公开(公告)号：US12222651B2

公开(公告)日：2025-02-11

申请号：US16964869

申请日：2019-02-01

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi Endo ,  Yuichi Goto ,  Yasunobu Someya ,  Ryuta Mizuochi ,  Satoshi Kamibayashi

IPC: G03F7/11 ,  C09D179/04 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30

Abstract: A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.

公开(公告)号：US12025915B2

公开(公告)日：2024-07-02

申请号：US16483686

申请日：2018-02-01

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Tokio Nishita ,  Yuichi Goto ,  Rikimaru Sakamoto ,  Gun Son

IPC: G03F7/11 ,  C08F220/22 ,  C08F220/34 ,  G03F7/20

CPC classification number: G03F7/11 ,  C08F220/22 ,  C08F220/34 ,  G03F7/2053 ,  C08F220/346

Abstract: A resist underlayer film-forming composition having a dramatically improved crosslinking ability over conventional compositions, and further, a resist underlayer film-forming composition that crosslinks with a component of a resist material, in order to improve the adhesion of a resist underlayer film to a resist pattern. A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of formula (1) and a structural unit of formula (2):




(wherein each R1 is independently a hydrogen atom or a methyl group; each R2 is independently a C1-3 alkylene group; R3 is a single bond or a methylene group; A is a linear, branched, or cyclic aliphatic group having a carbon atom number of 1 to 12 and optionally having a substituent, or a C6-16 aromatic or heterocyclic group optionally having a substituent; and Pr is a protecting group); a crosslinking agent; an organic acid catalyst; and a solvent.

公开(公告)号：US12227621B2

公开(公告)日：2025-02-18

申请号：US17288665

申请日：2019-10-25

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru Shibayama ,  Yuichi Goto ,  Shun Kubodera ,  Satoshi Takeda ,  Ken Ishibashi ,  Makoto Nakajima

IPC: H01L21/027 ,  C08G77/26 ,  H01L21/308

Abstract: A film-forming composition suitable as a resist underlayer film-forming composition from which a resist underlayer film having not only a good EUV resist adhesivity but also a good etching processability due to a high fluorine-based etching rate.
For example, a film-forming composition includes a polymer represented by Formula (E1) and a solvent.

公开(公告)号：US10676491B1

公开(公告)日：2020-06-09

申请号：US16627700

申请日：2018-05-29

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Shun Kubodera ,  Yuichi Goto ,  Wataru Shibayama ,  Gun Son

IPC: C07F7/18

Abstract: There is provided a novel isocyanuric acid derivative having two alkoxyalkyl groups and having a trialkoxysilyl group introduced therein, and a method for producing the isocyanuric acid derivative.An isocyanuric acid derivative of formula (1): wherein R1 is a methyl group or an ethyl group; two R2s are each a C1-2 alkylene group; and two R3s are each a methyl group, an ethyl group, or a C2-4 alkoxyalkyl group, which may be liquid at ambient temperature and ambient pressure.

公开(公告)号：US10676463B2

公开(公告)日：2020-06-09

申请号：US16091770

申请日：2017-03-24

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Yuichi Goto ,  Masahisa Endo ,  Gun Son

IPC: C07D405/06 ,  C07D251/34

Abstract: There are provided a novel isocyanurate compound having a glycidyl group as a substituent to be bonded to a nitrogen atom. A monoglycidyl isocyanurate compound of the following Formula (1), (2), or (3). (wherein two R1s are each a C2-10 alkyl group, two R2s are each a C1-5 alkylene group, two R3s are each a C1-2 alkyl group, two R4s are each a C1-2 alkylene group, and two R5s are each a C1-2 alkyl group).