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Patent Agency Ranking
公开(公告)号：US12040349B2
公开(公告)日：2024-07-16
申请号：US17575088
申请日：2022-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiwon Park , Hyunsoo Kim , Jinsu Park , Suyeol Lee , Shiyoung Lee , Chiyoon Lee
CPC classification number: H01L27/156 , H01L24/02 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L2224/02381 , H01L2224/0239 , H01L2224/05554 , H01L2224/05569 , H01L2224/05573 , H01L2224/06153 , H01L2224/06155 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48105 , H01L2224/48228 , H01L2924/182
Abstract: A light emitting device includes a printed circuit board (PCB) including a connection pad, a base substrate mounted on the PCB and including a pixel region and a pad region, light emitting structures arranged on the pixel region, a barrier rib structure disposed on the pixel region and disposed at a vertical level different from the light emitting structures, the barrier rib structure including barrier ribs connected with each other to define each of pixel spaces, a phosphor layer filling each pixel space, a dam structure surrounding the barrier rib structure, a pad disposed on the pad region and adjacent to at least one side of an outer boundary of the light emitting structures, a bonding wire connecting the connection pad to the pad, and a molding structure covering the pad, the connection pad, the bonding wire, and at least a portion of the dam structure.
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公开(公告)号：US12125869B2
公开(公告)日：2024-10-22
申请号：US17542720
申请日：2021-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kiwon Park , Geunwoo Ko , Inho Kim , Sungwook Lee , Jonghyun Lee , Byungchul Choi
IPC: H01L27/15
CPC classification number: H01L27/156
Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a plurality of light emitting structures, each of which includes a first surface and a second surface, a plurality of embossed portions provided on the first surface; a partition wall structure provided on the first surface of the plurality of light emitting structures and including a plurality of partition walls which define a plurality of pixel spaces; and a fluorescent layer provided in the plurality of pixel spaces. A bottom surface of the partition wall structure contacts the plurality of embossed portions.
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公开(公告)号：US11264532B2
公开(公告)日：2022-03-01
申请号：US16727496
申请日：2019-12-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Daeyeop Han , Kiwon Park , Jaeyoon Kim , Sungjoon Kim , Inho Kim
IPC: H01L33/00 , H01L25/075
Abstract: Provided a manufacturing method of a semiconductor light emitting device including forming a plurality of light emitting cells that are separated on a first substrate, forming a first planarization layer by providing an insulating material on the plurality of light emitting cells, forming a second planarization layer by providing a photoresist on the first planarization layer to have a flat upper surface, and soft baking the photoresist, and dry etching the second planarization layer to a predetermined depth to expose a portion of the first planarization layer provided on the plurality of light emitting cells, and a portion of the second planarization layer remaining between the plurality of light emitting cells on the first planarization layer, wherein forming the second planarization layer and dry etching are repeated at least once to remove the portion of the second planarization layer provided between the plurality of light emitting cells.
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公开(公告)号：US11646398B2
公开(公告)日：2023-05-09
申请号：US17323042
申请日：2021-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kiwon Park , Namsung Kim , Youngsub Shin , Jonghyun Lee , Daemyung Chun , Byungchul Choi
CPC classification number: H01L33/505 , H01L27/15 , H01L33/007 , H01L33/0093 , H01L33/382 , H01L33/46 , H01L2933/0016 , H01L2933/0025 , H01L2933/0041
Abstract: A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.
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公开(公告)号：US20220310694A1
公开(公告)日：2022-09-29
申请号：US17575088
申请日：2022-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiwon Park , Hyunsoo Kim , Jinsu Park , Suyeol Lee , Shiyoung Lee , Chiyoon Lee
IPC: H01L27/15
Abstract: A light emitting device includes a printed circuit board (PCB) including a connection pad, a base substrate mounted on the PCB and including a pixel region and a pad region, light emitting structures arranged on the pixel region, a barrier rib structure disposed on the pixel region and disposed at a vertical level different from the light emitting structures, the barrier rib structure including barrier ribs connected with each other to define each of pixel spaces, a phosphor layer filling each pixel space, a dam structure surrounding the barrier rib structure, a pad disposed on the pad region and adjacent to at least one side of an outer boundary of the light emitting structures, a bonding wire connecting the connection pad to the pad, and a molding structure covering the pad, the connection pad, the bonding wire, and at least a portion of the dam structure.
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