposed over the substrate. An active channel including a network of separated semiconducting nanotubes is disposed over a functionalized surface of the gate dielectric layer. A source contact and a drain contact are formed on two ends of the active channel, with the network of separated nanotubes between the source contact and the drain contact. An organic light-emitting diode (OLED) display device is coupled to the drain of one of the transistors. A system includes a display control circuit having a substrate, with scan lines, data lines, and AMOLED devices formed on the substrate, with each AMOLED device coupled to one of the scan lines and one of the data lines.

    摘要翻译： 一种分离的基于碳纳米管的有源矩阵有机发光二极管（AMOLED）器件，包括衬底和晶体管。 每个晶体管包括在衬底上图案化的单个背栅和设置在衬底上的栅介质层。 包括分离的半导体纳米管的网络的有源沟道被布置在栅极电介质层的功能化表面上。 源极触点和漏极触点形成在有源沟道的两端，分离的纳米管网络在源极触点和漏极触点之间。 有机发光二极管（OLED）显示装置耦合到晶体管之一的漏极。 一种系统包括具有衬底的显示控制电路，其中形成有衬底上的扫描线，数据线和AMOLED器件，每个AMOLED器件耦合到扫描线之一和数据线之一。