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    Components for substrate processing apparatus and manufacturing method thereof
    3.
    发明授权
    Components for substrate processing apparatus and manufacturing method thereof 有权
    基板处理装置用部件及其制造方法

    公开(公告)号：US08058186B2

    公开(公告)日：2011-11-15

    申请号：US11270671

    申请日：2005-11-10

    申请人： Tsuyoshi Moriya ,  Kouji Mitsuhashi ,  Akira Uedono

    发明人： Tsuyoshi Moriya ,  Kouji Mitsuhashi ,  Akira Uedono

    IPC分类号： H01L21/26

    CPC分类号： C04B41/0054 ,  C04B41/009 ,  C04B41/80 ,  H01J37/32642 ,  C04B41/00 ,  C04B35/565

    摘要： A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the impurities are introduced to void-like defects existing in the vicinity of a surface of the focus ring. Subsequently, positrons are injected in the vicinity of the surface of the focus ring into which the impurities are introduced, and the defect density in the vicinity of the surface of the focus ring is detected by the positron annihilation method.

    摘要翻译： 通过切断通过烧结法或CVD法形成的碳化硅本体来形成聚焦环。 成形的聚焦环暴露于由四氟化碳气体和氧气中的至少一种产生的用于产生杂质的等离子体，并且杂质被引入存在于聚焦环表面附近的空隙状缺陷。 随后，将正电子注入到其中引入杂质的聚焦环的表面附近，并通过正电子湮灭法检测聚焦环表面附近的缺陷密度。

    Semiconductor processing equipment having improved particle performance
    5.
    发明授权
    Semiconductor processing equipment having improved particle performance 有权
    具有改善粒子性能的半导体加工设备

    公开(公告)号：US06890861B1

    公开(公告)日：2005-05-10

    申请号：US09607922

    申请日：2000-06-30

    申请人： William Frederick Bosch

    发明人： William Frederick Bosch

    IPC分类号： C04B41/00 ,  C04B41/80 ,  C23C16/44 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： C04B41/009 ,  C04B41/0054 ,  C04B41/80 ,  C23C16/4404 ,  H01J37/321 ,  C04B41/53 ,  C04B35/565 ,  C04B35/515

    摘要： A ceramic part having a surface exposed to the interior space, the surface having been shaped and plasma conditioned to reduce particles thereon by contacting the shaped surface with a high intensity plasma. The ceramic part can be made by sintering or machining a chemically deposited material. During processing of semiconductor substrates, particle contamination can be minimized by the ceramic part as a result of the plasma conditioning treatment. The ceramic part can be made of various materials such as alumina, silicon dioxide, quartz, carbon, silicon, silicon carbide, silicon nitride, boron nitride, boron carbide, aluminum nitride or titanium carbide. The ceramic part can be various parts of a vacuum processing chamber such as a liner within a sidewall of the processing chamber, a gas distribution plate supplying the process gas to the processing chamber, a baffle plate of a showerhead assembly, a wafer passage insert, a focus ring surrounding the substrate, an edge ring surrounding an electrode, a plasma screen and/or a window.

    摘要翻译： 具有暴露于内部空间的表面的陶瓷部件，所述表面已经被成形并且被等离子体调节以通过使成形表面与高强度等离子体接触而在其上减少颗粒。 陶瓷部件可以通过烧结或加工化学沉积材料制成。 在半导体基板的加工过程中，由于等离子体调理处理，陶瓷部件可以使颗粒污染最小化。 陶瓷部件可以由各种材料制成，例如氧化铝，二氧化硅，石英，碳，硅，碳化硅，氮化硅，氮化硼，碳化硼，氮化铝或碳化钛。 陶瓷部分可以是真空处理室的各个部分，例如处理室的侧壁内的衬垫，将处理气体供应到处理室的气体分配板，喷头组件的挡板，晶片通道插入件， 围绕基板的聚焦环，围绕电极的边缘环，等离子体屏幕和/或窗口。

    Method of making sintered body and method for manufacturing magnetic head wafer
    6.
    发明申请
    Method of making sintered body and method for manufacturing magnetic head wafer 有权
    制造烧结体的方法和制造磁头晶片的方法

    公开(公告)号：US20040057153A1

    公开(公告)日：2004-03-25

    申请号：US10444133

    申请日：2003-05-23

    发明人： Taisuke Hirooka

    IPC分类号： G11B005/127

    CPC分类号： G11B5/3173 ,  C04B35/117 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C04B2235/3843 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/945 ,  C04B2235/963 ,  G11B5/102 ,  G11B5/3106 ,  G11B5/3166 ,  C04B35/10 ,  C04B35/5611 ,  C04B41/0054

    摘要： A method of marking a sintered body includes the step of preparing the sintered body by sintering a mixture of first and second types of powder particles. The first type of powder particles is made of a first material and the second type of powder particles is made of a second material that has a different etch susceptibility from the first material. The method further includes the step of writing ID information on the surface of the sintered body by forming a first concave region to a depth of at least about 10 nm under the surface of the sintered body and a second concave region under the first concave region, respectively. The first concave region is formed by etching away both the first and second types of powder particles, while the second concave region is formed by etching away only the first type of powder particles.

    摘要翻译： 标记烧结体的方法包括通过烧结第一种和第二种粉末颗粒的混合物来制备烧结体的步骤。 第一种类型的粉末颗粒由第一种材料制成，第二类型的粉末颗粒由与第一种材料具有不同蚀刻敏感性的第二种材料制成。 该方法还包括通过在烧结体的表面上形成至少约10nm的深度的第一凹部区域和在第一凹部区域下方的第二凹部区域，在烧结体的表面上书写ID信息的步骤， 分别。 通过蚀刻掉第一和第二类型的粉末颗粒而形成第一凹入区域，而通过仅蚀刻掉第一类型的粉末颗粒来形成第二凹入区域。

    Method for obtaining a zirconia-based article having a gold metallic appearance
    7.
    发明授权
    Method for obtaining a zirconia-based article having a gold metallic appearance 有权
    用于获得具有金金属外观的氧化锆基制品的方法

    公开(公告)号：US06355202B2

    公开(公告)日：2002-03-12

    申请号：US09850005

    申请日：2001-05-08

    申请人： Christian Verdon

    发明人： Christian Verdon

    IPC分类号： H05B600

    CPC分类号： C04B41/009 ,  C04B41/5062 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  G04B37/1493 ,  C04B41/0072 ,  C04B41/4519 ,  C04B41/455 ,  C04B41/5042 ,  C04B41/0054 ,  C04B41/4529 ,  C04B41/4556 ,  C04B35/48

    摘要： A method for obtaining a finished or semi-finished zirconia-based article having a gold metallic external appearance, the method including the steps of: providing at least one zirconia article previously shaped into its finished or semi-finished shape; partially reducing the zirconia forming said article; placing said article in a reaction vessel in which a plasma is generated from ammonia, or a mixture of nitrogen and hydrogen, or a combination of this gas and this mixture; and maintaining the article in the plasma for a period of at least 5 minutes, while adjusting the conditions so that the average temperature of the article is settled between 500 and 900° C.

    摘要翻译： 一种用于获得具有金金属外观的成品或半成品氧化锆基制品的方法，所述方法包括以下步骤：提供预先形成其成品或半成品形状的至少一种氧化锆制品; 部分地还原形成所述制品的氧化锆; 将所述制品放置在其中由氨或氮和氢的混合物或该气体与该混合物的组合产生等离子体的反应容器中; 并将物品保持在等离子体中至少5分钟的时间，同时调节条件使得物品的平均温度在500-900℃之间沉降。

    Process for oxidizing semiconducting compounds, especially gallium arsenide
    9.
    发明授权
    Process for oxidizing semiconducting compounds, especially gallium arsenide 失效
    氧化半导体化合物，特别是砷化镓的方法

    公开(公告)号：US4433006A

    公开(公告)日：1984-02-21

    申请号：US383179

    申请日：1982-05-28

    申请人： Antonio Cetronio

    发明人： Antonio Cetronio

    IPC分类号： C04B41/00 ,  C04B41/80 ,  C23C8/36 ,  H01L21/316 ,  B05D3/06 ,  B05D3/14 ,  B05D5/12

    CPC分类号： C04B41/009 ,  C04B41/0054 ,  C04B41/80 ,  C23C8/36 ,  H01L21/31654

    摘要： In order to provide a semiconductive substrate such as gallium arsenide with an oxide layer, the substrate is positively biased in a plasma reactor in which an oxidizing gas is ionized by radiofrequency excitation while the substrate is heated to an elevated temperature increasing its conductivity. The substrate may be placed for this purpose on a graphite pedestal which is inductively heated from the same radiofrequency source.

    摘要翻译： 为了提供具有氧化物层的诸如砷化镓的半导体衬底，衬底在等离子体反应器中被正偏压，其中通过射频激发使氧化气体离子化，同时将衬底加热至升高的温度，从而增加其导电性。 衬底可以放置在石墨基座上，该基座从相同的射频源感应加热。