Abstract:
A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid and the liquid composition to a temperature selected such that the nanostructures are segregated from the surfactant and assemble into a nanowire structure on the surface.
Abstract:
A fabricating method of an electron-emitting device includes at least the following steps. A substrate having a first side and a second side is provided. The first side is opposite to the second side. A first electrode pattern layer is formed on the first side of the substrate. A conductive pattern layer is formed on the substrate and the first electrode pattern layer, and the conductive pattern layer partially covers the first electrode pattern layer. An electron-emitting region is formed in the conductive pattern layer. A second electrode pattern layer is formed on the second side of the substrate. The second electrode pattern layer partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.
Abstract:
A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid and the liquid composition to a temperature selected such that the nanostructures are segregated from the surfactant and assemble into a nanowire structure on the surface.
Abstract:
An image display apparatus according to the present invention comprises a plurality of electron emitting devices having an electron emitting portion provided between a cathode electrode and a gate electrode; a cathode wiring connected to the cathode electrode; and a gate wiring connected to the gate electrode and having a resistance higher than the resistance of the cathode wiring, wherein an impedance element having a resistance value of Ry and an electrostatic capacitance of Cy is connected to between the cathode wiring and the cathode electrode, a resistive element having a resistance value of Rx is connected to between the gate wiring and the gate electrode, and |Ry/(1+jωRyCy)| Rx are satisfied, where ω is 100 MHz.
Abstract translation:根据本发明的图像显示装置包括多个电子发射器件,其具有设置在阴极电极和栅电极之间的电子发射部分; 连接到阴极电极的阴极布线; 以及栅极布线,其与栅电极连接并且具有比阴极布线的电阻高的电阻,其中在阴极布线和阴极之间连接具有电阻值Ry的阻抗元件和Cy的静电电容, 电阻值为Rx的电阻元件连接到栅极布线和栅电极之间,并且满足| Ry /(1 +jωRyCy)| Rx,其中ω为100MHz。
Abstract:
An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the gird, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, and the electron emitter includes a first end, a second end and a gap. At least one electron emission end is located in the gap.
Abstract:
An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229±0.5 eV and a sub peak having a peak top in the range of 228.1±0.3 eV.
Abstract:
A convex portion 2 having a specific sectional shape is formed on a substrate 1 between electrodes 3 and 4, and a gap 6 is formed on a conductive film 5, connecting the electrodes 3 and 4, on the convex portion 2, whereby the distance from the center of the gap 6 serving as a electron-emitting portion to the stagnation point is reduced so as to enhance an electron emission efficiency.
Abstract:
An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.
Abstract:
A plurality of electron-emitting devices arranged in a matrix, a row wiring that connects electron-emitting portions of electron-emitting devices arranged in the same line to one another, and a column wiring that connects gate connection members of electron-emitting devices arranged in the same column to one another are included. Each of the plurality of gates is positioned at one side of an electron-emitting portion in an arrangement direction in which the plurality of electron-emitting portions are arranged.
Abstract:
As many protrusions as possible that contribute to electron emission are formed in a controlled manner and the protrusions are easily formed over a large area in a controlled manner. A conductive film composed of a conductive material constituting a cathode is formed by sputtering at a total pressure of 1.0 Pa or more and 2.8 Pa or less, and etching treatment is performed on the conductive film to form the cathode having a plurality of protrusions on the surface thereof.