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公开(公告)号:US20240363803A1
公开(公告)日:2024-10-31
申请号:US18766027
申请日:2024-07-08
发明人: Dae Hyun KIM , Jong Hyuk KANG , Joo Yeol LEE , Hyun Deok IM , Chi O CHO , Hyun Min CHO
IPC分类号: H01L33/24 , G09G3/32 , H01L25/075 , H01L27/12 , H01L27/15 , H01L33/00 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/44
CPC分类号: H01L33/24 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/16 , H01L33/325 , H01L33/38 , H01L33/44 , G09G3/32 , G09G2300/0452 , G09G2310/0278 , H01L25/0753 , H01L27/1214 , H01L2224/95085 , H01L2933/0016 , H01L2933/0025
摘要: A light emitting device including first and second electrodes spaced apart from each other on a substrate, at least one bar-type LED having a first end on the first electrode and a second end on the second electrode, and an insulative support body between the substrate and the bar-type LED. The at least one bar-type LED has a length greater than a width.
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公开(公告)号:US20240363675A1
公开(公告)日:2024-10-31
申请号:US18767003
申请日:2024-07-09
发明人: Jong Hyeon CHAE , Seong Gyu JANG , Ho Joon LEE , Chang Yeon KIM , Chung Hoon LEE
IPC分类号: H01L27/15 , H01L25/065 , H01L25/075 , H01L25/11 , H01L25/13 , H01L33/00 , H01L33/10 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/50 , H01L33/62 , H10K10/84 , H10K50/813 , H10K50/818 , H10K50/822 , H10K50/828 , H10K59/32 , H10K59/35
CPC分类号: H01L27/156 , H01L25/0756 , H01L25/13 , H01L33/0093 , H01L33/10 , H01L33/405 , H01L33/42 , H01L33/507 , H01L33/62 , H01L25/0655 , H01L25/0753 , H01L25/115 , H01L33/38 , H01L33/382 , H10K10/84 , H10K50/813 , H10K50/818 , H10K50/822 , H10K50/828 , H10K59/32 , H10K59/35
摘要: A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.
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公开(公告)号:US20240363673A1
公开(公告)日:2024-10-31
申请号:US18766483
申请日:2024-07-08
发明人: Seong Jin LEE , Jong Kook LEE
IPC分类号: H01L27/15 , F21K9/235 , F21Y113/13 , F21Y115/10 , H01L33/50
CPC分类号: H01L27/153 , F21K9/235 , H01L33/502 , F21Y2113/13 , F21Y2115/10
摘要: A light emitting device, comprising a substrate, a first emitter disposed on the substrate and comprising a first LED array including at least one first LED chip, a second emitter disposed on the substrate and comprising a second LED array including at least one second LED chip, and a resistor disposed on the substrate, the resistor being connected in series to the first emitter and connected in parallel to the second emitter, wherein the second emitter is connected in parallel to the first emitter and the resistor, and the first emitter and the second emitter emit light having different color temperatures, and wherein a ratio of a resistance offered by the first emitter and the resistor to a resistance offered by the second emitter is changed as a power change according to the dimming signal.
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公开(公告)号:US12132140B2
公开(公告)日:2024-10-29
申请号:US17476993
申请日:2021-09-16
发明人: Hyo Jin Ko , Duk Ki Kim , Yong Hwi Kim , Jun Bo Sim , Na Mi Hong , Jong Hyuk Kang , Gyu Bong Kim , Hoi Lim Kim , Sae Na Yun , Chang Hee Lee , Hyun Deok Im , Eun A Cho , Jae Kook Ha
IPC分类号: H01L33/00 , B82B3/00 , C09D11/033 , C09D11/50 , C09D11/52 , H01L27/15 , H01L33/24 , H01L33/38 , H01L33/44
CPC分类号: H01L33/005 , B82B3/0052 , C09D11/033 , C09D11/50 , C09D11/52 , H01L27/156 , H01L33/24 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要: An ink includes a solvent, and light-emitting elements dispersed in the solvent, each of the light-emitting elements comprising semiconductor layers and an insulating film partially surrounding outer surfaces of the semiconductor layers, wherein the solvent has Hansen solubility parameters of a polarity parameter between about 4 and about 9 and a hydrogen bonding parameter between about 6 and about 11.
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公开(公告)号:US20240355968A1
公开(公告)日:2024-10-24
申请号:US18631818
申请日:2024-04-10
发明人: Koichi GOSHONOO
CPC分类号: H01L33/32 , H01L27/156 , H01L33/507 , H01L33/58 , H01L33/62
摘要: A flip-chip type light emitting element includes: an n-layer made containing a group III nitride semiconductor; an active layer containing a group III nitride semiconductor provided over the n-layer; a p-layer containing a group III nitride semiconductor provided over the active layer; a groove provided at a partial region of the p-layer and having a depth reaching the n-layer; an n-electrode provided over the n-layer exposed at a bottom surface of the groove; a p-electrode provided over the p-layer; and a conductive film provided at a surface of the n-layer opposite to a side in which the active layer is provided and having a region through which light from the active layer is transmitted.
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公开(公告)号:US12125946B2
公开(公告)日:2024-10-22
申请号:US17664577
申请日:2022-05-23
发明人: Petar Atanackovic
IPC分类号: H01L33/26 , H01L21/02 , H01L23/66 , H01L27/15 , H01L29/15 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/51 , H01L29/66 , H01L29/778 , H01L29/786 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34
CPC分类号: H01L33/26 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/02458 , H01L21/02507 , H01L23/66 , H01L27/15 , H01L29/151 , H01L29/2003 , H01L29/24 , H01L29/267 , H01L29/517 , H01L29/66462 , H01L29/7869 , H01L33/002 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34 , H01L29/778 , H01L29/7786 , H01L2223/6627
摘要: The present disclosure describes methods and epitaxial oxide devices with impact ionization. A method can comprise: applying a bias across a semiconductor structure using a first electrical contact and a second electrical contact; injecting a hot electron, from the first electrical contact, through a second semiconductor layer, and into a conduction band of a first epitaxial oxide material; and forming an excess electron-hole pair in an impact ionization region of the first semiconductor layer via impact ionization. The semiconductor structure can comprise: the first electrical contact; the first semiconductor layer with the first epitaxial oxide material with a first bandgap coupled to the first electrical contact; a second semiconductor layer with a second epitaxial oxide material with a second bandgap coupled to the first semiconductor layer; and a second electrical contact coupled to the second semiconductor layer, wherein the second bandgap is wider than the first bandgap.
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公开(公告)号:US12125869B2
公开(公告)日:2024-10-22
申请号:US17542720
申请日:2021-12-06
发明人: Kiwon Park , Geunwoo Ko , Inho Kim , Sungwook Lee , Jonghyun Lee , Byungchul Choi
IPC分类号: H01L27/15
CPC分类号: H01L27/156
摘要: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a plurality of light emitting structures, each of which includes a first surface and a second surface, a plurality of embossed portions provided on the first surface; a partition wall structure provided on the first surface of the plurality of light emitting structures and including a plurality of partition walls which define a plurality of pixel spaces; and a fluorescent layer provided in the plurality of pixel spaces. A bottom surface of the partition wall structure contacts the plurality of embossed portions.
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公开(公告)号:US12119427B2
公开(公告)日:2024-10-15
申请号:US18336040
申请日:2023-06-16
发明人: Jih-Kang Chen , Shih-Wei Yang , Tsai-Chen Sung
CPC分类号: H01L33/382 , H01L27/156 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要: The light emitting device includes a growth substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the growth substrate from top to bottom. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars. The second electrode is electrically connected to the conductive pillar.
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公开(公告)号:US12119371B2
公开(公告)日:2024-10-15
申请号:US17754825
申请日:2020-10-22
发明人: Hiizu Ohtorii , Hiroshi Morita , Yusuke Oyama , Eiji Otani , Ken Kikuchi
CPC分类号: H01L27/156 , H01L33/58 , H01L33/64 , H05K1/028 , H05K1/0281 , H05K1/189 , H05K2201/10121 , H05K2201/10151
摘要: The present technology relates to a light source apparatus that makes it possible to provide a widely applicable light source apparatus. A light source apparatus includes a transmissive board that transmits light emitted by a light-emitting element, a circuit board that drives the light-emitting element and is joined to the transmissive board, and a light-emitting board that has the light-emitting element and is connected to the circuit board via a first bump. Further, in the light source apparatus, the circuit board and an organic board are configured to be connected by sandwiching the light-emitting board via second bumps. The present technology can be applied to a light source apparatus that emits light.
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公开(公告)号:US12119369B2
公开(公告)日:2024-10-15
申请号:US17469238
申请日:2021-09-08
发明人: Seul Ki Kim , Seon Beom Ji , Tae Ha Jin , Dong Hwan Kim
CPC分类号: H01L27/156 , H01L33/24 , H01L33/38 , H01L33/44
摘要: A display device includes a light emitting area, a non-light emitting area surrounding the light emitting area, and a separation area spaced apart from the light emitting area, the non-light emitting area disposed between the light emitting area and the separation area; a bank disposed in the non-light emitting area; a first alignment electrode and a second alignment electrode that extend from the light emitting area through the non-light emitting area to the separation area; light emitting elements electrically connected to at least one of the first alignment electrode and the second alignment electrode; a first contact electrode disposed in the separation area and electrically connected to the first alignment electrode; and a second contact electrode disposed in the separation area and electrically connected to the second alignment electrode.
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