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    Methods of etching silicon-containing films on silicon substrates
    2.
    发明授权
    Methods of etching silicon-containing films on silicon substrates 失效
    在硅衬底上蚀刻含硅膜的方法

    公开(公告)号：US07998359B2

    公开(公告)日：2011-08-16

    申请号：US12889958

    申请日：2010-09-24

    申请人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

    发明人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

    IPC分类号： C03C15/00

    CPC分类号： H01L21/30604 ,  H01L21/2255 ,  H01L31/068 ,  Y02E10/547

    摘要： A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.

    摘要翻译： 公开了一种在硅衬底上选择性地蚀刻含硅膜的方法。 该方法包括在硅衬底上沉积含硅膜。 该方法还包括烘烤含硅膜以产生致密的含硅膜，其中致密化膜具有第一厚度。 该方法还包括将硅衬底暴露于包含NH 4 F和HF的水溶液中，其比例为约6:1至约100:1，温度为约20℃至约50℃，而对于 约30秒至约5分钟的时间; 其中除去致密化的含硅膜的约55％至约95％。

    NANOPARTICLES WTIH GRAFTED ORGANIC MOLECULES
    3.
    发明申请
    NANOPARTICLES WTIH GRAFTED ORGANIC MOLECULES 审中-公开
    纳米粒子有机有机分子

    公开(公告)号：US20080220175A1

    公开(公告)日：2008-09-11

    申请号：US12017644

    申请日：2008-01-22

    申请人： Lorenzo Mangolini ,  Uwe Kortshagen ,  Rebecca J. Anthony ,  David Jurbergs ,  Xuegeng Li ,  Elena Rogojina

    发明人： Lorenzo Mangolini ,  Uwe Kortshagen ,  Rebecca J. Anthony ,  David Jurbergs ,  Xuegeng Li ,  Elena Rogojina

    IPC分类号： C23C16/00 ,  B05D1/18

    CPC分类号： B01J19/088 ,  B01J2219/0809 ,  B01J2219/0835 ,  B01J2219/0847 ,  B01J2219/0849 ,  B01J2219/0869 ,  B01J2219/0875 ,  B01J2219/0886 ,  B01J2219/0896 ,  C01B33/02 ,  Y10S977/773

    摘要： An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.

    摘要翻译： 提供了用于生产接枝的IV族纳米颗粒的设备，并且包括IV族纳米颗粒的来源。 腔室被配置为携带气相中的纳米颗粒并且具有入口和出口。 所述入口被配置为耦合到有机分子源，所述有机分子源被配置为向所述室提供有机分子。 排列等离子体源以产生等离子体。 等离子体导致有机分子在室中分解和/或活化并结合到纳米颗粒。 还提供了生产接枝的IV族纳米颗粒的方法，包括在气相中接收IV族纳米颗粒，与纳米颗粒一起产生等离子体，并允许有机分子在等离子体中分解和/或激活并与纳米颗粒结合 。

    Methods of forming a floating junction on a solar cell with a particle masking layer
    5.
    发明授权
    Methods of forming a floating junction on a solar cell with a particle masking layer 有权
    在具有颗粒掩蔽层的太阳能电池上形成浮点的方法

    公开(公告)号：US08513104B2

    公开(公告)日：2013-08-20

    申请号：US13172040

    申请日：2011-06-29

    申请人： Malcolm Abbott ,  Maxim Kelman ,  Eric Rosenfeld ,  Elena Rogojina ,  Giuseppe Scardera

    发明人： Malcolm Abbott ,  Maxim Kelman ,  Eric Rosenfeld ,  Elena Rogojina ,  Giuseppe Scardera

    IPC分类号： H01L21/22 ,  H01L21/38

    CPC分类号： H01L21/2255 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The method also includes exposing the substrate to a set of etchants for a third time period, wherein the front surface PSG layer and the rear surface PSG layer are substantially removed; depositing a front surface SiNx layer and a rear surface SiNx layer; and forming a rear metal contact on the rear surface through the rear surface SiNx layer proximate to the set of patterns.

    摘要翻译： 公开了一种在衬底上形成浮点的方法。 该方法包括提供掺杂有硼原子的衬底，该衬底包括前表面和后表面。 该方法还包括在一组图案中的后表面上沉积一组掩模颗粒; 以及在烘烤环境中将基底加热到第一温度并且持续第一时间段以便产生颗粒掩蔽层。 该方法还包括在第二温度和第二时间段内将衬底暴露于磷沉积环境中，其中形成前表面PSG层，前表面磷扩散层，后表面PSG层和后表面磷扩散层 ，并且其中靠近所述图案集合的所述衬底中的第一磷掺杂剂表面浓度小于所述衬底中不接近所述图案集合的第二掺杂剂表面浓度。 该方法还包括将衬底暴露于一组第三时间的蚀刻剂，其中基本上去除了前表面PSG层和后表面PSG层; 沉积前表面SiNx层和后表面SiNx层; 以及通过靠近所述一组图案的后表面SiNx层在后表面上形成后金属接触。

    METHODS OF ETCHING SILICON-CONTAINING FILMS ON SILICON SUBSTRATES
    6.
    发明申请
    METHODS OF ETCHING SILICON-CONTAINING FILMS ON SILICON SUBSTRATES 失效
    在硅衬底上蚀刻含硅薄膜的方法

    公开(公告)号：US20110028000A1

    公开(公告)日：2011-02-03

    申请号：US12889958

    申请日：2010-09-24

    申请人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

    发明人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30604 ,  H01L21/2255 ,  H01L31/068 ,  Y02E10/547

    摘要： A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.

    摘要翻译： 公开了一种在硅衬底上选择性地蚀刻含硅膜的方法。 该方法包括在硅衬底上沉积含硅膜。 该方法还包括烘烤含硅膜以产生致密的含硅膜，其中致密化膜具有第一厚度。 该方法还包括将硅衬底暴露于包含NH 4 F和HF的水溶液中，其比例为约6:1至约100:1，温度为约20℃至约50℃，而对于 约30秒至约5分钟的时间; 其中除去致密化的含硅膜的约55％至约95％。

    Nanoparticles with grafted organic molecules
    9.
    发明授权
    Nanoparticles with grafted organic molecules 有权
    具有接枝有机分子的纳米颗粒

    公开(公告)号：US08945673B2

    公开(公告)日：2015-02-03

    申请号：US13331168

    申请日：2011-12-20

    申请人： Lorenzo Mangolini ,  Uwe Kortshagen ,  Rebecca J. Anthony ,  David Jurbergs ,  Xuegeng Li ,  Elena Rogojina

    发明人： Lorenzo Mangolini ,  Uwe Kortshagen ,  Rebecca J. Anthony ,  David Jurbergs ,  Xuegeng Li ,  Elena Rogojina

    IPC分类号： B82Y40/00 ,  C23C16/00 ,  B01J19/08 ,  C01B33/02

    CPC分类号： B01J19/088 ,  B01J2219/0809 ,  B01J2219/0835 ,  B01J2219/0847 ,  B01J2219/0849 ,  B01J2219/0869 ,  B01J2219/0875 ,  B01J2219/0886 ,  B01J2219/0896 ,  C01B33/02 ,  Y10S977/773

    摘要： An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.

    摘要翻译： 提供了用于生产接枝的IV族纳米颗粒的设备，并且包括IV族纳米颗粒的来源。 腔室被配置为携带气相中的纳米颗粒并且具有入口和出口。 所述入口被配置为耦合到有机分子源，所述有机分子源被配置为向所述室提供有机分子。 排列等离子体源以产生等离子体。 等离子体导致有机分子在室中分解和/或活化并结合到纳米颗粒。 还提供了生产接枝的IV族纳米颗粒的方法，包括在气相中接收IV族纳米颗粒，与纳米颗粒一起产生等离子体，并允许有机分子在等离子体中分解和/或激活并与纳米颗粒结合 。

    Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles
    10.
    发明授权
    Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles 有权
    使用一组硅纳米颗粒流体原位控制一组掺杂剂扩散分布的方法

    公开(公告)号：US08138070B2

    公开(公告)日：2012-03-20

    申请号：US12626198

    申请日：2009-11-25

    申请人： Maxim Kelman ,  Michael Burrows ,  Dmitry Poplavskyy ,  Giuseppe Scardera ,  Daniel Kray ,  Elena Rogojina

    发明人： Maxim Kelman ,  Michael Burrows ,  Dmitry Poplavskyy ,  Giuseppe Scardera ,  Daniel Kray ,  Elena Rogojina

    IPC分类号： H01L21/04

    CPC分类号： H01L21/2225 ,  H01L21/223 ,  H01L21/2257 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period. The method further includes exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient containing POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas for a second time period; and heating the first substrate and the second substrate in a second drive-in ambient to a third temperature for a third time period.

    摘要翻译： 公开了形成多掺杂结的方法。 该方法包括提供第一基板和第二基板。 该方法还包括在第一基底和第二基底中的每一个的第一表面上沉积第一墨水，第一墨水含有第一组纳米颗粒和第一组溶剂，第一组纳米颗粒含有第一浓度的 第一掺杂剂。 该方法还包括在第一基底和第二基底中的每一个的第二表面上沉积第二墨，第二墨含有第二组纳米颗粒和第二组溶剂，第二组纳米颗粒含有第二浓度的 第二掺杂剂。 该方法还包括将第一衬底和第二衬底放置在背对背配置中; 以及在第一驱动环境中将所述第一基板和所述第二基板加热到第一温度并且持续第一时间段。 该方法还包括将第一衬底和第二衬底以背对背构型暴露于沉积环境中，沉积环境包含POCl 3，载体N2气体，主N 2气体和反应性O 2气体，持续第二时间段; 以及在第二驱动环境中将所述第一基板和所述第二基板加热到第三温度第三时间段。