公开(公告)号：US06919563B2

公开(公告)日：2005-07-19

申请号：US10649664

申请日：2003-08-28

申请人： Akira Uedono ,  Atsushi Ogura

发明人： Akira Uedono ,  Atsushi Ogura

IPC分类号： G01N23/225 ,  G01N23/00 ,  G01Q30/08 ,  G01T1/172 ,  G21K1/00 ,  G21K1/10 ,  G21K5/04 ,  H01J37/26

CPC分类号： G01T1/172

摘要： Disclosed is a defect evaluation apparatus comprising a source section having a source for generating positrons and a moderator for decelerating the positrons, a sample holding section for holding a sample to be measured, a transfer section for transferring the positrons from the source section to the sample holding section, and detection means for detecting γ rays emitted from the sample being measured, characterized in that the apparatus further comprises heating means for heating the moderator in a position where there is a possibility of the source being thermally damaged if there is no protection means mentioned below in the source section, and protection means for protecting the source from the heating means and heated moderator when the moderator is being heated using the heating means.

摘要翻译： 公开了一种缺陷评估装置，包括：源部分，具有用于产生正电子的源和用于使正电子减速的调节剂;用于保持待测样品的样品保持部分;用于将正电子从源部分转移到样品的转移部分; 保持部，以及检测装置，用于检测被测试样品发射的γ射线，其特征在于，所述装置还包括加热装置，用于在没有保护装置的情况下，在可能发生源受热损坏的位置加热调节剂 以及保护装置，用于当使用加热装置加热调节剂时，保护来自加热装置和加热的慢化剂的源。

公开(公告)号：US20060096703A1

公开(公告)日：2006-05-11

申请号：US11270671

申请日：2005-11-10

申请人： Tsuyoshi Moriya ,  Kouji Mitsuhashi ,  Akira Uedono

发明人： Tsuyoshi Moriya ,  Kouji Mitsuhashi ,  Akira Uedono

IPC分类号： B05C11/02 ,  C23F1/00

CPC分类号： C04B41/0054 ,  C04B41/009 ,  C04B41/80 ,  H01J37/32642 ,  C04B41/00 ,  C04B35/565

摘要： A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the impurities are introduced to void-like defects existing in the vicinity of a surface of the focus ring. Subsequently, positrons are injected in the vicinity of the surface of the focus ring into which the impurities are introduced, and the defect density in the vicinity of the surface of the focus ring is detected by the positron annihilation method.

摘要翻译： 通过切断通过烧结法或CVD法形成的碳化硅本体来形成聚焦环。 成形的聚焦环暴露于由四氟化碳气体和氧气中的至少一种产生的用于产生杂质的等离子体，并且杂质被引入存在于聚焦环表面附近的空隙状缺陷。 随后，将正电子注入到其中引入杂质的聚焦环的表面附近，并通过正电子湮灭法检测聚焦环表面附近的缺陷密度。

公开(公告)号：US08058186B2

公开(公告)日：2011-11-15

申请号：US11270671

申请日：2005-11-10

申请人： Tsuyoshi Moriya ,  Kouji Mitsuhashi ,  Akira Uedono

发明人： Tsuyoshi Moriya ,  Kouji Mitsuhashi ,  Akira Uedono

IPC分类号： H01L21/26

CPC分类号： C04B41/0054 ,  C04B41/009 ,  C04B41/80 ,  H01J37/32642 ,  C04B41/00 ,  C04B35/565

摘要： A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the impurities are introduced to void-like defects existing in the vicinity of a surface of the focus ring. Subsequently, positrons are injected in the vicinity of the surface of the focus ring into which the impurities are introduced, and the defect density in the vicinity of the surface of the focus ring is detected by the positron annihilation method.

摘要翻译： 通过切断通过烧结法或CVD法形成的碳化硅本体来形成聚焦环。 成形的聚焦环暴露于由四氟化碳气体和氧气中的至少一种产生的用于产生杂质的等离子体，并且杂质被引入存在于聚焦环表面附近的空隙状缺陷。 随后，将正电子注入到其中引入杂质的聚焦环的表面附近，并通过正电子湮灭法检测聚焦环表面附近的缺陷密度。