公开(公告)号：US20140041414A1

公开(公告)日：2014-02-13

申请号：US14058697

申请日：2013-10-21

Applicant: Inductotherm Corp.

Inventor： Oleg S. FISHMAN

IPC: C01B33/021

CPC classification number: C01B33/021 ,  C01B33/02 ,  C01B33/023 ,  C01B33/039 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B28/06 ,  C30B28/08 ,  C30B28/10 ,  C30B29/06

Abstract: Solid or semi-solid feedstock is melted in an open bottom electric induction cold crucible furnace. Directionally solidified multi-crystalline solid purified material continuously exits the bottom of the furnace and may optionally pass through a thermal conditioning chamber before being gravity fed into a transport mold where an ingot of the purified multi-crystalline solid material is transported to a remote holding area after the transport mold is filled with the multi-crystalline material and cut from the continuous supply of material. Cool down of the ingot is accomplished remote from the open bottom of the electric induction cold crucible furnace.

Abstract translation: 固体或半固体原料在开口底部电感冷坩埚炉中熔化。 定向凝固的多晶固体纯化材料连续地离开炉底，并且可以选择性地通过热调节室，然后重力加入到运输模具中，其中纯化的多晶固体材料的锭被输送到远程保持区域 运输模具填充多晶材料后，从连续供料中切割。 铸锭的冷却是远离电动感应冷坩埚炉的开口底部完成的。

公开(公告)号：US20110180765A1

公开(公告)日：2011-07-28

申请号：US13040783

申请日：2011-03-04

Applicant: Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

Inventor： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

IPC: H01B1/04

CPC classification number: H01B1/04 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B28/08 ,  C30B29/36 ,  H01B1/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608 ,  Y10S438/931

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract translation: 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

公开(公告)号：US20070007242A1

公开(公告)日：2007-01-11

申请号：US11373771

申请日：2006-03-10

Applicant: James Im

Inventor： James Im

IPC: H01L21/306 ,  B44C1/22 ,  C23F1/00

CPC classification number: H01L21/02686 ,  C03C23/0025 ,  C30B28/00 ,  C30B28/08 ,  C30B35/00 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

Abstract: System and method generating a polycrystalline thin film with a particular crystalline orientation for use as thin film transistors, microelectronic devices and the like. In one exemplary embodiment, a polycrystalline silicon thin film that has a substantially uniform crystalline orientation is produced so that its crystals are provided in at least one direction. The crystalline orientation may be any low index orientation and may be achieved with sequential lateral solidification. The polycrystalline thin film may then be crystallized in a direction that is perpendicular to the first direction by, e.g., a sequential lateral solidification procedure so that the crystalline orientation is approximately the same as the first direction, and is substantially uniform in all directions.

Abstract translation: 产生具有特定晶体取向的多晶薄膜用作薄膜晶体管，微电子器件等的系统和方法。 在一个示例性实施例中，制造具有基本均匀的晶体取向的多晶硅薄膜，使得其晶体沿至少一个方向设置。 结晶取向可以是任何低指数取向，并且可以通过顺序侧向固化来实现。 然后可以通过例如顺序的侧向固化程序在垂直于第一方向的方向上结晶多晶薄膜，使得晶体取向与第一方向大致相同，并且在所有方向上基本上均匀。

公开(公告)号：US3424629A

公开(公告)日：1969-01-28

申请号：US3424629D

申请日：1965-12-13

Applicant: IBM

Inventor： ERNST ERIC O ,  HURD DONALD J ,  SEELEY GERARD

IPC: C23C16/00 ,  C30B23/00 ,  C30B25/08 ,  C30B28/08 ,  H01L21/00 ,  H01L21/20 ,  H01L7/36

CPC classification number: H01L21/00 ,  C23C16/00 ,  C30B23/00 ,  C30B25/08 ,  C30B28/08 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

公开(公告)号：US20160284562A1

公开(公告)日：2016-09-29

申请号：US15081836

申请日：2016-03-25

Applicant: AP SYSTEMS INC.

Inventor： Pil Seong JEONG ,  Sang Hyun JI ,  Sung Yong LEE ,  Yong Woo HAN

IPC: H01L21/324 ,  H01L21/477 ,  C30B29/06 ,  C23C16/56 ,  C23C16/24 ,  C30B28/08 ,  H01L21/67 ,  H01L29/66

CPC classification number: C30B29/06 ,  C23C16/24 ,  C23C16/46 ,  C23C16/56 ,  C30B28/08 ,  H01L21/67115 ,  H01L27/1285 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765

Abstract: The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.

Abstract translation: 本公开控制热源单元，使得其中形成有含氢待处理层的被处理物体被两次照射，因此半导体器件的电特性可以是 抑制和防止由于氢而劣化。 也就是说，首先辐射的紫外线（UV）可能引起用于分离被处理层中的Si-H键的化学反应，并且第二次辐射的红外光（IR）可能引起热反应， 从Si-H键分离出氢。 因此，进行用于分离待处理层中的氢和其它离子的键的化学反应和用于汽化氢的热反应，因此氢可以比从氢气蒸发的温度更容易地除去 待处理层仅通过热反应。

公开(公告)号：US09099386B2

公开(公告)日：2015-08-04

申请号：US13785400

申请日：2013-03-05

Applicant: Kabushiki Kaisha Toshiba

Inventor： Tsutomu Kakuno ,  Ryuichi Togawa ,  Hiroshi Ito

IPC: H01L21/20 ,  H01L21/263 ,  B23K26/00 ,  B23K26/073 ,  B23K26/08 ,  C30B1/02 ,  C30B28/08 ,  C30B29/06 ,  C30B35/00 ,  H01L21/268

CPC classification number: H01L21/2636 ,  B23K26/0738 ,  B23K26/083 ,  B23K26/352 ,  C30B1/02 ,  C30B1/023 ,  C30B28/08 ,  C30B29/06 ,  C30B35/00 ,  H01L21/268

Abstract: According to one embodiment, a laser annealing method includes: detecting an intensity distribution of a laser light formed as a line beam by a line beam optical system; dividing width in short axis direction of the line beam in the detected intensity distribution by number of times of the irradiation per one site and partitioning the width; and calculating increment of crystal grain size of a non-crystalline thin film for energy density corresponding to wave height of the partitioned intensity distribution, and summing the increments by number of times of pulse irradiation, when energy density of the laser light is larger than a threshold, the crystal grain size of the non-crystalline thin film taking a downward turn at the threshold, the increment summed before the energy density exceeds the threshold being set to zero.

Abstract translation: 根据一个实施例，激光退火方法包括：通过线束光学系统检测形成为线束的激光的强度分布; 将检测出的强度分布中的线束的短轴方向的宽度分割为每个部位的照射次数，并分割宽度; 以及计算对应于分割强度分布的波高的能量密度的非晶体薄膜的晶粒尺寸的增量，并且当激光的能量密度大于 阈值时，非晶体薄膜的晶体尺寸在阈值处呈向下转动，在能量密度超过阈值之前相加的增量被设置为零。

公开(公告)号：US08673254B2

公开(公告)日：2014-03-18

申请号：US13040783

申请日：2011-03-04

Applicant: Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

Inventor： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

IPC: C30B29/36

CPC classification number: H01B1/04 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B28/08 ,  C30B29/36 ,  H01B1/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608 ,  Y10S438/931

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract translation: 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

公开(公告)号：US08426296B2

公开(公告)日：2013-04-23

申请号：US13219960

申请日：2011-08-29

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  C30B28/08 ,  H01L21/02532 ,  H01L27/1285

Abstract: The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for making a textured thin film includes providing a precursor film on a substrate, the film includes crystal grains having a surface texture and a non-uniform degree of texture throughout the thickness of the film, wherein at least a portion of the this substrate is transparent to laser irradiation; and irradiating the textured precursor film through the substrate using a pulsed laser crystallization technique at least partially melt the film wherein the irradiated film crystallizes upon cooling to form crystal grains having a uniform degree of texture.

Abstract translation: 所公开的主题涉及用于制备外延织构化多晶膜的系统和方法。 在一个或多个实施例中，用于制造纹理化薄膜的方法包括在基底上提供前体膜，该膜包括在膜的整个厚度上具有表面纹理和不均匀质地程度的晶粒，其中至少 该基板的一部分对激光照射是透明的; 并且使用脉冲激光结晶技术通过衬底照射织构化的前体膜，至少部分地熔化其中所述被照射的膜在冷却时结晶以形成具有均匀织构的晶粒的膜。

公开(公告)号：US08012861B2

公开(公告)日：2011-09-06

申请号：US12275720

申请日：2008-11-21

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/20

CPC classification number: C23C16/56 ,  C23C14/5813 ,  C30B28/06 ,  C30B28/08 ,  H01L21/02595 ,  H01L21/02686 ,  H01L27/1285

Abstract: The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for making a textured thin film includes providing a precursor film on a substrate, the film includes crystal grains having a surface texture and a non-uniform degree of texture throughout the thickness of the film, wherein at least a portion of the this substrate is transparent to laser irradiation; and irradiating the textured precursor film through the substrate using a pulsed laser crystallization technique at least partially melt the film wherein the irradiated film crystallizes upon cooling to form crystal grains having a uniform degree of texture.

Abstract translation: 所公开的主题涉及用于制备外延织构化多晶膜的系统和方法。 在一个或多个实施例中，用于制造纹理化薄膜的方法包括在基底上提供前体膜，该膜包括在膜的整个厚度上具有表面纹理和不均匀质地程度的晶粒，其中至少 该基板的一部分对激光照射是透明的; 并且使用脉冲激光结晶技术通过衬底照射织构化的前体膜，至少部分地熔化其中所述被照射的膜在冷却时结晶以形成具有均匀织构的晶粒的膜。

公开(公告)号：US20090137105A1

公开(公告)日：2009-05-28

申请号：US12275720

申请日：2008-11-21

Applicant: James S. IM

Inventor： James S. IM

IPC: H01L21/20 ,  B05C11/00 ,  C23C14/32

CPC classification number: C23C16/56 ,  C23C14/5813 ,  C30B28/06 ,  C30B28/08 ,  H01L21/02595 ,  H01L21/02686 ,  H01L27/1285

Abstract: The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for making a textured thin film includes providing a precursor film on a substrate, the film includes crystal grains having a surface texture and a non-uniform degree of texture throughout the thickness of the film, wherein at least a portion of the this substrate is transparent to laser irradiation; and irradiating the textured precursor film through the substrate using a pulsed laser crystallization technique at least partially melt the film wherein the irradiated film crystallizes upon cooling to form crystal grains having a uniform degree of texture.

Abstract translation: 所公开的主题涉及用于制备外延织构化多晶膜的系统和方法。 在一个或多个实施例中，用于制造纹理化薄膜的方法包括在基底上提供前体膜，该膜包括在膜的整个厚度上具有表面纹理和不均匀质地程度的晶粒，其中至少 该基板的一部分对激光照射是透明的; 并且使用脉冲激光结晶技术通过衬底照射织构化的前体膜，至少部分地熔化其中所述被照射的膜在冷却时结晶以形成具有均匀织构的晶粒的膜。