公开(公告)号：US09123869B2

公开(公告)日：2015-09-01

申请号：US13036829

申请日：2011-02-28

申请人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Cheng Why Tan ,  Gin Ghee Tan

发明人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Cheng Why Tan ,  Gin Ghee Tan

IPC分类号： H01L33/00 ,  H01L23/48 ,  H01L33/48 ,  H01L33/62 ,  H01L23/498

CPC分类号： H01L33/486 ,  H01L23/49844 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2924/01322

摘要： A semiconductor device includes a light emitting semiconductor die mounted on at least one of first and second electrically conductive bonding pads, which are located on a first major surface of a substrate of the device. The light emitting semiconductor die has an anode and a cathode, which are electrically connected to the first and second electrically conductive bonding pads. The semiconductor device further includes first and second electrically conductive connecting pads, which are located on a second major surface of the substrate. The first and second electrically conductive bonding pads are electrically connected to the first and second electrically conductive connecting pads via first and second electrically conductive edge interconnecting elements.

摘要翻译： 半导体器件包括安装在位于器件的衬底的第一主表面上的第一和第二导电焊盘中的至少一个的发光半导体管芯。 发光半导体管芯具有与第一和第二导电接合焊盘电连接的阳极和阴极。 半导体器件还包括位于衬底的第二主表面上的第一和第二导电连接焊盘。 第一和第二导电接合焊盘通过第一和第二导电边缘互连元件电连接到第一和第二导电连接焊盘。

公开(公告)号：US08537873B2

公开(公告)日：2013-09-17

申请号：US13554319

申请日：2012-07-20

申请人： Kong Weng Lee ,  James Yonghong Guo ,  Vincent V. Wong ,  Jay A. Skidmore ,  An-Chun Tien

发明人： Kong Weng Lee ,  James Yonghong Guo ,  Vincent V. Wong ,  Jay A. Skidmore ,  An-Chun Tien

IPC分类号： H01S3/08

CPC分类号： H01S5/02292 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2924/13091 ,  H01L2924/16195 ,  H01S5/02208 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/042 ,  H01S5/4056 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to the packaging of high power laser(s) in a surface mount technology (SMT) configuration at low-cost using wafer-scale processing. A reflective sidewall is used to redirect the output emission from edge-emitting lasers through an optical element (e.g., a diffuser, lens, etc.). A common electrical pad centered inside the package provides p-side connection to multiple laser diodes (i.e. for power scalability). Thick plating (e.g. 75 um to 125 um) with a heat and electrically conductive material, e.g. copper, on a raised bonding area of a substrate provides good heat dissipation and spreading to the substrate layer during operation. The composite CTE of the substrate layer, e.g. AlN, and the heat/electrical conductive plating, e.g. Cu, substantially matches well with the laser substrates, e.g. GaAs-based, without the requirement for an additional submount.

摘要翻译： 本发明涉及使用晶片级处理以低成本的表面贴装技术（SMT）配置中的大功率激光器的封装。 反射侧壁用于重定向来自边缘发射激光器的输出发射通过光学元件（例如漫射器，透镜等）。 在封装内集中的通用电焊盘提供与多个激光二极管的p侧连接（即用于功率可伸缩性）。 厚电镀（例如75μm至125μm）与热和导电材料，例如。 在衬底的凸起接合区域上的铜在操作期间提供良好的散热和扩散到衬底层。 衬底层的复合CTE，例如， AlN，以及导热电镀，例如， Cu，基本上与激光基板匹配，例如。 基于GaAs，不需要额外的基座。

公开(公告)号：US20130022069A1

公开(公告)日：2013-01-24

申请号：US13554319

申请日：2012-07-20

申请人： Kong Weng Lee ,  James Yonghong Guo ,  Vincent V. Wong ,  Jay A. Skidmore ,  An-Chun Tien

发明人： Kong Weng Lee ,  James Yonghong Guo ,  Vincent V. Wong ,  Jay A. Skidmore ,  An-Chun Tien

IPC分类号： H01S3/09

CPC分类号： H01S5/02292 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2924/13091 ,  H01L2924/16195 ,  H01S5/02208 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/042 ,  H01S5/4056 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to the packaging of high power laser(s) in a surface mount technology (SMT) configuration at low-cost using wafer-scale processing. A reflective sidewall is used to redirect the output emission from edge-emitting lasers through an optical element (e.g., a diffuser, lens, etc.). A common electrical pad centered inside the package provides p-side connection to multiple laser diodes (i.e. for power scalability). Thick plating (e.g. 75 um to 125 um) with a heat and electrically conductive material, e.g. copper, on a raised bonding area of a substrate provides good heat dissipation and spreading to the substrate layer during operation. The composite CTE of the substrate layer, e.g. AlN, and the heat/electrical conductive plating, e.g. Cu, substantially matches well with the laser substrates, e.g. GaAs-based, without the requirement for an additional submount.

摘要翻译： 本发明涉及使用晶片级处理以低成本的表面贴装技术（SMT）配置中的大功率激光器的封装。 反射侧壁用于重定向来自边缘发射激光器的输出发射通过光学元件（例如漫射器，透镜等）。 在封装内集中的通用电焊盘提供与多个激光二极管的p侧连接（即用于功率可伸缩性）。 厚电镀（例如75μm至125μm）与热和导电材料，例如。 在衬底的凸起接合区域上的铜在操作期间提供良好的散热和扩散到衬底层。 衬底层的复合CTE，例如， AlN，以及导热电镀，例如， Cu，基本上与激光基板匹配，例如。 基于GaAs，不需要额外的基座。

公开(公告)号：US20110147788A1

公开(公告)日：2011-06-23

申请号：US13036829

申请日：2011-02-28

申请人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Cheng Why Tan ,  Gin Ghee Tan

发明人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Cheng Why Tan ,  Gin Ghee Tan

IPC分类号： H01L33/62

CPC分类号： H01L33/486 ,  H01L23/49844 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2924/01322

摘要： A semiconductor device includes a light emitting semiconductor die mounted on at least one of first and second electrically conductive bonding pads, which are located on a first major surface of a substrate of the device. The light emitting semiconductor die has an anode and a cathode, which are electrically connected to the first and second electrically conductive bonding pads. The semiconductor device further includes first and second electrically conductive connecting pads, which are located on a second major surface of the substrate. The first and second electrically conductive bonding pads are electrically connected to the first and second electrically conductive connecting pads via first and second electrically conductive edge interconnecting elements.

摘要翻译： 半导体器件包括安装在位于器件的衬底的第一主表面上的第一和第二导电焊盘中的至少一个的发光半导体管芯。 发光半导体管芯具有与第一和第二导电接合焊盘电连接的阳极和阴极。 半导体器件还包括位于衬底的第二主表面上的第一和第二导电连接焊盘。 第一和第二导电接合焊盘通过第一和第二导电边缘互连元件电连接到第一和第二导电连接焊盘。

公开(公告)号：US07919787B2

公开(公告)日：2011-04-05

申请号：US11838301

申请日：2007-08-14

申请人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Cheng Why Tan ,  Gin Ghee Tan

发明人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Cheng Why Tan ,  Gin Ghee Tan

IPC分类号： H01L33/00 ,  H01L23/48

CPC分类号： H01L33/486 ,  H01L23/49844 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2924/01322

摘要： A semiconductor device includes a light emitting semiconductor die mounted on at least one of first and second electrically conductive bonding pads, which are located on a first major surface of a substrate of the device. The light emitting semiconductor die has an anode and a cathode, which are electrically connected to the first and second electrically conductive bonding pads. The semiconductor device further includes first and second electrically conductive connecting pads, which are located on a second major surface of the substrate. The first and second electrically conductive bonding pads are electrically connected to the first and second electrically conductive connecting pads via first and second electrically conductive interconnecting elements.

摘要翻译： 半导体器件包括安装在位于器件的衬底的第一主表面上的第一和第二导电焊盘中的至少一个的发光半导体管芯。 发光半导体管芯具有与第一和第二导电接合焊盘电连接的阳极和阴极。 半导体器件还包括位于衬底的第二主表面上的第一和第二导电连接焊盘。 第一和第二导电接合焊盘经由第一和第二导电互连元件电连接到第一和第二导电连接焊盘。

公开(公告)号：US07279355B2

公开(公告)日：2007-10-09

申请号：US10608606

申请日：2003-06-27

申请人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Gin Ghee Tan ,  Cheng Why Tan

发明人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Gin Ghee Tan ,  Cheng Why Tan

IPC分类号： H01I21/00

CPC分类号： H01L24/97 ,  H01L23/3121 ,  H01L23/49827 ,  H01L23/49838 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012

摘要： A substantially planar substrate having opposed major surfaces is provided. The substrate includes a through hole that extends between the major surfaces. The through hole is filled with a conductive interconnecting element. A conductive mounting pad and a conductive connecting pad are formed on different ones of the major surfaces in electrical contact with the conductive interconnecting element. The packaging device formed by the method has a volume that is only a few times that of the semiconductor die and can be fabricated from materials that can withstand high-temperature die attach processes. The packaging device can be configured as the only packaging device used in the semiconductor device or as a submount for a semiconductor die that requires a high-temperature die attach process.

摘要翻译： 提供具有相对的主表面的基本平坦的基板。 基板包括在主表面之间延伸的通孔。 通孔填充有导电互连元件。 导电安装焊盘和导电连接焊盘形成在与导电互连元件电接触的不同主表面上。 通过该方法形成的包装装置的体积仅为半导体管芯的体积的几倍，并且可以由能够承受高温管芯附接工艺的材料制成。 包装装置可以被配置为在半导体器件中使用的唯一的包装装置或者需要高温管芯附接工艺的半导体管芯的基座。

公开(公告)号：US07256486B2

公开(公告)日：2007-08-14

申请号：US10608605

申请日：2003-06-27

申请人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Gin Ghee Tan ,  Cheng Why Tan

发明人： Kong Weng Lee ,  Kee Yean Ng ,  Yew Cheong Kuan ,  Gin Ghee Tan ,  Cheng Why Tan

IPC分类号： H01L29/22

CPC分类号： H01L24/97 ,  H01L23/49844 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/85444 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： The packaging device includes a substrate, a mounting pad, a connecting pad and an interconnecting element. The substrate is substantially planar and has opposed major surfaces. The mounting pad is conductive and is located on one of the major surfaces. The connecting pad is conductive and is located on the other of the major surfaces. The conductive interconnecting element extends through the substrate and electrically interconnects the mounting pad and the connecting pad. The packaging device has a volume that is only a few times that of the semiconductor die and can be fabricated from materials that can withstand high-temperature die attach processes. The packaging device can be configured as the only packaging device used in the semiconductor device or as a submount for a semiconductor die that requires a high-temperature die attach process.

摘要翻译： 包装装置包括基板，安装垫，连接垫和互连元件。 基板基本上是平面的并且具有相对的主表面。 安装垫是导电的并且位于主要表面中的一个上。 连接垫是导电的并且位于另一个主表面上。 导电互连元件延伸穿过基板并将安装焊盘和连接焊盘电互连。 包装装置的体积仅为半导体管芯的体积的几倍，并且可以由能够承受高温管芯附着工艺的材料制成。 包装装置可以被配置为在半导体器件中使用的唯一的包装装置或者需要高温管芯附接工艺的半导体管芯的基座。