公开(公告)号：US11578229B2

公开(公告)日：2023-02-14

申请号：US16323270

申请日：2017-07-14

Applicant: YEDITEPE UNIVERSITESI

Inventor： Fikrettin Sahin ,  Zeynep Iyigundogdu ,  Okan Demir ,  Merve Gulerim ,  Sanem Argin

IPC: C09D105/06 ,  C09D7/61 ,  C09D5/25 ,  B65D81/28 ,  C08K3/38 ,  C09D5/02

Abstract: The present invention relates to a gelatin or pectin based antimicrobial surface coating material. In the present invention, boron compounds are mixed with gelatin or pectin and a surface coating material in the form of a film is obtained. The said coating material can be used in all packaging industry requiring hygiene particularly in food industry. The invention enables packages to be antifungal, anticandidal and antibacterial.

公开(公告)号：US07819965B2

公开(公告)日：2010-10-26

申请号：US11866107

申请日：2007-10-02

Applicant: Atsuya Yoshinaka ,  Daisuke Takagi

Inventor： Atsuya Yoshinaka ,  Daisuke Takagi

IPC: C09D5/25

CPC classification number: C23C18/1208 ,  C09D1/00 ,  C23C18/127 ,  C23C18/1283 ,  H01G4/1218 ,  H01G9/2031 ,  H01L21/31691 ,  H01L28/40 ,  Y02E10/542 ,  Y02P70/521

Abstract: A coating formulation contains the following components (A), (B) and (C): (A) an organic acid-titanium compound having at least one titanium atom and at least one C2-12 aliphatic organic acid residual group as essential constituents and having no constituent other than the essential constituents, (B) fine particles of a titanate-based compound, said fine particles having an average particle size of from 10 to 100 nm, and (C) an organic solvent. A content of the components (A) is from 0.1 to 1.5 mol/kg in terms of titanium atoms, and a content of the component (B) is from 0.1 to 1.5 mol/kg in terms of titanium atoms. A production process for a titanate-based ceramic film, which makes use of the coating formulation, is also disclosed.

Abstract translation: 涂料配方含有以下组分（A），（B）和（C）：（A）具有至少一个钛原子和至少一个C 2-12脂族有机酸残基作为必要组分的有机酸 - 钛化合物，以及 不含有必要成分的成分，（B）钛酸酯系化合物的微粒，所述微粒的平均粒径为10〜100nm，（C）有机溶剂。 组分（A）的含量以钛原子计为0.1至1.5mol / kg，组分（B）的含量以钛原子计为0.1至1.5mol / kg。 还公开了利用涂料配方的钛酸酯系陶瓷膜的制造方法。

公开(公告)号：US20050244582A1

公开(公告)日：2005-11-03

申请号：US10525570

申请日：2003-08-14

Applicant: Georg Weihrauch

Inventor： Georg Weihrauch

IPC: B05D5/00 ,  B25G1/10 ,  B41M1/40 ,  C09D5/25

CPC classification number: B41M1/40 ,  B05D5/02 ,  B05D5/06 ,  C09D11/037

Abstract: The invention relates to a method for producting a dotted and/or planar grip-promoting and/or slip-resistant coating on a holding section or grip section of a house-hold utensil, said coating being printed onto the surface of the holding section or grip section by means of a silk screen printing process or a transfer printing process, and especially a tampon printing process. The coating material is disposed in a predetermined configuration that corresponds to a desired printed image on a pattern support (printing block), is then transferred to a transfer element, and is applied to or printed onto the holding section or grip section.

Abstract translation: 本发明涉及一种在家庭用具的保持部分或抓握部分上产生点状和/或平面的抓握促进和/或防滑涂层的方法，所述涂层被印刷到保持部分的表面上，或 通过丝网印刷工艺或转印印刷工艺，特别是棉塞印刷工艺的夹持部分。 将涂料以与图案支撑体（印刷块）上的所需印刷图像相对应的预定构造设置，然后转印到转印元件上，并被施加到或打印到保持部分或抓握部分上。

公开(公告)号：US06900284B2

公开(公告)日：2005-05-31

申请号：US10261034

申请日：2002-09-30

Applicant: Klaus Lowack ,  Anna Maltenberger ,  Recai Sezi ,  Andreas Walter

Inventor： Klaus Lowack ,  Anna Maltenberger ,  Recai Sezi ,  Andreas Walter

IPC: C08G73/00 ,  C08G73/10 ,  C09D5/25 ,  H01B3/30 ,  H01L21/312 ,  H01L23/532 ,  C08G73/22 ,  C08G69/00

CPC classification number: H01L21/02118 ,  C08G73/00 ,  C08G73/10 ,  H01B3/305 ,  H01L21/02282 ,  H01L21/312 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Poly-o-hydroxyamides are cyclicized to obtain polybenzoxazoles. The poly-o-hydroxyamides provide effective filling of trenches. In particular, the poly-o-hydroxyamides can fill trenches having a width of less than 100 nm and an aspect ratio of more than 4. Further, the polybenzoxazoles of the invention are very suitable for the damascene process. A dielectric can be made from the polybenzoxazole. In turn, semiconductor devices can include the dieletric. Processes for making the poly-o-hydroxyamides, polybenzoxazoles, and semiconductor devices are included.

Abstract translation: 环氧化聚邻羟基酰胺得到聚苯并恶唑。 聚邻羟基酰胺提供有效填充沟槽。 特别地，聚邻羟基酰胺可以填充宽度小于100nm，纵横比大于4的沟槽。此外，本发明的聚苯并恶唑非常适用于镶嵌工艺。 电介质可以由聚苯并恶唑制成。 反过来，半导体器件可以包括消毒的。 包括制备聚邻羟基酰胺，聚苯并恶唑和半导体器件的方法。

公开(公告)号：US20050112386A1

公开(公告)日：2005-05-26

申请号：US10991385

申请日：2004-11-19

Applicant: Masahiro Akiyama ,  Manabu Sekiguchi ,  Seitaro Hattori ,  Terukazu Kokubo

Inventor： Masahiro Akiyama ,  Manabu Sekiguchi ,  Seitaro Hattori ,  Terukazu Kokubo

IPC: C08G77/08 ,  B05D7/24 ,  C08G77/50 ,  C09D5/25 ,  C09D7/12 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312 ,  B32B9/04 ,  C08L83/04

CPC classification number: C09D183/04 ,  C09D183/14 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

Abstract: A composition for film formation having low dielectric constant, excellent adhesion to a silica film and excellent adhesion to an organic film, a method for preparing the composition, and a method for forming a silica film using the composition are disclosed. The composition for film formation comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one specific silane compound, and (B) an oxygen-containing organic solvent, wherein the content of the product of hydrolysis and condensation (A) is less than 5% by weight based on the weight of the composition. The composition can form a silica film having improved dielectric constant characteristics and storage stability, and also improved adhesion to other silica films and organic films.

Abstract translation: 公开了具有低介电常数的组合物，对二氧化硅膜的优异粘附性和对有机膜的优异粘附性，该组合物的制备方法和使用该组合物形成二氧化硅膜的方法。 用于成膜的组合物包含（A）通过水解和缩合至少一种特定的硅烷化合物获得的水解和缩合产物，和（B）含氧有机溶剂，其中水解和缩合产物的含量（A ）基于组合物的重量小于5重量％。 该组合物可以形成具有改善的介电常数特性和储存稳定性的二氧化硅膜，并且还改善了与其它二氧化硅膜和有机膜的粘附性。

公开(公告)号：US06896955B2

公开(公告)日：2005-05-24

申请号：US10219164

申请日：2002-08-13

Applicant: Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

Inventor： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

IPC: B05D5/12 ,  B05D7/24 ,  C01B33/16 ,  C09D5/25 ,  C09D183/02 ,  H01L21/20 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  B32B3/00

CPC classification number: H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10S438/96 ,  Y10T428/249953 ,  Y10T428/249969

Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

Abstract translation: 一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂 铵型盐在酸性前体溶液中。 使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。 在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。 在一些实施方案中，离子添加剂是选自一般组成的阳离子添加剂组合物[NR（CH 3）3） 其中R是链长1至24的疏水性配体，包括四甲基铵和十六烷基三甲基铵，并且A是一种阴离子，其可以选自下组： 基本上由甲酸盐，硝酸盐，草酸盐，乙酸盐，磷酸盐，碳酸盐和氢氧化物组成。 在表面活性剂模板化的多孔氧化物前体制剂中加入四甲基铵盐或更一般的四烷基铵盐或四官能铵盐或有机胺，以增加离子含量，代替在表面活性剂纯化过程中除去的碱离子杂质（钠和钾），但发现 以促进所形成的电介质的形成。

公开(公告)号：US6033765A

公开(公告)日：2000-03-07

申请号：US102542

申请日：1998-06-23

Applicant: Tsutomu Takahashi ,  Yoshifumi Tsujimoto ,  Hiroaki Kumada ,  Hiroyuki Sato

Inventor： Tsutomu Takahashi ,  Yoshifumi Tsujimoto ,  Hiroaki Kumada ,  Hiroyuki Sato

IPC: B32B15/14 ,  C08J5/04 ,  C08J5/24 ,  C09D5/25 ,  H05K1/03 ,  B23B3/00

CPC classification number: C08J5/24 ,  B32B15/14 ,  C08J5/04 ,  H05K1/0366 ,  H05K2201/0116 ,  H05K2201/0129 ,  H05K2201/0278 ,  H05K2201/0293 ,  H05K2201/068 ,  Y10S428/901 ,  Y10S428/902 ,  Y10S428/91 ,  Y10T428/24917 ,  Y10T428/24993 ,  Y10T428/24994 ,  Y10T428/249944 ,  Y10T428/249953 ,  Y10T428/249955 ,  Y10T428/2907 ,  Y10T428/2938 ,  Y10T428/2969 ,  Y10T428/2971 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31725 ,  Y10T442/2008 ,  Y10T442/2893 ,  Y10T442/2902

Abstract: The present invention provides a printed circuit substrate comprising a lightweight prepreg and a conductive layer. The prepeg having uniform formation, low linear thermal expansion coefficient and good mechanical strength, comprising a porous para-oriented aromatic polyamide film and a thermoplastic resin and/or a thermosetting resin, the porous para-oriented aromatic polyamide film being impregnated with the thermoplastic resin and/or the thermosetting resin, a process for producing the same, and a printed circuit substrate/board using the same.

Abstract translation: 本发明提供一种印刷电路基板，包括轻质预浸料和导电层。 包含多孔对位芳族聚酰胺薄膜和热塑性树脂和/或热固性树脂的具有均匀形成，低线性热膨胀系数和良好机械强度的预成型体，多孔对位芳族聚酰胺薄膜浸渍有热塑性树脂 和/或热固性树脂，其制备方法和使用其的印刷电路基板/印刷电路板。

公开(公告)号：US5998522A

公开(公告)日：1999-12-07

申请号：US42668

申请日：1998-03-17

Applicant: Tadashi Nakano ,  Makoto Shimura ,  Tomohiro Ohta

Inventor： Tadashi Nakano ,  Makoto Shimura ,  Tomohiro Ohta

IPC: C08G77/04 ,  C09D5/25 ,  C09D183/04 ,  C23C18/12 ,  G01N24/08 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  C08K5/10

CPC classification number: H01L23/5329 ,  C23C18/1212 ,  C23C18/122 ,  G01N24/08 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316 ,  H01L21/76801 ,  H01L21/76819 ,  H01L2924/0002

Abstract: A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:[SiR.sub.3 O.sub.1/2 ].sub.k [SiR.sub.2 O.sub.2/2 ].sub.l [SiRO.sub.3/2 ].sub.m [SiO.sub.4/2 ].sub.nwhere each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+21+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film. The present invention permits the formation of the insulating film with excellent properties such as an ability of fill up fine grooves and to planarize the surface of the substrate, and a small shrinkage factor. The method for evaluating the coating solution using .sup.29 Si-NMR technique is also described.

Abstract translation: 用于形成用于制造半导体器件的绝缘膜的涂布溶液包括由以下通式表示的硅氧烷：[SiR 3 O 1/2/2] k [SiR 2 O 2/2] l [SiRO 3/2] m [SiO 4/2] n，其中k ，l，m和n是整数，R可以相同或不同，表示至少一个有机基团，（3k + 21 + m）与（k + 1 + m + n）的比例在约0.8之间 约1.3。 本发明还涉及一种涂布溶液的制备方法以及使用该涂布液形成绝缘膜的方法，包括以下步骤：将涂布溶液涂布在半导体器件的基板的表面上以形成涂膜 在约150℃至约300℃的温度下使涂覆膜流化，使基材表面平坦化，并使流化涂膜固化形成绝缘膜。 本发明允许形成具有优异性能的绝缘膜，例如填充细槽的能力和使基板的表面平坦化，并且收缩率小。 还描述了使用29Si-NMR技术评价涂布溶液的方法。

公开(公告)号：US5888429A

公开(公告)日：1999-03-30

申请号：US685244

申请日：1996-07-23

Applicant: Walter C. Lovell

Inventor： Walter C. Lovell

IPC: B05D5/12 ,  C09D5/24 ,  C09D5/25 ,  D06M11/00 ,  D06M11/74 ,  D06M101/00 ,  D21H19/16 ,  H01B1/14 ,  H01B1/18 ,  H01B1/20 ,  H01B1/24 ,  H01C7/00 ,  H01C17/065 ,  H01B1/04

CPC classification number: H01C17/0652 ,  H01B1/14 ,  H01B1/18 ,  H01B1/20 ,  H01B1/24 ,  H01C17/06533 ,  Y10S428/901 ,  Y10T428/30

Abstract: The temperature adjustable coating and medium and method for providing an electrically-resistant temperature-adjustable article and structure. The coating provides a continuous electrically-conductive electrically-resistive path for the application of electrical current to the coating. The electrically-resistant temperature-adjustable article consists of a surface on which a high-temperature conductive-resistive coating is bound. The surface temperature of the article along the path is thereby adjustable between ambient and 2000.degree. F. in response to electric current applied to it without oxidization destroying the electrical conductivity of the medium in temperatures above 600.degree. F. The medium possesses the high-temperature conductive-resistive quality of the coating while maintaining a clay consistency capable of being formed into various shapes without a substrate.

Abstract translation: 温度可调的涂层和介质以及提供电阻温度可调的制品和结构的方法。 涂层提供了连续的导电电阻路径，用于向涂层施加电流。 耐电温度可调制品由其上结合有高温导电电阻涂层的表面组成。 因此，沿着路径的物品的表面温度可以响应于施加到其上的电流而在环境温度和2000°F之间可调节，而不会在高于600°F的温度下破坏介质的导电性而不会氧化。介质具有高温 导电性质的涂层，同时保持能够形成为各种形状而没有基底的粘土稠度。

公开(公告)号：US5840821A

公开(公告)日：1998-11-24

申请号：US545736

申请日：1995-11-21

Applicant: Tadashi Nakano ,  Makoto Shimura ,  Tomohiro Ohta

Inventor： Tadashi Nakano ,  Makoto Shimura ,  Tomohiro Ohta

IPC: C08G77/04 ,  C09D5/25 ,  C09D183/04 ,  C23C18/12 ,  G01N24/08 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  C08G77/00

CPC classification number: H01L23/5329 ,  C23C18/1212 ,  C23C18/122 ,  G01N24/08 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316 ,  H01L21/76801 ,  H01L21/76819 ,  H01L2924/0002

Abstract: A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:�SiR.sub.3 O.sub.1/2 !.sub.k �SiR.sub.2 O.sub.2/2 !.sub.l �SiRO.sub.3/2 !.sub.m �SiO.sub.4/2 !.sub.n where each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+2l+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film. The present invention permits the formation of the insulating film with excellent properties such as an ability of fill up fine groves and to planarize the surface of the substrate, and a small shrinkage factor. The method for evaluating the coating solution using .sup.29 Si-NMR technique is also described.

Abstract translation: PCT No.PCT / JP94 / 01910 Sec。 371日期：1995年11月21日 102（e）日期1995年11月21日PCT 1994年11月11日PCT公布。 公开号WO95 / 24639 日期1995年9月14日，用于制造半导体器件的绝缘膜形成用涂布液包括由以下通式表示的硅氧烷：[SiR 3 O 1/2/2] k [SiR 2 O 2/2] l [SiRO 3/2] m [SiO 4/2] 其中k，l，m和n各自为整数，R可以相同或不同，表示至少一个有机基团，并且（3k + 21 + m）与（k + 1 + m + n） 在约0.8和约1.3之间。 本发明还涉及一种涂布溶液的制备方法以及使用该涂布液形成绝缘膜的方法，包括以下步骤：将涂布溶液涂布在半导体器件的基板的表面上以形成涂膜 在约150℃至约300℃的温度下使涂覆膜流化，使基材表面平坦化，并使流化涂膜固化形成绝缘膜。 本发明允许形成具有优异性能的绝缘膜，例如填充细小树脂的能力和使基板的表面平坦化，并且收缩率小。 还描述了使用29Si-NMR技术评价涂布溶液的方法。