Apparatus and method for correcting an error in data transmission of a data processing system

    公开(公告)号:US12125549B2

    公开(公告)日:2024-10-22

    申请号:US18362978

    申请日:2023-08-01

    申请人: MIMIRIP LLC

    发明人: In Jong Jang

    摘要: A data processing system includes a controller configured to receive a first encoded data item and a write request from a host, the first encoded data item being encoded based on a hamming code. The controller is further configured to store the first encoded data item in a write buffer, decode the first encoded data item stored in the write buffer based on the hamming code to detect and correct a first error in the first encoded data item to obtain a first error-corrected data item, encode the first error-corrected data item based on an error correction code to generate a second encoded data item, and transmit the second encoded data item to program the second encoded data item in a non-volatile memory device.

    TEST METHOD FOR TESTING DECISION FEEDBACK EQUALIZATION OF MEMORY DEVICE

    公开(公告)号:US20240331791A1

    公开(公告)日:2024-10-03

    申请号:US18193645

    申请日:2023-03-31

    发明人: Yi-Hsuan Chu

    IPC分类号: G11C29/36 G11C29/12 G11C29/46

    摘要: A test method is for testing a decision feedback equalization (DFE) of a memory device is provided. The memory device includes a memory bank. The test method includes: providing a first test data pattern having a first data transition frequency and a second test data pattern having a second data transition frequency different from the first data transition frequency; writing the first test data pattern into a first memory section of the memory bank with a first DFE; writing the second test data pattern into a second memory section of the memory bank with the first DFE; reading a first reading data pattern stored in the first memory section and a second reading data pattern stored in the second memory section; and generating a test result signal according to the first reading data pattern and the second reading data pattern.

    SYSTEM AND METHOD FOR CONDUCTING BUILT-IN SELF-TEST OF MEMORY MACRO

    公开(公告)号:US20240321377A1

    公开(公告)日:2024-09-26

    申请号:US18737631

    申请日:2024-06-07

    IPC分类号: G11C29/38 G11C29/36

    CPC分类号: G11C29/38 G11C29/36

    摘要: Performing a built-in self-test (BIST) on a memory macro includes generating a plurality of input vectors. One input vector is transmitted to the memory macro in each of a plurality of cycles. Each of the plurality of input vectors is associated with a bit width. Generating the input vector includes generating a partial input vector of half the bit width and transmitting the partial input vector to each of a first half of the memory macro and a second half of the memory macro. The method also includes receiving, in each of the plurality of cycles, an output data from the memory macro, such that the output data is generated by the memory macro in response to processing the partial input vector, comparing the output data with a signature value, and determining whether the memory macro is normal or faulty based upon the comparison.

    SEMICONDUCTOR DEVICE FOR DETECTING DEFECT IN WORD LINE DRIVER

    公开(公告)号:US20240290415A1

    公开(公告)日:2024-08-29

    申请号:US18341607

    申请日:2023-06-26

    申请人: SK hynix Inc.

    发明人: Byeong Cheol LEE

    IPC分类号: G11C29/46 G11C29/36

    摘要: A semiconductor device includes a test control circuit configured to enter a test mode and configured to generate a test word line precharge signal, based on a test mode entry signal, an active pulse, a precharge pulse, a reset signal, and a test code; a mat including a plurality of word line drivers; and a word line control circuit configured to generate a word line driving signal, a plurality of voltage driving signals, and a plurality of voltage discharge signals for controlling operations of the plurality of word line drivers, based on the test word line precharge signal, a mat enable signal, and a plurality of internal addresses. The word line driving signal is a signal that is enabled after a start of an active operation and that is disabled after a set period from timing for a precharge operation.

    Testing disruptive memories
    5.
    发明授权

    公开(公告)号:US12051476B2

    公开(公告)日:2024-07-30

    申请号:US17662862

    申请日:2022-05-11

    申请人: NXP USA, Inc.

    摘要: Memory built-in self-test (MBIST) circuitry for a disruptive memory includes an address sequencer configured to select an address with the disruptive memory as a test location, and control circuitry configured to direct a test sequence including a plurality of test operations on the test location. The control circuitry includes a first fault counter and a second fault counter, in which the control circuitry is configured to, after each test operation of the test sequence, determine whether to selectively update a first fault counter and whether to selectively update a second fault counter. The address sequencer, after completion of the test sequence, selects a next address within the disruptive memory as a next test location.

    METHOD, DEVICE, AND CIRCUIT FOR HIGH-SPEED MEMORIES

    公开(公告)号:US20240153573A1

    公开(公告)日:2024-05-09

    申请号:US18411822

    申请日:2024-01-12

    IPC分类号: G11C29/12 G11C29/36 G11C29/46

    摘要: In some aspects of the present disclosure, a memory device is disclosed. In some aspects, the memory device includes a plurality of memory cells arranged in an array, an input/output (I/O) interface connected to the plurality of memory cells to output data signal from each memory cell, and a control circuit. In some embodiments, the control circuit includes a first clock generator to generate a first clock signal and a second clock signal according to an input clock signal and a chip enable (CE) signal and provide the first clock signal to the plurality of memory cells. In some embodiments, the control circuit includes a second clock generator to generate a third clock signal according to the input clock signal and a DFT (design for testability) enable signal. In some embodiments, the control circuit generates an output clock signal according to the second clock signal or the third clock signal.