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    Optimizing Image Distortion in a Multi Beam Charged Particle Processing Apparatus
    2.
    发明公开
    Optimizing Image Distortion in a Multi Beam Charged Particle Processing Apparatus 审中-公开

    公开(公告)号：US20240304413A1

    公开(公告)日：2024-09-12

    申请号：US18597676

    申请日：2024-03-06

    申请人： IMS Nanofabrication GmbH

    发明人： Christoph Spengler ,  Michael Haberler

    IPC分类号： H01J37/304 ,  H01J37/04 ,  H01J37/153 ,  H01J37/22 ,  H01J37/302 ,  H01J37/317

    CPC分类号： H01J37/304 ,  H01J37/045 ,  H01J37/153 ,  H01J37/222 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31777

    摘要： The invention proposes adjusting the optical imaging system of a charged-particle multi-beam processing apparatus with regard to spatial and angular image distortion of the beam field, which describes the deviation of landing positions and landing angles of beamlets from respective nominal values within the beam field. Starting from a determination of the image distortion, so-called fingerprints are determined, which represent the change of image distortion effected by a unit change of a respective operating parameter of a component of the projection optics; then values of operating parameters are obtained which optimize a corrected distortion obtained from a superposition of the image distortion and a change of operating parameters that causes a variation of the image distortion, as expressed by a linear combination of said fingerprints. The optimizing values thus obtained are applied to the respective optical elements of the projection optics. The procedure may suitable be iterated until the distortion is suitably optimized.

    OPERATING A PARTICLE BEAM APPARATUS
    3.
    发明公开
    OPERATING A PARTICLE BEAM APPARATUS 审中-公开

    公开(公告)号：US20240274397A1

    公开(公告)日：2024-08-15

    申请号：US18509372

    申请日：2023-11-15

    申请人： Carl Zeiss Microscopy GmbH

    发明人： Sebastian Schaedler

    IPC分类号： H01J37/147 ,  H01J37/302 ,  H01J37/305

    CPC分类号： H01J37/1474 ,  H01J37/3023 ,  H01J37/3053

    摘要： Operating a particle beam apparatus includes processing, imaging, and/or analyzing an object. When guiding the particle beam along first dwell regions of a first scan line, the particle beam remains at each of the first dwell regions for a first dwell time. When guiding the particle beam along second dwell regions of a second scan line, the particle beam remains at each of the second dwell regions for a second dwell time. The first dwell time is shorter than the second dwell time. Alternatively, a first region of the first dwell regions has a first spacing with respect to a closest arranged adjacent second region of the first dwell regions. A first region of the second dwell regions has a second spacing with respect to a closest arranged adjacent second region of the second dwell regions. The second spacing is smaller than the first spacing.

    Waveform generating device, waveform generating method, and charged particle beam irradiation apparatus
    4.
    发明授权
    Waveform generating device, waveform generating method, and charged particle beam irradiation apparatus 有权

    公开(公告)号：US11837436B2

    公开(公告)日：2023-12-05

    申请号：US17646067

    申请日：2021-12-27

    申请人： NuFlare Technology, Inc.

    发明人： Michihiko Ikeda ,  Akinori Mine ,  Kuniaki Kawahara

    IPC分类号： H01J37/302 ,  H03M1/06 ,  H01J37/147

    CPC分类号： H01J37/302 ,  H01J37/147 ,  H03M1/0604

    摘要： In one embodiment, a waveform generating device includes a first DA converter converting input data, a controller outputting a first signal having a command value based on the input data, and a second signal having a command value differing by a constant value from the first signal, a second DA converter converting the first signal, a third DA converter converting the second signal, and a combiner combining the output of the first DA converter, the output of the second DA converter, and the output of the third DA converter. When a value of a predetermined first high-order bit of the input data is inverted, the controller changes the command value of the first signal such that a value of the first high-order bit or a second high-order bit different from the first high-order bit is inverted.

    Procedural electron beam lithography
    6.
    发明授权
    Procedural electron beam lithography 有权

    公开(公告)号：US11664194B2

    公开(公告)日：2023-05-30

    申请号：US17183090

    申请日：2021-02-23

    申请人： Magic Leap, Inc.

    发明人： Victor Kai Liu ,  Mauro Melli

    IPC分类号： H01J37/317 ,  H01J37/302

    CPC分类号： H01J37/3174 ,  H01J37/3026

    摘要： A Procedural EBL system implements a user-provided oracle function (e.g., associated with a specific pattern) to generate control instructions for electron beam drive electronics in an on-demand basis. A control system may invoke the oracle function to query the pattern at individual point locations (e.g., individual x,y locations), and/or it may query the pattern over an area corresponding to a current field being addressed by the beam and stage positioner, for example. This Procedural EBL configuration manages control and pattern generation so that the low-level drive electronics and beam column may remain unchanged, allowing it to leverage existing EBL technologies.

    ANALYZING A SIDEWALL OF HOLE MILLED IN A SAMPLE TO DETERMINE THICKNESS OF A BURIED LAYER
    7.
    发明申请
    ANALYZING A SIDEWALL OF HOLE MILLED IN A SAMPLE TO DETERMINE THICKNESS OF A BURIED LAYER 有权

    公开(公告)号：US20230057148A1

    公开(公告)日：2023-02-23

    申请号：US17408876

    申请日：2021-08-23

    申请人： Applied Materials Israel Ltd.

    发明人： Ilya Blayvas ,  Yehuda Zur

    IPC分类号： H01J37/302 ,  H01L21/66 ,  H01J37/28 ,  H01J37/305

    摘要： Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

    Charged particle beam device
    10.
    发明授权
    Charged particle beam device 有权

    公开(公告)号：US11545334B2

    公开(公告)日：2023-01-03

    申请号：US17262422

    申请日：2018-08-02

    申请人： Hitachi High-Tech Corporation

    发明人： Ryo Komatsuzaki

    IPC分类号： H01J37/20 ,  H01J37/22 ,  H01J37/244 ,  H01J37/302

    摘要： The invention provides a charged particle beam device that can accurately move a convergence point of a charged particle beam to a surface of a sample and facilitates a user to grasp a positional relation between the surface of the sample and the convergence point of the charged particle beam. The charged particle beam device according to the invention includes: an electron optics system configured to irradiate a sample table with a charged particle beam; a movable stage on which the sample table is to be placed; a sample chamber that accommodates the movable stage; a detector configured to detect a signal from a sample placed on the sample table; a camera configured to capture an image of the sample table and the sample; an extraction means configured to extract outer shape information relating to outer shapes of the sample table and the sample from the image captured by the camera; a control unit configured to control the movable stage based on the outer shape information; and a display unit configured to display an image relating to the outer shape information together with the image captured by the camera.