公开(公告)号：US12222653B2

公开(公告)日：2025-02-11

申请号：US17320754

申请日：2021-05-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming-Hui Weng ,  An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin ,  Chen-Yu Liu

IPC: G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3115

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C6-C7 cyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.

公开(公告)号：US12222651B2

公开(公告)日：2025-02-11

申请号：US16964869

申请日：2019-02-01

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi Endo ,  Yuichi Goto ,  Yasunobu Someya ,  Ryuta Mizuochi ,  Satoshi Kamibayashi

IPC: G03F7/11 ,  C09D179/04 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30

Abstract: A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.

公开(公告)号：US20240355644A1

公开(公告)日：2024-10-24

申请号：US18640443

申请日：2024-04-19

Applicant: Tokyo Electron Limited

Inventor： Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Yoji SAKATA ,  Tomoya ONITSUKA ,  Naoki SHIBATA

IPC: H01L21/67 ,  G03F7/00 ,  G03F7/004 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  H01L21/677

CPC classification number: H01L21/67017 ,  G03F7/0042 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70866 ,  G03F7/70933 ,  G03F7/70991 ,  H01L21/67225 ,  H01L21/67769 ,  H01L21/67778

Abstract: A substrate processing system provided with a plurality of apparatuses to perform a patterning on a plurality of the substrates, wherein a transfer container accommodating the plurality of substrates is transferred to the plurality of apparatuses in a sequential manner. The substrate processing system includes: a first apparatus of the plurality of apparatuses, which is configured to form a metal-containing resist film on each substrate; a second apparatus of the plurality of apparatuses, which is configured to perform a development on the metal-containing resist film after exposure; and an atmosphere regulator having an accommodation space where the substrates, on each of which the metal-containing resist film before being subjected to the development is formed, are accommodated and configured to regulate an atmosphere of the accommodation space so as to regulate a degree of progress of a reaction of the metal-containing resist film on each substrate.

公开(公告)号：US20240297036A1

公开(公告)日：2024-09-05

申请号：US18634408

申请日：2024-04-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： An-Ren ZI ,  Ching-Yu CHANG

IPC: H01L21/02 ,  C11D1/02 ,  C11D1/66 ,  C11D1/72 ,  C11D3/43 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/42 ,  H01L21/027 ,  H01L21/308

CPC classification number: H01L21/02057 ,  C11D1/02 ,  C11D1/66 ,  C11D1/72 ,  C11D3/43 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/0274 ,  H01L21/308 ,  C11D2111/22 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/422

Abstract: A cleaning solution includes a solvent having Hansen solubility parameters: 25>δd>13, 25>δp>3, 30>δh>4; an acid having an acid dissociation constant pKa: −11 pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from




R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from —OH, ═O, —S—, —P—, —P(O2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, —SO2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO3NH—, and SO2NH.

公开(公告)号：US12078932B2

公开(公告)日：2024-09-03

申请号：US17050112

申请日：2019-04-23

Applicant: XEIKON PREPRESS N.V.

Inventor： Bart Wattyn

IPC: B41N3/00 ,  B41C1/02 ,  G03F7/26 ,  G03F7/30

CPC classification number: G03F7/3064 ,  B41C1/02 ,  B41N3/00 ,  B41N3/006 ,  G03F7/26

Abstract: An apparatus for treating a relief plate precursor, such as a printing plate precursor, preferably with a liquid. The apparatus includes a transport system with at least one, preferably at least two transport bars; a plate coupling station configured for coupling a relief plate precursor to the transport bar; a treatment compartment configured for treating the relief plate precursor; and a plate decoupling station configured for decoupling the treated relief plate precursor from the transport bar. The transport system is configured to automatically move each transport bar, after being coupled to a relief plate precursor in the plate coupling station, from the plate coupling station through the treatment station to the plate decoupling station, and, after being decoupled from a treated relief plate precursor, from the plate decoupling station back to the plate coupling station, such that the transport bar moves in a closed loop through the apparatus.

公开(公告)号：US12032292B2

公开(公告)日：2024-07-09

申请号：US17055264

申请日：2019-05-09

Applicant: Showa Denko Materials Co., Ltd. ,  KIMOTO CO., LTD.

Inventor： Hideki Etori ,  Keiko Kitamura ,  Yoshiaki Fuse ,  Nobuhito Komuro

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/30 ,  H05K3/00

CPC classification number: G03F7/092 ,  G03F7/30 ,  H05K3/0076

Abstract: A photosensitive film of the present invention includes a carrier film having a first surface whose surface roughness is 0.1 to 0.4 μm, and a photosensitive layer formed on the first surface, in which a haze of the carrier film is 30 to 65%, and a spectral haze at a wavelength of 405 nm of the carrier film, as measured by providing a transparent resin layer in which a difference between a refractive index of the transparent resin layer and a refractive index of the photosensitive layer is within ±0.02 on the first surface, is 0.1 to 9.0%.

公开(公告)号：US11994799B2

公开(公告)日：2024-05-28

申请号：US17864748

申请日：2022-07-14

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama

IPC: G03F7/004 ,  C07C303/32 ,  C07C309/06 ,  C07C309/10 ,  C07C309/12 ,  C07C309/13 ,  C07C381/12 ,  G03F7/027 ,  G03F7/029 ,  G03F7/033 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/0045 ,  C07C303/32 ,  C07C309/06 ,  C07C309/10 ,  C07C309/12 ,  C07C309/13 ,  C07C381/12 ,  G03F7/0048 ,  G03F7/027 ,  G03F7/029 ,  G03F7/033 ,  G03F7/0382 ,  G03F7/2006 ,  G03F7/30

Abstract: A negative resist composition is provided comprising a base polymer and an acid generator in the form of a sulfonium salt consisting of a sulfonate anion having a maleimide group and a cation having a polymerizable double bond. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

公开(公告)号：US20240134274A1

公开(公告)日：2024-04-25

申请号：US18546879

申请日：2022-01-28

Applicant: Lam Research Corporation

Inventor： Timothy William Weidman ,  Eric Calvin Hansen ,  Chenghao Wu

IPC: G03F7/004 ,  G03F7/095 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

CPC classification number: G03F7/0043 ,  G03F7/095 ,  G03F7/167 ,  G03F7/2006 ,  G03F7/30 ,  G03F7/36

Abstract: The present disclosure relates to a composition formed with a precursor including a C1-4 haloaliphatic or C1-4 aliphatic group or vinyl group (—CH═CH2) and other unsaturated substituents, as well as methods for forming and employing such compositions. In particular embodiments, the haloaliphatic group is a C1-2 haloalkyl group, which in turn provides a resist film having enhanced radiation absorptivity and/or minimal film shrinkage (e.g., upon radiation exposure and/or post-exposure bake). In other embodiments, the aliphatic group is a C1-2 alkyl or vinyl group and other unsaturated substituents, which can be dry deposited. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

公开(公告)号：US11960206B2

公开(公告)日：2024-04-16

申请号：US18075594

申请日：2022-12-06

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Emad Aqad ,  William Williams, III ,  James F. Cameron

IPC: G03F7/004 ,  C07C25/18 ,  C07C255/24 ,  C07C255/31 ,  C07C255/34 ,  C07C321/28 ,  C07C381/12 ,  G03F7/038 ,  G03F7/039 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C255/24 ,  C07C255/31 ,  C07C255/34 ,  C07C321/28 ,  C07C381/12 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  C07C2602/08 ,  C07C2603/74

Abstract: A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I):




wherein, EWG, Y, R, and M+ are the same as described in the specification.

公开(公告)号：US11947261B2

公开(公告)日：2024-04-02

申请号：US17150220

申请日：2021-01-15

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Mo Chen ,  Qun-Qing Li ,  Li-Hui Zhang ,  Yuan-Hao Jin ,  Dong An ,  Shou-Shan Fan

IPC: G03F1/50 ,  G03F1/00 ,  G03F1/48 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/20 ,  G03F1/00 ,  G03F1/48 ,  G03F1/50 ,  G03F7/30

Abstract: A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.