摘要:
A voltage-glitch detection and protection circuit and method are provided. Generally, circuit includes a voltage-glitch-detection-block (GDB) and a system-reset-block coupled to the GDB to generate a reset-signal to cause devices in a chip including the circuit to be reset when a voltage-glitch in a supply voltage (VDD) is detected. The GDB includes a voltage-glitch-detector coupled to a latch. The voltage-glitch-detector detects the voltage-glitch and generates a PULSE to the system-reset-block and latch. The latch receives the PULSE and generates a PULSE_LATCHED signal to the system-reset-block to ensure the reset-signal is generated no matter a width of the PULSE. In one embodiment, the latch includes a filter and a sample and hold circuit to power the latch, and ensure the PULSE_LATCHED signal is coupled to the system-reset-block when a voltage to the GDB or to the latch drops below a minimum voltage due to the voltage-glitch.
摘要:
An electronic system includes circuitry to detect errors in logic state in the system and to initiate corrective action when one or more errors are detected. In some embodiments, redundant information is stored within a system that is associated with an operational state of the system. If the operational state of the system is subsequently corrupted as a result of an electrical or mechanical overstress condition, resulting errors may be detected by comparing or otherwise processing the stored operational state information and the redundant information.
摘要:
A semiconductor device includes a load current path operable to carry a load current from a supply terminal having a supply voltage to an output circuit node. The device further includes a voltage comparator configured to compare the supply voltage with a voltage threshold and to signal a low supply voltage when the supply voltage reaches or falls below the voltage threshold. An over-current detector is configured to compare a load current signal that represents the load current with an over-current threshold and to signal an over-current when the load current signal reaches or exceeds the over-current threshold. Furthermore, the semiconductor device includes a control logic unit that is configured to deactivate the load current flow when an over-current is signalled and to reduce the over-current threshold from a first value to a lower second value as long as the voltage comparator signals a low supply voltage.
摘要:
A resume signal hold circuit holds an assertion of a resume signal instructed while the circuit block is in a stand-by mode. A resume signal mask circuit is provided between the circuit block and the resume signal hold circuit, and masks the signals while the circuit block is in the stand-by mode so that no signal can be input to the circuit block. A power saving control circuit causes the resume signal hold circuit to hold the assertion of the event signal and causes the resume signal mask circuit to mask the signals while the circuit block is in a stand-by mode. The power saving control circuit also causes the resume signal hold circuit to cancel the holding of the assertion of the resume signal after the completion of the resume setting of the circuit block and cancelling of the signal masking by the resume signal mask circuit.
摘要:
An inhibit circuit which produces an inhibit signal when a variation in a power supply potential is detected includes a comparator having a negative input connected to a generator producing a reference potential and a positive input connected to an output of a first image circuit producing a first potential that is an image of the power supply potential. The first image circuit includes a diode and a circuit for the production of a reference current parallel-connected between a common point to which the power supply potential is applied and an output of the first image circuit connected to the positive input of the comparator. The circuit has particular utility in portable integrated circuits with very low consumption when idle such as in mobile telephony.
摘要:
A control apparatus has a momentary switch. In response to an operation performed on a momentary switch, a latch circuit (13) switches a latch output signal to be outputted to a microcomputer (11) from nullhighnull to nulllownull and keeps the latch output signal nulllownull. A capacitor (C) supplies an electric power to the latch circuit (13) when supply of the electric power is cut off. A reset circuit (15) sends a signal to the latch circuit (13) in response to an input of a high-level latch reset signal from the microcomputer (11) so that the latch circuit (13) switches the latch output signal from nulllownull to nullhighnull. If the latch output signal is nullhighnull when the microcomputer (11) detects that the switch (SW) is operated, a transistor (Tr) is turned on under the control of the microcomputer (11). If the latch output signal is nulllownull when the microcomputer (11) detects that the switch (SW) is operated, the transistor (Tr) is turned off under the control of the microcomputer (11). The microcomputer (11) outputs the high-level latch reset signal to the reset circuit.
摘要:
A complementary MOS field effect transistor memory cell is described in which only four devices are interconnected to form a DC stable non-destructive readout circuit. Power consumption during the quiescent, or standby, state is minimum, being limited only by parasitic leakage current. High performance with minimum geometry are provided through the use of a variable source-tosubstrate bias which allows field effect devices to operate in enhancement and depletion mode during standby and selection times, respectively. An array of the cells may be arranged in a word-organized memory.
摘要:
A circuit to be used with a transistorized logic memory which will cause the memory to be retentive when input power to the memory is interrupted and may be used in complex logic circuits, e.g., counters, shift registers, etc., which operate at high rates of speed. The retentive memory function is achieved by supplying inputs to the memory through a bistable state reed relay which causes the bistable state of the memory to correspond to the bistable state of the reed relay when power to the memory is initiated and supplying the outputs of the memory to the inputs of the reed relay which causes the bistable state of the reed relay to correspond to the bistable state of the memory when power to the memory is interrupted. The circuit is also arranged to prevent operation of the reed relay when the voltage of the direct current power source for the logic system is normal.
摘要:
A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n-1, and the third number is 1, the total number of resistors is 2n.