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21 条记录 (耗时 0.021 秒)

    Method of fabricating semiconductor device
    3.
    发明授权
    Method of fabricating semiconductor device 有权

    公开(公告)号：US11923298B2

    公开(公告)日：2024-03-05

    申请号：US17830811

    申请日：2022-06-02

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hyun-Seung Song ,  Kwang-Young Lee ,  Jonghyun Lee

    IPC分类号： H01L23/528 ,  H01L21/768 ,  H10B10/00 ,  H01L29/78

    CPC分类号： H01L23/528 ,  H01L21/76802 ,  H01L21/76834 ,  H10B10/12 ,  H01L21/76843 ,  H01L29/785

    摘要： A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

    Display device for low power driving and method of operating the same
    5.
    发明授权
    Display device for low power driving and method of operating the same 有权

    公开(公告)号：US12080232B2

    公开(公告)日：2024-09-03

    申请号：US18201845

    申请日：2023-05-25

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jonghyun Lee ,  Jongoh Lee ,  Yuneseok Chung ,  Hyeokman Kwon

    IPC分类号： G09G3/3225

    CPC分类号： G09G3/3225 ,  G09G2300/0809 ,  G09G2310/06 ,  G09G2310/08

    摘要： A display device includes a display panel, a display driver integrated circuit and a driving control circuit. The display panel includes a plurality of pixels connected to a plurality of driving lines and a plurality of source lines. The display driver integrated circuit includes a driving control signal generator. The driving control signal generator generates a driving control signal based on display device information and pixel values corresponding to at least a portion of the plurality of rows among a plurality of previous pixel values of a previous frame and a plurality of present pixel values of a present frame. The driving control circuit selectively connects the display driver integrated circuit with each of the plurality of driving lines based on the driving control signal such that first driving signals provided to first driving lines among the plurality of driving lines are blocked.

    Semiconductor light emitting device
    7.
    发明授权
    Semiconductor light emitting device 有权

    公开(公告)号：US11646398B2

    公开(公告)日：2023-05-09

    申请号：US17323042

    申请日：2021-05-18

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Kiwon Park ,  Namsung Kim ,  Youngsub Shin ,  Jonghyun Lee ,  Daemyung Chun ,  Byungchul Choi

    IPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/38 ,  H01L27/15 ,  H01L33/00

    CPC分类号： H01L33/505 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/382 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041

    摘要： A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

    Semiconductor device and method of fabricating the same
    8.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US11355434B2

    公开(公告)日：2022-06-07

    申请号：US17016977

    申请日：2020-09-10

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hyun-Seung Song ,  Kwang-Young Lee ,  Jonghyun Lee

    IPC分类号： H01L23/528 ,  H01L27/11 ,  H01L21/768 ,  H01L29/78

    摘要： A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

    Apparatus for treating a substrate
    9.
    发明授权
    Apparatus for treating a substrate 有权

    公开(公告)号：US10665483B2

    公开(公告)日：2020-05-26

    申请号：US15250186

    申请日：2016-08-29

    申请人： Samsung Electronics Co., Ltd.

    发明人： Gi-Nam Park ,  Bokyung Jung ,  Leekwon Gil ,  Jungwoo Seo ,  Dongseok Baek ,  Nam Hoon Lee ,  Jonghyun Lee

    IPC分类号： H01L21/67 ,  H01L21/687 ,  H05B3/00

    摘要： An apparatus for treating a substrate includes a chamber including a space in which a substrate is treated, a support member disposed in the chamber and supporting the substrate, and a heating member for heating the substrate. The space is divided into an upper space and a lower space by the support member. The support member includes a support plate receiving the substrate, a base supporting the support plate, exposing a bottom surface of the support plate and including a cut region formed in an edge portion of the base, and an adjustment block held in the cut region and coupled to the base. The cut region fluidly connects the upper space to the lower space. The adjustment block divides the cut region into a plurality of vents.