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    Laser treatment device, laser treatment method, and semiconductor device fabrication method
    4.
    发明授权
    Laser treatment device, laser treatment method, and semiconductor device fabrication method 有权
    激光治疗装置，激光治疗方法和半导体器件制造方法

    公开(公告)号：US07112517B2

    公开(公告)日：2006-09-26

    申请号：US10237173

    申请日：2002-09-09

    申请人： Koichiro Tanaka ,  Tomoaki Moriwaka

    发明人： Koichiro Tanaka ,  Tomoaki Moriwaka

    IPC分类号： H01I21/36 ,  H01I21/00

    CPC分类号： H01L21/02683 ,  B23K26/0648 ,  B23K26/0738 ,  B23K26/082 ,  G02F1/1303 ,  G02F1/1368 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757

    摘要： Object of the InventionTo obtain thin film transistors with controlled characteristics on a substrate.MeansA semiconductor film formed on a substrate is crystallized by continuously oscillating type laser. The scanning direction of the continuously oscillating type laser and the crystallization direction are coincident with each other. Adjustment of the crystallization direction and the charge transferring direction of the thin film transistors makes control of the characteristics of the thin film transistors possible. With respect to the laser treatment device for crystallizing the semiconductor film, the beam shape of laser oscillated from the continuously oscillating type laser device is made to be elliptical by a cylindrical lens and said cylindrical lens is made rotatable and said laser beam is scanned on said substrate by a galvanomirror and said laser beam can be focused upon said substrate by f-θ lens.

    摘要翻译： 本发明的目的是获得在基板上具有受控特性的薄膜晶体管。 装置通过连续振荡式激光使基板上形成的半导体膜结晶化。 连续振荡型激光的扫描方向与结晶方向一致。 调整薄膜晶体管的结晶方向和电荷转移方向使得可以控制薄膜晶体管的特性。 对于用于使半导体膜结晶的激光治疗装置，由连续摆动式激光装置振荡的激光束的波束形状通过柱面透镜制成椭圆形，所述柱面透镜可旋转，并且所述激光束在所述 衬底由电镜镜和所述激光束可以通过f-theta透镜聚焦在所述衬底上。

    Wafer-level sealed microdevice having trench isolation and methods for making the same
    5.
    发明授权
    Wafer-level sealed microdevice having trench isolation and methods for making the same 失效
    具有沟槽隔离的晶圆级密封微型器件及其制造方法

    公开(公告)号：US07045868B2

    公开(公告)日：2006-05-16

    申请号：US10631604

    申请日：2003-07-31

    申请人： Xiaoyi Ding ,  John P. Schuster

    发明人： Xiaoyi Ding ,  John P. Schuster

    IPC分类号： H01L27/14 ,  H01I21/00

    CPC分类号： G06F17/30873 ,  B81B7/007 ,  B81C2203/0118 ,  G06N5/00 ,  H01L2924/16235

    摘要： A microdevice (20) having a hermetically sealed cavity (22) to house a microstructure (26). The microdevice (20) comprises a substrate (30), a cap (40), an isolation layer (70), at least one conductive island (60), and an isolation trench (50). The substrate (30) has a top side (32) with a plurality of conductive traces (36) formed thereon. The conductive traces (36) provide electrical connection to the microstructure (26). The cap (40) has a base portion (42) and a sidewall (44). The sidewall (44) extends outwardly from the base portion (42) to define a recess (46) in the cap (40). The isolation layer (70) is attached between the sidewall (44) of the cap (40) and the plurality of conductive traces (36). The conductive island (60) is attached to at least one of the plurality of conductive traces (36). The isolation trench (50) is positioned between the cap (40) and the conductive island (60) and may be unfilled or at least partially filled with an electrically isolating material. There is also a method of making the same microdevice. sidewall (44) extends outwardly from the base portion (42) to define a recess (46) in the cap (40). The isolation layer (70) is attached between the sidewall (44) of the cap (40) and the plurality of conductive traces (36). The conductive island (60) is attached to at least one of the plurality of conductive traces (36). The isolation trench (50) is positioned between the cap (40) and the conductive island (60) and may be unfilled or at least partially filled with an electrically isolating material. There is also a method of making the same microdevice.

    摘要翻译： 具有用于容纳微结构（26）的气密密封腔（22）的微器件（20）。 微器件（20）包括衬底（30），帽（40），隔离层（70），至少一个导电岛（60）和隔离沟槽（50）。 衬底（30）具有其上形成有多个导电迹线（36）的顶侧（32）。 导电迹线（36）提供与微结构（26）的电连接。 盖（40）具有基部（42）和侧壁（44）。 侧壁（44）从基部（42）向外延伸以在盖（40）中限定凹部（46）。 隔离层（70）被安装在盖（40）的侧壁（44）和多个导电迹线（36）之间。 导电岛（60）附接到多个导电迹线（36）中的至少一个。 隔离沟槽（50）位于盖（40）和导电岛（60）之间，并且可以是未填充的或至少部分地填充有电隔离材料。 还有一种制作相同微型装置的方法。 侧壁（44）从基部（42）向外延伸以在盖（40）中限定凹部（46）。 隔离层（70）被安装在盖（40）的侧壁（44）和多个导电迹线（36）之间。 导电岛（60）附接到多个导电迹线（36）中的至少一个。 隔离沟槽（50）位于盖（40）和导电岛（60）之间，并且可以是未填充的或至少部分地填充有电隔离材料。 还有一种制作相同微型装置的方法。

    Method for fabricating liquid crystal display device
    7.
    发明授权
    Method for fabricating liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号：US07244627B2

    公开(公告)日：2007-07-17

    申请号：US10920207

    申请日：2004-08-18

    申请人： Yun Bok Lee ,  Yong Sung Ham ,  Su Hyun Park ,  Seung Hee Nam

    发明人： Yun Bok Lee ,  Yong Sung Ham ,  Su Hyun Park ,  Seung Hee Nam

    IPC分类号： H01I21/00

    CPC分类号： G02F1/1362 ,  G02F1/133784 ,  G02F1/133788 ,  G02F1/134363

    摘要： A method for fabricating a liquid crystal display (LCD) device to improve picture quality by preventing defective rubbing, is disclosed. The method which includes preparing first and second substrates, forming a thin film transistor on the first substrate, forming a first orientation layer on the first substrate including the thin film transistor, performing rubbing and orientation direction alignment processes on the first orientation layer to provide a uniform alignment direction, and forming a liquid crystal layer between the first and second substrates.

    摘要翻译： 公开了一种用于制造液晶显示器（LCD）装置以通过防止有缺陷的摩擦来提高图像质量的方法。 该方法包括制备第一和第二衬底，在第一衬底上形成薄膜晶体管，在包括薄膜晶体管的第一衬底上形成第一取向层，在第一取向层上执行摩擦和取向方向取向处理， 均匀排列方向，并且在第一和第二基板之间形成液晶层。

    Manufacturing method of semiconducter device
    8.
    发明授权
    Manufacturing method of semiconducter device 失效
    半导体器件的制造方法

    公开(公告)号：US07078242B2

    公开(公告)日：2006-07-18

    申请号：US10835572

    申请日：2004-04-30

    申请人： Katsuyoshi Matsuura ,  Wensheng Wang ,  Ko Nakamura

    发明人： Katsuyoshi Matsuura ,  Wensheng Wang ,  Ko Nakamura

    IPC分类号： H01I21/00

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

    摘要： An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.

    摘要翻译： 通过反应溅射法在PLZT膜上形成作为第一导电氧化膜的IrO xS膜。 此后，通过例如RTA的热处理在含有分压小于5％的大气压的氧的气氛中进行。 结果促进了PLZT膜的结晶化，对IrO x薄膜进行退火处理。 此后，在600℃或更高（例如650℃）下的炉退火在例如O 2 2气氛中进行60分钟，作为回收退火以回收PLZT中的氧缺乏 电影。 随后，通过溅射法在IrO 2膜上形成IrO 2膜作为第二导电氧化物膜。