公开(公告)号：US20020150682A1

公开(公告)日：2002-10-17

申请号：US10120713

申请日：2002-04-10

Applicant: Applied Materials, Inc.

Inventor： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC: C23C016/00 ,  C23C008/00 ,  C23C010/10 ,  C23C016/24 ,  C23C016/08

CPC classification number: H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

Abstract translation: 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US20010053423A1

公开(公告)日：2001-12-20

申请号：US09515574

申请日：2000-02-29

Inventor： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

IPC: C23C016/00 ,  C23C016/06 ,  C23C016/24 ,  H05H001/24

CPC classification number: C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract translation: 改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。 氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。 将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。 气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

公开(公告)号：US20040043151A1

公开(公告)日：2004-03-04

申请号：US10229813

申请日：2002-08-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Brian A. Vaartstra

IPC: C23C016/24 ,  C23C016/00 ,  C23C016/22 ,  C23C016/08 ,  H01L021/44 ,  C23C016/34

CPC classification number: C23C16/45523 ,  C23C16/08 ,  C23C16/30 ,  C23C16/42 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/7687 ,  H01L28/57

Abstract: A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.

Abstract translation: 通常使用通常用作扩散阻挡层的硅化硅层（包括钽硅氮化物层）的方法通过使用蒸镀法与卤化钽前体化合物，硅前体化合物 ，和任选的氮前体化合物。

公开(公告)号：US20040011290A1

公开(公告)日：2004-01-22

申请号：US10457513

申请日：2003-06-10

Inventor： Takaharu Kondo ,  Shotaro Okabe ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Hiroyki Ozaki ,  Tetsuya Kimura ,  Takeshi Shishido

IPC: C23C016/24

CPC classification number: H01J37/32082 ,  C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  H01J2237/0206 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

Abstract: A deposited film-forming apparatus by means of high frequency plasma CVD and having a power application electrode arranged in a film-forming vacuum vessel, a high frequency power source connected to said power application electrode, a direct current power source which is connected to said power application electrode and is connected with said high frequency power source in parallel connection, a detector for detecting a symptom of occurrence of arc discharge, and an arc discharge preventive means for preventing occurrence of arc discharge based on said symptom of occurrence of arc discharge which is detected by said detector, wherein said arc discharge preventive means is connected between said power application electrode and said direct current power source such that said arc discharge preventive means is connected with said direct current power source in series connection and is connected with said high frequency power source in parallel connection.

Abstract translation: 一种通过高频等离子体CVD沉积的膜形成装置，具有布置在成膜真空容器中的功率施加电极，连接到所述电力施加电极的高频电源，连接到所述电力施加电极的直流电源 电力施加电极并联并与所述高频电源并联连接，用于检测电弧放电发生的症状的检测器，以及用于根据所述电弧放电发生的症状防止发生电弧放电的电弧放电防止装置 由所述检测器检测，其中所述电弧放电防止装置连接在所述电力施加电极和所述直流电源之间，使得所述电弧放电装置与所述直流电源串联连接，并与所述高频 电源并联。

公开(公告)号：US20020146512A1

公开(公告)日：2002-10-10

申请号：US09780800

申请日：2001-02-08

Applicant: Applied Materials, Inc.

Inventor： Kent Rossman

IPC: C23C016/00 ,  C23C008/00 ,  C23C016/24 ,  H01L021/469

CPC classification number: H01J37/32477 ,  C23C16/4404 ,  C23C30/00 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/905 ,  Y10S438/913

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2nnull2) process gas and/or is deposited from a plasma having a density of at least 1null1011 ions/cm3.

Abstract translation: 本发明的实施例包括沉积改进的调味膜的方法。 在一个实施例中，该方法包括在执行基板处理操作之前，在与氧化硅层相反的基板处理室的内表面上形成硅层。 在某些实施方案中，硅层包含至少70％的原子硅，由高密度硅烷（SinH2n + 2）工艺气体沉积和/或由密度为至少1×10 11个离子/ cm 3的等离子体沉积。

公开(公告)号：US20040149225A1

公开(公告)日：2004-08-05

申请号：US10705599

申请日：2003-11-10

Inventor： Christopher M. Weikart ,  Paul J. O'Connor ,  Ing-Feng Hu

IPC: B05D007/22 ,  C23C016/00 ,  C23C016/24

CPC classification number: B05D1/62 ,  B05D7/227 ,  C09D4/00 ,  C23C16/0272 ,  C23C16/042 ,  C23C16/045 ,  C23C16/402 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  C08G77/04

Abstract: The present invention describes a method and an apparatus for plasma coating the inside surface of a container to provide an effective barrier against gas transmission. The method provides a way to deposit rapidly and uniformly very thin and nearly defect-free layers of polyorganosiloxane and silicon oxide on the inner surface of a container to achieve more than an order of magnitude increase in barrier properties.

Abstract translation: 本发明描述了一种用于等离子体涂覆容器内表面以提供抵抗气体传输的有效屏障的方法和装置。 该方法提供了在容器的内表面上快速均匀地沉积非常薄且几乎无缺陷的聚有机硅氧烷和氧化硅层的方法，以达到阻挡性能提高一个数量级以上。

公开(公告)号：US20030044515A1

公开(公告)日：2003-03-06

申请号：US10225836

申请日：2002-08-22

Applicant: The Ohio State University

Inventor： Kenneth H. Sandhage

IPC: B05D003/00 ,  C23C016/24 ,  H05H001/24

CPC classification number: B81C1/00

Abstract: The purpose of the present invention is to describe a novel approach for converting 3-dimensional, synthetic micro- and nano-templates into different materials with a retention of shape/dimensions and morphological features. The ultimate objective of this approach is to mass-produce micro- and nano-templates of tailored shapes through the use of synthetic or man-made micropreforms, and then chemical conversion of such templates by controlled chemical reactions into near net-shaped, micro- and nano-components of desired compositions. The basic idea of this invention is to obtain a synthetic microtemplate with a desired shape and with desired surface features, and then to convert the microtemplate into a different material through the use of chemical reactions.

Abstract translation: 本发明的目的是描述一种用于将三维，合成的微型和纳米模板转换成具有保持形状/尺寸和形态特征的不同材料的新方法。 这种方法的最终目标是通过使用合成或人造微变形模块大规模生产定制形状的微米和纳米模板，然后通过受控化学反应将这些模板化学转化成近网状， 和所需组合物的纳米组分。 本发明的基本思想是获得具有所需形状和所需表面特征的合成微型模板，然后通过使用化学反应将微模板转化为不同的材料。

公开(公告)号：US20020034645A1

公开(公告)日：2002-03-21

申请号：US09865549

申请日：2001-05-29

Inventor： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

IPC: C23C016/24

CPC classification number: H01L31/202 ,  C23C16/24 ,  C23C16/509 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

Abstract: In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by QnullPonullPR/S/d is controlled so as to be 50 or more, wherein Po (W) is a supplied power, S (cm2) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and PR (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.

Abstract translation: 在使用包含硅卤化物和氢的源气体的高频等离子体CVD中，由Q = PoxPR / S / d定义的Q值为50以上，其中Po（W）为供电电力， S（cm2）是高频引入电极的面积，d（cm）是高频引入电极和衬底之间的距离，PR（mTorr）是压力。 因此，提供了一种形成硅薄膜，硅薄膜和光电特性优异的光电元件的方法，其获得了工业实用水平的成膜速率。

公开(公告)号：US20010051215A1

公开(公告)日：2001-12-13

申请号：US09835271

申请日：2001-04-13

Applicant: Gelest, Inc.

Inventor： Barry C. Arkles ,  Alain E. Kaloyeros

IPC: C23C016/06 ,  C23C016/14 ,  C23C016/24

CPC classification number: H01L21/76846 ,  C23C16/34 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76864

Abstract: A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, including introducing into a deposition chamber: (i) a substrate; (ii) a source precursor comprising titanium in a vapor state having the formula (I):Ti(I4nullmnulln)(Brm)Cl(n)nullnull(I)wherein m is an integer from zero to 4, n is an integer from 0 to 2, and mnulln is no greater than 4; (iii) a compound comprising silicon in a vapor state; (iv) a reactant gas comprising nitrogen; and maintaining a temperature of the substrate in the chamber at about 70 null C. to about 550 null C. for a period of time sufficient to deposit the TiSixNy film on the substrate.

Abstract translation: 一种用于将TiSixNy膜化学气相沉积到衬底上的方法，其中x大于零且不大于约5，y大于零且不大于约7，包括引入沉积室：（i） 基质; （ii）包含具有式（I）的蒸汽状态的钛的源前体：（在线式> Ti（I4-mn）（Brm）Cl（n）（I） 其中m为0〜4的整数，n为0〜2的整数，m + n为4以下。 （iii）包含蒸汽状态的硅的化合物; （iv）包含氮的反应气体; 并将该基板的温度保持在约70℃至约550℃，持续一段足以将TiSixNy膜沉积在基底上的时间。

公开(公告)号：US20020001546A1

公开(公告)日：2002-01-03

申请号：US09850123

申请日：2001-05-07

Applicant: Massachusetts Institute of Technology

Inventor： Ian Hunter ,  Colin J.H. Brenan ,  Tanya S. Kanigan

IPC: G01N021/00 ,  C12Q001/68 ,  C25B003/00 ,  B65B001/04 ,  C23C016/24

CPC classification number: B01L3/0293 ,  B01F13/0071 ,  B01F13/0084 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00317 ,  B01J2219/00319 ,  B01J2219/00351 ,  B01J2219/0036 ,  B01J2219/00369 ,  B01J2219/00373 ,  B01J2219/00387 ,  B01J2219/00389 ,  B01J2219/00423 ,  B01J2219/0043 ,  B01J2219/00479 ,  B01J2219/00495 ,  B01J2219/005 ,  B01J2219/00511 ,  B01J2219/00533 ,  B01J2219/00536 ,  B01J2219/00549 ,  B01J2219/00585 ,  B01J2219/00587 ,  B01J2219/00596 ,  B01J2219/00648 ,  B01J2219/00659 ,  B01J2219/00686 ,  B01L3/0262 ,  B01L3/5025 ,  B01L3/50255 ,  B01L3/5085 ,  B01L3/50857 ,  B01L99/00 ,  B01L2200/0642 ,  B01L2300/0819 ,  B01L2300/0845 ,  B01L2400/022 ,  C40B60/14 ,  C40B70/00 ,  G01N30/466 ,  G01N30/6095 ,  G01N30/82 ,  G01N35/00069 ,  G01N2035/00237 ,  G01N2035/1037 ,  Y10T83/0481 ,  Y10T436/11 ,  Y10T436/25 ,  Y10T436/25625 ,  Y10T436/2575

Abstract: Methods for manufacturing and using an apparatus for manipulating and analyzing a large number of microscopic samples of a liquid or materials, including cells, in liquid suspension. Parallel through-holes are formed in a platen and loaded with a liquid. Loading may be performed in such a way as to create a gradient, with respect to the position of the through-holes, of the concentration of a particular substance or of another quantity. Mixing of the contents of through-holes may be obtained by bringing filled microwell arrays into contact with each other with registration of individual through-holes.

Abstract translation: 用于制造和使用用于操纵和分析液体或包括细胞在内的液体悬浮液的大量微观样品的装置的方法。 平行的通孔形成在压板中并装载液体。 可以以相对于通孔的位置产生特定物质的浓度或另一数量的浓度的梯度来进行装载。 可以通过使填充的微孔阵列通过单独的通孔对准而彼此接触来获得通孔内容物的混合。