摘要:
Deformation of a gate by Coulomb force generated when operating an electron-emitting device is inhibited by appropriately maintaining relationship between film thickness h of the gate and distance L from an outer surface of an insulating member to an inner surface of a concave portion. According to this, in an electron beam apparatus provided with a laminate-type electron-emitting device, the deformation of the gate is prevented to reduce variation in electron emission characteristics, thereby preventing the element from being broken.
摘要:
In an electron beam apparatus including an electron emission element and an anode, the electron emission element includes a gate 5 and a cathode 6 having a projection portion. The gate 5 and the cathode 6 are located in a surface of an insulating member 3 including a recess 7. The projection portion of the cathode 6 has a height distribution, and an average value dav (m) of a shortest distance between the gate 5 and the projection portion of the cathode 6 and a difference h (m) between the average value dav and a shortest distance dmin (m) from the gate 5 to a maximum convex portion of the projection portion of the cathode 6 satisfy a relationship of h/dav
摘要:
The invention provides an electron beam apparatus having: a rear plate having a plurality of electron-emitting devices each provided with a device electrode, and a plurality of wirings connected to the device electrodes; and a face plate being provided with an anode electrode, and being arranged in opposition to the rear plate so as to be irradiated with an electron emitted from the electron-emitting device, wherein the device electrode is electrically connected to the wiring through an additional electrode, and the additional electrode is formed from an electroconductive material of which phase transition from a solid phase directly into a vapor phase is caused at a temperature not lower than a melting point of the device electrode within an evacuated atmosphere.
摘要:
An image forming apparatus in which a first substrate provided with an electron-emitting device and an image displaying member which electrons emitted from the electron-emitting device irradiate are arranged to be opposed is provided with a deflecting means deflecting the electrons emitted from the electron-emitting device and a trapping unit trapping an inert gas ionized by the electrons. Thereby, the damages of the electron-emitting device by the inert gas are prevented, and the life of an image display apparatus is aimed to be elongated.
摘要:
A convex portion 2 having a specific sectional shape is formed on a substrate 1 between electrodes 3 and 4, and a gap 6 is formed on a conductive film 5, connecting the electrodes 3 and 4, on the convex portion 2, whereby the distance from the center of the gap 6 serving as a electron-emitting portion to the stagnation point is reduced so as to enhance an electron emission efficiency.
摘要:
A manufacturing method of an electron-emitting device according to the present invention includes the steps of: preparing a substrate having a first electrode and a second electrode, and a conductive film for connecting the first electrode and the second electrode; and forming a gap on the conductive film by applying a voltage between the first electrode and the second electrode; wherein a planar shape of the conductive film has a V-shape portion between the first electrode and the second electrode.
摘要:
A method according to the present invention is for electrifying a plurality of electric conductors arranged on a substrate including the step of setting an average temperature difference during electrifying processing between a region S0 in that the plurality of electric conductors on the substrate are arranged and a circumferential region S1 of the region S0 at 15° C. or more, and the substrate satisfies the relational expression: L1/L0>EαΔT/σth−1. where L0[m]: the width of the region S0 L1[m]: the width of the region S1 ΔT[K]: the average temperature difference E[Pa]: the Young's modulus of the substrate α[/K]: the coefficient of linear thermal expansion of the substrate σth[Pa]: the material constant of the substrate
摘要:
A light emitting apparatus includes a plurality of light emitting devices including luminous bodies, and a plurality of resistors made of the same material having negative resistance-temperature characteristics, the plurality of resistors being connected respectively in series to the plurality of light emitting devices. When the plurality of resisters are at the same temperature, one or ones among the plurality of resistors, which exhibit higher temperatures during driving, have larger resistance values than other among the plurality of resistors, which exhibit lower temperatures during the driving.
摘要:
A three-dimensional structure forming a space in which a wiring-side portion of a device electrode is located is arranged on a rear plate. A surface potential of the three-dimensional structure is defined so that an electric field intensity of the space becomes weaker than an average electric field intensity expressed below, average electric field intensity=Va/d, where Va is application voltage of an anode electrode, and d is an interval between a rear plate and the face plate. The device electrode includes a high-temperature portion where temperature locally rises when current flows through the device electrode. The high-temperature portion is positioned in the space or at a distance of less than or equal to 20 μm from the space.
摘要:
There provided is an electron beam apparatus of preventing surface creeping discharge from newly arising due to discharge that arises between an anode electrode and an electron-emitting device. In an electron-emitting device including a scan signal device electrode and an information signal device electrode, a portion of the scan signal device electrode is covered by an insulating layer of insulating scan signal wiring from information signal wiring, an additional electrode is connected to the scan signal device electrode at an end portion of the insulating layer and the additional electrode is configured so that energy Ee being lost due to melting of the additional electrode is larger than energy Ea of discharge current flowing in to the electron-emitting device.