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    DYNAMIC COMPENSATION IN ADVANCED PROCESS CONTROL
    1.
    发明申请
    DYNAMIC COMPENSATION IN ADVANCED PROCESS CONTROL 有权
    高级过程控制中的动态补偿

    公开(公告)号：US20110238197A1

    公开(公告)日：2011-09-29

    申请号：US12731348

    申请日：2010-03-25

    申请人： Chih-Wei Hsu ,  Jin-Ning Sung ,  Shin-Rung Lu ,  Jong-I Mou

    发明人： Chih-Wei Hsu ,  Jin-Ning Sung ,  Shin-Rung Lu ,  Jong-I Mou

    IPC分类号： G05B13/04 ,  G06F17/00

    CPC分类号： G05B19/41875 ,  G05B2219/32017 ,  G05B2219/32189 ,  G05B2219/45031 ,  Y02P90/22

    摘要： A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter.

    摘要翻译： 提供了一种半导体制造方法。 该方法包括提供晶片的器件参数的模型作为第一和第二工艺参数的函数。 第一和第二工艺参数分别对应于不同的晶片特性。 该方法包括基于设备参数的指定目标值导出第一和第二处理参数的目标值。 该方法包括响应于第一过程参数的目标值执行第一制造过程。 该方法包括此后测量第一处理参数的实际值。 该方法包括使用第一过程参数的实际值更新模型。 该方法包括使用更新的模型导出第二过程参数的修正目标值。 该方法包括响应于修改的第二过程参数的目标值执行第二制造过程。

    METHOD AND DEVICE FOR DETERMINING CENTER HOLE OF CRANKSHAFT
    2.
    发明申请
    METHOD AND DEVICE FOR DETERMINING CENTER HOLE OF CRANKSHAFT 有权
    用于确定起重机中心孔的方法和装置

    公开(公告)号：US20110071806A1

    公开(公告)日：2011-03-24

    申请号：US12993860

    申请日：2009-06-25

    申请人： Akihiro Yoshimoto

    发明人： Akihiro Yoshimoto

    IPC分类号： G06F17/50

    CPC分类号： F16C3/08 ,  B23P2700/07 ,  G01M1/10 ,  G01M1/24 ,  G05B19/401 ,  G05B19/4097 ,  G05B2219/32189 ,  G05B2219/37205 ,  Y02P90/22 ,  Y02P90/265

    摘要： A method of determining a center hole of a material crankshaft, which is obtained through molding with first and second molds, includes: obtaining first shape data of a first portion of the material crankshaft molded by the first mold and second shape data of a second portion of the material crankshaft molded by the second mold; comparing the first and second shape data respectively with first and second designed data corresponding to the first and second molds, respectively, for computing a misalignment amount of each of the first and second portions due to misalignment between the first and second molds; adjusting, based on the misalignment amount, data corresponding to the misalignment amount to reproduce actual shape data; and determining, based on the actual shape data, a position of the center hole in the material crankshaft such that a rotation balance of the material crankshaft is within a predetermined range.

    摘要翻译： 一种确定通过第一和第二模具成型获得的曲轴坯料的中心孔的方法，包括：获得由第一模具模拟的曲轴的曲轴的第一部分的第一形状数据和第二部分的第二形状数据 由第二模具模制的曲轴材料; 分别比较第一和第二形状数据与第一和第二模具对应的第一和第二设计数据，以计算由于第一和第二模具之间的未对准而导致的第一和第二部分中的每一个的不对准量; 基于所述未对准量调整与所述未对准量对应的数据，以再现实际形状数据; 并且基于实际形状数据确定曲轴坯料中的中心孔的位置，使得曲轴坯料的旋转平衡在预定范围内。

    Manufacturing methods and systems for rapid production of hearing-aid shells
    3.
    发明授权
    Manufacturing methods and systems for rapid production of hearing-aid shells 有权
    助听器快速生产的制造方法和系统

    公开(公告)号：US07328080B2

    公开(公告)日：2008-02-05

    申请号：US10162434

    申请日：2002-06-03

    申请人： Ping Fu ,  Dmitry Nekhayev ,  Herbert Edelsbrunner ,  G. Yates Fletcher ,  Tobias Gloth

    发明人： Ping Fu ,  Dmitry Nekhayev ,  Herbert Edelsbrunner ,  G. Yates Fletcher ,  Tobias Gloth

    IPC分类号： G06F19/00

    CPC分类号： H04R25/658 ,  B29C64/00 ,  B33Y50/00 ,  B33Y50/02 ,  B33Y80/00 ,  G05B19/4099 ,  G05B2219/32189 ,  G05B2219/45172 ,  G05B2219/49008 ,  H04R25/652 ,  H04R2225/77 ,  H04R2460/11

    摘要： Methods, apparatus and computer program products provide efficient techniques for designing and printing shells of hearing-aid devices with a high degree of quality assurance and reliability and with a reduced number of manual and time consuming production steps and operations. These techniques also preferably provide hearing-aid shells having internal volumes that can approach a maximum allowable ratio of internal volume relative to external volume. These high internal volumes facilitate the inclusion of hearing-aid electrical components having higher degrees of functionality and/or the use of smaller and less conspicuous hearing-aid shells. A preferred method includes operations to generate a watertight digital model of a hearing-aid shell by thickening a three-dimensional digital model of a shell surface in a manner that eliminates self-intersections and results in a thickened model having an internal volume that is a high percentage of an external volume of the model. This thickening operation preferably includes nonuniformly thickening the digital model of a shell surface about a directed path that identifies a location of an undersurface hearing-aid vent. This directed path may be drawn on the shell surface by a technician (e.g., audiologist) or computer-aided design operator, for example. Operations are then preferably performed to generate a digital model of an undersurface hearing-aid vent in the thickened model of the shell surface, at a location proximate the directed path.

    摘要翻译： 方法，装置和计算机程序产品提供高效的技术，用于设计和打印具有高度质量保证和可靠性以及减少手动和耗时的生产步骤和操作的助听器装置的外壳。 这些技术还优选地提供具有能够接近相对于外部体积的内部体积的最大允许比率的内部容积的助听器壳体。 这些高内部容积便于包含具有更高程度功能的助听器电气部件和/或使用较小和不太显眼的助听器外壳。 优选的方法包括通过以消除自相交的方式增加壳表面的三维数字模型来产生助听器外壳的水密数字模型的操作，并且导致具有内部容积为 模型外部体积的百分比很高。 这种增稠操作优选地包括不规则地增厚围绕指示路径的壳表面的数字模型，其指示下表面助听器通风口的位置。 例如，技术人员（例如，听力学家）或计算机辅助设计操作者可以在壳体表面上绘制该定向路径。 然后优选执行操作以在靠近定向路径的位置处在壳表面的增厚模型中产生下表面助听器通气口的数字模型。

    Diagnostic method for manufacturing processes
    4.
    发明授权
    Diagnostic method for manufacturing processes 有权

    公开(公告)号：US06859756B2

    公开(公告)日：2005-02-22

    申请号：US10236450

    申请日：2002-09-06

    申请人： John R. Allen

    发明人： John R. Allen

    IPC分类号： G05B19/401 ,  G05B23/02 ,  G06F15/46

    CPC分类号： G05B19/401 ,  B65G2207/14 ,  G05B19/41875 ,  G05B2219/32189 ,  G05B2219/32221 ,  G05B2219/32222 ,  G05B2219/35223 ,  G05B2219/37617 ,  Y02P90/22

    摘要： A method for use in a system for diagnosing the causes of manufacturing defects involves process characterization. A set of forms is identified for a workpiece and for a piece of manufacturing equipment that acts upon the workpiece. The forms for the workpiece are preferably a hierarchic set of geometric forms. Each such geometric form corresponds to an aspect of the action of the manufacturing equipment upon the workpiece. A plurality of measurements is made on a defective workpiece following the hierarchical order of forms. The measurements are compared to a reference datum, and a deviation from the datum is computed. If the deviation exceeds a preselected threshold, an alert condition results, attributable to the action of the manufacturing equipment. Targeted adjustment corresponding to the action that caused the defect can then be made to the equipment.

    Semiconductor processing module with integrated feedback/feed forward metrology
    5.
    发明申请
    Semiconductor processing module with integrated feedback/feed forward metrology 失效
    具有综合反馈/前馈测量的半导体处理模块

    公开(公告)号：US20020155629A1

    公开(公告)日：2002-10-24

    申请号：US09901462

    申请日：2001-07-10

    发明人： Kevin P. Fairbairn ,  Bo Su

    IPC分类号： H01L021/66 ,  G01R031/26 ,  C23F001/00 ,  C23C016/00

    CPC分类号： H01L21/67253 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G05B2219/32182 ,  G05B2219/32189 ,  G05B2219/45031 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/22 ,  H01L2924/00

    摘要： A method and apparatus for processing a semiconductor wafer to reduce CD variation feeds back information gathered during inspection of the wafer to a previously visited processing tool and feeds forward information to adjust the next process the wafer will undergo. The inspection and processing are performed at a single processing module without exposing the wafer to ambient atmospheric conditions. Embodiments include removing a wafer from a wafer cassette, and measuring a dimension of a feature on the surface of the wafer, such as the feature's CD using an optical measuring tool. A process, such as an etch process, is then performed on the wafer using a set of process parameter values, such as an etch recipe, selected based on the CD measurement, and the wafer is returned to a cassette. The CD measurements are also linked to photolithography adjustable parameters such as stepper focus and exposure settings. The linked information on focus and exposure is fed back to the previously visited photo cell so the stepper can be adjusted, either automatically or at the user's discretion, to correct the deviation in following lots. In some embodiments, post-etch processing, such as ash stripping, wet cleaning and/or further CD measurement, are performed by the module before the wafer is returned to a cassette. All of the transfer and processing steps performed by the module are performed in a clean environment, thereby increasing yield by avoiding exposing the wafer to the atmosphere and possible contamination between steps. This feedback and feed-forward mechanism improves CD control by adjusting processing parameters for every wafer based on the wafer's measured CD.

    摘要翻译： 用于处理半导体晶片以减少CD变化的方法和装置将在晶片检查期间收集的信息反馈到先前访问的处理工具，并且提供前馈信息以调整晶片将经历的下一个处理。 检查和处理在单个处理模块中进行，而不会将晶片暴露于环境大气条件。 实施例包括从晶片盒移除晶片，以及使用光学测量工具测量诸如特征的CD的晶片表面上的特征的尺寸。 然后使用一组基于CD测量选择的工艺参数值（例如蚀刻配方）在晶片上执行诸如蚀刻工艺的工艺，并且将晶片返回到盒中。 CD测量也与光刻可调参数（如步进焦点和曝光设置）相关联。 关于焦点和曝光的链接信息反馈到先前访问过的光电池，以便可以自动或根据用户的判断来调整步进器，以纠正以下批次中的偏差。 在一些实施例中，在晶片返回到盒之前，通过模块执行蚀刻后处理，例如灰分剥离，湿清洗和/或进一步的CD测量。 模块执行的所有转移和处理步骤都在干净的环境中进行，从而通过避免将晶片暴露在大气中并在步骤之间可能的污染来提高产量。 该反馈和前馈机制通过基于晶片的测量CD调整每个晶片的处理参数来改善CD控制。

    ADAPTIVE AND AUTOMATIC DETERMINATION OF SYSTEM PARAMETERS
    10.
    发明申请
    ADAPTIVE AND AUTOMATIC DETERMINATION OF SYSTEM PARAMETERS 有权
    自适应和自动确定系统参数

    公开(公告)号：US20140074258A1

    公开(公告)日：2014-03-13

    申请号：US14081188

    申请日：2013-11-15

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Po-Feng TSAI ,  Chia-Tong HO ,  Sunny WU ,  Jo Fei WANG ,  Jong-I MOU

    IPC分类号： G05B13/02

    CPC分类号： G05B13/0265 ,  G05B19/41875 ,  G05B2219/32188 ,  G05B2219/32189 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/86

    摘要： A method of automatically determining process parameters for processing equipment includes processing at least one first substrate in the processing equipment at a first time; and processing at least one second substrate in the processing equipment at a second time. The method includes collecting data on process monitors for the at least one first substrate; and the at least one second substrate. The method includes receiving the data by a multiple-input-multiple-output (MIMO) optimization system. The method includes revising a sensitivity matrix, by a MIMO optimizer, using the data and an adaptive-learning algorithm, wherein the adaptive-learning algorithm revises the sensitivity matrix based on a learning parameter which is related to a rate of change of the processing equipment over time. The method includes determining a set of process parameters for the processing equipment by the MIMO optimizer, wherein the MIMO optimizer uses the revised sensitivity matrix to determine the process parameters.

    摘要翻译： 自动确定处理设备的处理参数的方法包括：在第一时间处理处理设备中的至少一个第一基板; 以及在所述处理设备中的第二时间处理至少一个第二基板。 该方法包括收集关于至少一个第一衬底的过程监视器的数据; 和至少一个第二基底。 该方法包括通过多输入多输出（MIMO）优化系统接收数据。 该方法包括通过MIMO优化器使用数据和自适应学习算法修改灵敏度矩阵，其中自适应学习算法基于与处理设备的变化率相关的学习参数来修改灵敏度矩阵 随着时间的推移。 该方法包括由MIMO优化器确定处理设备的一组过程参数，其中MIMO优化器使用修正的灵敏度矩阵来确定过程参数。