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    Methods of forming a low resistance silicon-metal contact
    1.
    发明授权
    Methods of forming a low resistance silicon-metal contact 有权
    形成低电阻硅 - 金属接触的方法

    公开(公告)号：US08361834B2

    公开(公告)日：2013-01-29

    申请号：US12714941

    申请日：2010-03-01

    申请人： Dmitry Poplavskyy ,  Malcolm Abbott

    发明人： Dmitry Poplavskyy ,  Malcolm Abbott

    IPC分类号： H01L21/00 ,  H01L21/265 ,  H01L29/10 ,  H01L29/40

    CPC分类号： H01L31/022425 ,  Y02E10/50

    摘要： A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. The method also includes heating the substrate in a baking ambient to a baking temperature and for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a deposition temperature and for a deposition time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a firing time period.

    摘要翻译： 描述了在衬底上形成欧姆接触的方法。 该方法包括在衬底表面上沉积一组硅颗粒。 该方法还包括将烘烤环境中的基材加热到烘烤温度和烘烤时间段，以便产生致密的薄膜油墨图案。 该方法还包括在沉积环境中将基板暴露于扩散炉中的掺杂剂源，沉积环境包括POCl 3，载气N2气体，主N 2气体和反应性O 2气体，其沉积温度和沉积时间 周期，其中在基板表面上形成PSG层。 该方法还包括将驱动环境中的衬底加热到​​驱动温度和驱动时间段; 并沉积氮化硅层。 该方法还包括在一组硅颗粒上沉积一组金属触点; 并将基板加热至烧成温度和烧制时间。

    Methods of etching silicon-containing films on silicon substrates
    5.
    发明授权
    Methods of etching silicon-containing films on silicon substrates 失效
    在硅衬底上蚀刻含硅膜的方法

    公开(公告)号：US07998359B2

    公开(公告)日：2011-08-16

    申请号：US12889958

    申请日：2010-09-24

    申请人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

    发明人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

    IPC分类号： C03C15/00

    CPC分类号： H01L21/30604 ,  H01L21/2255 ,  H01L31/068 ,  Y02E10/547

    摘要： A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.

    摘要翻译： 公开了一种在硅衬底上选择性地蚀刻含硅膜的方法。 该方法包括在硅衬底上沉积含硅膜。 该方法还包括烘烤含硅膜以产生致密的含硅膜，其中致密化膜具有第一厚度。 该方法还包括将硅衬底暴露于包含NH 4 F和HF的水溶液中，其比例为约6:1至约100:1，温度为约20℃至约50℃，而对于 约30秒至约5分钟的时间; 其中除去致密化的含硅膜的约55％至约95％。

    METHODS OF FORMING A DUAL-DOPED EMITTER ON A SUBSTRATE WITH AN INLINE DIFFUSION APPARATUS
    6.
    发明申请
    METHODS OF FORMING A DUAL-DOPED EMITTER ON A SUBSTRATE WITH AN INLINE DIFFUSION APPARATUS 审中-公开
    在具有在线扩散装置的基板上形成双掺杂发射体的方法

    公开(公告)号：US20110183504A1

    公开(公告)日：2011-07-28

    申请号：US12692878

    申请日：2010-01-25

    申请人： Giuseppe Scardera ,  Malcolm Abbott ,  Dmitry Poplavskyy ,  Sunil Shah

    发明人： Giuseppe Scardera ,  Malcolm Abbott ,  Dmitry Poplavskyy ,  Sunil Shah

    IPC分类号： H01L21/225

    CPC分类号： H01L21/228 ,  H01L31/03845

    摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a substrate doped with boron atoms, the substrate comprising a front substrate surface. The method also includes depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents; and heating the substrate in a baking ambient at a baking temperature and for a baking time period wherein a densified ink layer is formed. The method further includes exposing the substrate to a phosphorous dopant source at a drive-in temperature and for a drive-in time period.

    摘要翻译： 公开了形成多掺杂结的方法。 该方法包括提供掺杂有硼原子的衬底，该衬底包括前衬底表面。 该方法还包括在油墨图案的前基材表面上沉积油墨，该油墨包含一组纳米颗粒和一组溶剂; 以及在焙烤温度下烘烤环境中加热基材，并且在形成致密油墨层的烘烤时间段内进行加热。 该方法还包括在驱动温度和驱动时间段内将衬底暴露于磷掺杂剂源。

    METHODS OF FORMING A LOW RESISTANCE SILICON-METAL CONTACT
    8.
    发明申请
    METHODS OF FORMING A LOW RESISTANCE SILICON-METAL CONTACT 有权
    形成低电阻硅金属接触的方法

    公开(公告)号：US20100221903A1

    公开(公告)日：2010-09-02

    申请号：US12714941

    申请日：2010-03-01

    申请人： Dmitry POPLAVSKYY ,  Malcolm Abbott

    发明人： Dmitry POPLAVSKYY ,  Malcolm Abbott

    IPC分类号： H01L21/22

    CPC分类号： H01L31/022425 ,  Y02E10/50

    摘要： A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. The method also includes heating the substrate in a baking ambient to a baking temperature and for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a deposition temperature and for a deposition time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a firing time period.

    摘要翻译： 描述了在衬底上形成欧姆接触的方法。 该方法包括在衬底表面上沉积一组硅颗粒。 该方法还包括将烘烤环境中的基材加热到烘烤温度和烘烤时间段，以便产生致密的薄膜油墨图案。 该方法还包括在沉积环境中将基板暴露于扩散炉中的掺杂剂源，沉积环境包括POCl 3，载气N2气体，主N 2气体和反应性O 2气体，其沉积温度和沉积时间 周期，其中在基板表面上形成PSG层。 该方法还包括将驱动环境中的衬底加热到​​驱动温度和驱动时间段; 并沉积氮化硅层。 该方法还包括在一组硅颗粒上沉积一组金属触点; 并将基板加热至烧成温度和烧制时间。

    Methods of forming a high efficiency solar cell with a localized back surface field
    10.
    发明授权
    Methods of forming a high efficiency solar cell with a localized back surface field 有权
    形成具有局部背面场的高效太阳能电池的方法

    公开(公告)号：US08895348B2

    公开(公告)日：2014-11-25

    申请号：US13687126

    申请日：2012-11-28

    申请人： Innovalight

    发明人： Karim Lofti Bendimerad ,  Daniel Aneurin Inns ,  Dmitry Poplavskyy

    IPC分类号： H01L21/00 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/068

    CPC分类号： H01L31/02168 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front anti-reflective layer formed on the front phosphorous diffusion layer; a front metal electrode on the front surface in ohmic contact with the front phosphorous diffusion layer through the front anti-reflective layer; a rear passivation layer formed on the rear surface; a rear metal electrode in a pattern on the rear surface passing through the rear passivation layer; and a rear p+ diffusion area on the rear surface between the rear passivation layer and a boron-doped region of the silicon substrate, the rear p+ diffusion area surrounding the rear metal electrode.

    摘要翻译： 一种太阳能电池，包括：掺杂硅衬底，所述硅衬底包括前表面和后表面; 形成在前表面上的前磷扩散层; 形成在前磷扩散层上的前防反射层; 前表面上的前金属电极，通过前抗反射层与前磷扩散层欧姆接触; 形成在后表面上的后钝化层; 在后表面上通过后钝化层的图案的后金属电极; 以及在背面钝化层和硅衬底的硼掺杂区域之间的后表面上的后部p +扩散区域，后部p +扩散区域围绕后部金属电极。