知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

25 条记录 (耗时 0.027 秒)

    Methods of forming a floating junction on a solar cell with a particle masking layer
    4.
    发明授权
    Methods of forming a floating junction on a solar cell with a particle masking layer 有权
    在具有颗粒掩蔽层的太阳能电池上形成浮点的方法

    公开(公告)号：US08513104B2

    公开(公告)日：2013-08-20

    申请号：US13172040

    申请日：2011-06-29

    申请人： Malcolm Abbott ,  Maxim Kelman ,  Eric Rosenfeld ,  Elena Rogojina ,  Giuseppe Scardera

    发明人： Malcolm Abbott ,  Maxim Kelman ,  Eric Rosenfeld ,  Elena Rogojina ,  Giuseppe Scardera

    IPC分类号： H01L21/22 ,  H01L21/38

    CPC分类号： H01L21/2255 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The method also includes exposing the substrate to a set of etchants for a third time period, wherein the front surface PSG layer and the rear surface PSG layer are substantially removed; depositing a front surface SiNx layer and a rear surface SiNx layer; and forming a rear metal contact on the rear surface through the rear surface SiNx layer proximate to the set of patterns.

    摘要翻译： 公开了一种在衬底上形成浮点的方法。 该方法包括提供掺杂有硼原子的衬底，该衬底包括前表面和后表面。 该方法还包括在一组图案中的后表面上沉积一组掩模颗粒; 以及在烘烤环境中将基底加热到第一温度并且持续第一时间段以便产生颗粒掩蔽层。 该方法还包括在第二温度和第二时间段内将衬底暴露于磷沉积环境中，其中形成前表面PSG层，前表面磷扩散层，后表面PSG层和后表面磷扩散层 ，并且其中靠近所述图案集合的所述衬底中的第一磷掺杂剂表面浓度小于所述衬底中不接近所述图案集合的第二掺杂剂表面浓度。 该方法还包括将衬底暴露于一组第三时间的蚀刻剂，其中基本上去除了前表面PSG层和后表面PSG层; 沉积前表面SiNx层和后表面SiNx层; 以及通过靠近所述一组图案的后表面SiNx层在后表面上形成后金属接触。

    Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles
    6.
    发明授权
    Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles 有权
    使用一组硅纳米颗粒流体原位控制一组掺杂剂扩散分布的方法

    公开(公告)号：US08138070B2

    公开(公告)日：2012-03-20

    申请号：US12626198

    申请日：2009-11-25

    申请人： Maxim Kelman ,  Michael Burrows ,  Dmitry Poplavskyy ,  Giuseppe Scardera ,  Daniel Kray ,  Elena Rogojina

    发明人： Maxim Kelman ,  Michael Burrows ,  Dmitry Poplavskyy ,  Giuseppe Scardera ,  Daniel Kray ,  Elena Rogojina

    IPC分类号： H01L21/04

    CPC分类号： H01L21/2225 ,  H01L21/223 ,  H01L21/2257 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period. The method further includes exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient containing POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas for a second time period; and heating the first substrate and the second substrate in a second drive-in ambient to a third temperature for a third time period.

    摘要翻译： 公开了形成多掺杂结的方法。 该方法包括提供第一基板和第二基板。 该方法还包括在第一基底和第二基底中的每一个的第一表面上沉积第一墨水，第一墨水含有第一组纳米颗粒和第一组溶剂，第一组纳米颗粒含有第一浓度的 第一掺杂剂。 该方法还包括在第一基底和第二基底中的每一个的第二表面上沉积第二墨，第二墨含有第二组纳米颗粒和第二组溶剂，第二组纳米颗粒含有第二浓度的 第二掺杂剂。 该方法还包括将第一衬底和第二衬底放置在背对背配置中; 以及在第一驱动环境中将所述第一基板和所述第二基板加热到第一温度并且持续第一时间段。 该方法还包括将第一衬底和第二衬底以背对背构型暴露于沉积环境中，沉积环境包含POCl 3，载体N2气体，主N 2气体和反应性O 2气体，持续第二时间段; 以及在第二驱动环境中将所述第一基板和所述第二基板加热到第三温度第三时间段。

    METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON
    7.
    发明申请
    METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON 审中-公开
    用多孔硅形成多层结的方法

    公开(公告)号：US20110003466A1

    公开(公告)日：2011-01-06

    申请号：US12794188

    申请日：2010-06-04

    申请人： Giuseppe Scardera ,  Homer Antoniadis ,  Nick Cravalho ,  Maxim Kelman ,  Elena Rogojina ,  Karel Vanheusden

    发明人： Giuseppe Scardera ,  Homer Antoniadis ,  Nick Cravalho ,  Maxim Kelman ,  Elena Rogojina ,  Karel Vanheusden

    IPC分类号： H01L21/22

    CPC分类号： H01L21/2255 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front crystalline substrate surface; and forming a mask on the front crystalline substrate surface, the mask comprising exposed mask areas and non-exposed mask areas. The method also includes exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; and removing the mask. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3 gas, at a first temperature and for a first time period, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient to a second temperature and for a second time period. Wherein a first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance is formed under the front crystalline substrate surface without the porous silicon, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.

    摘要翻译： 公开了一种在衬底上形成多掺杂结的方法。 该方法包括提供掺杂有硼原子的衬底，该衬底包括前结晶衬底表面; 以及在所述前晶体衬底表面上形成掩模，所述掩模包括暴露的掩模区域和未暴露的掩模区域。 该方法还包括将掩模暴露于蚀刻剂，其中多孔硅形成在由暴露的掩模区限定的前结晶衬底表面上; 并取下面罩。 该方法还包括在第一温度和第一时间段内，使沉积环境包括沉积环境包含POCl 3气体的扩散炉中的衬底暴露于掺杂剂源，其中在前衬底表面上形成PSG层; 以及将驱动环境中的衬底加热至第二温度并持续第二时间段。 其中在多孔硅下方形成具有第一薄层电阻的第一扩散区域，并且在没有多孔硅的前结晶衬底表面下形成具有第二薄层电阻的第二扩散区域，并且其中第一薄层电阻显着小于 第二片电阻。

    Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
    8.
    发明授权
    Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor 有权
    用于在流通式等离子体反应器中生产IV族纳米颗粒的方法和装置

    公开(公告)号：US08471170B2

    公开(公告)日：2013-06-25

    申请号：US12113451

    申请日：2008-05-01

    申请人： Xuegeng Li ,  Christopher Alcantara ,  Maxim Kelman ,  Elena Rogojina ,  Eric Schiff ,  Mason Terry ,  Karel Vanheusden

    发明人： Xuegeng Li ,  Christopher Alcantara ,  Maxim Kelman ,  Elena Rogojina ,  Eric Schiff ,  Mason Terry ,  Karel Vanheusden

    IPC分类号： B23K10/00 ,  H01J7/24

    CPC分类号： B82Y30/00 ,  B01J19/088 ,  B01J2219/0809 ,  B01J2219/083 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0875 ,  B01J2219/0883 ,  B01J2219/0894 ,  C01B33/029 ,  H01J37/32541 ,  H01J37/32568

    摘要： A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.

    摘要翻译： 公开了一种用于从前体气体制备一组IV族半导体纳米颗粒的等离子体处理装置。 所述装置包括外电介质管，所述外管包括外管内表面和外管外表面，其中所述外管内表面具有外管内表面蚀刻速率。 所述装置还包括内部介电管，所述内部介电管包括内管外表面，其中所述外管内表面和所述内管外表面限定环形通道，并且其中所述内管外表面具有内管外表面 表面蚀刻速率。 该装置还包括第一外电极，第一外电极具有设置在外管外表面上的第一外电极内表面。 所述装置还包括第一中心电极，所述第一中心电极设置在所述内部电介质管内，所述第一中心电极还被配置为当将第一RF能量源施加到所述第一外部电极之一时被耦合到所述第一外部电极 和第一中心电极; 以及限定在所述第一外部电极和所述中心电极之间的第一反应区域。

    METHODS OF USING A SET OF SILICON NANOPARTICLE FLUIDS TO CONTROL IN SITU A SET OF DOPANT DIFFUSION PROFILES
    10.
    发明申请
    METHODS OF USING A SET OF SILICON NANOPARTICLE FLUIDS TO CONTROL IN SITU A SET OF DOPANT DIFFUSION PROFILES 有权
    使用一套硅纳米颗粒流体控制在一组多晶硅扩散型材中的方法

    公开(公告)号：US20100167510A1

    公开(公告)日：2010-07-01

    申请号：US12626198

    申请日：2009-11-25

    申请人： Maxim Kelman ,  Michael Burrows ,  Dmitry Poplavskyy ,  Giuseppe Scardera ,  Daniel Kray ,  Elena Rogojina

    发明人： Maxim Kelman ,  Michael Burrows ,  Dmitry Poplavskyy ,  Giuseppe Scardera ,  Daniel Kray ,  Elena Rogojina

    IPC分类号： H01L21/22

    CPC分类号： H01L21/2225 ,  H01L21/223 ,  H01L21/2257 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink comprising a first set of nanoparticles and a first set of solvents, the first set of nanoparticles comprising a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink comprising a second set of nanoparticles and a second set of solvents, the second set of nanoparticles comprising a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period. The method further includes exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas for a second time period; and heating the first substrate and the second substrate in a second drive-in ambient to a third temperature for a third time period.

    摘要翻译： 公开了形成多掺杂结的方法。 该方法包括提供第一基板和第二基板。 该方法还包括在第一基底和第二基底中的每一个的第一表面上沉积第一墨水，第一墨水包括第一组纳米颗粒和第一组溶剂，第一组纳米颗粒包含第一浓度的 第一掺杂剂。 所述方法还包括在所述第一基底和所述第二基底中的每一个的第二表面上沉积第二墨，所述第二墨包含第二组纳米颗粒和第二组溶剂，所述第二组纳米颗粒包含第二浓度的 第二掺杂剂。 该方法还包括将第一衬底和第二衬底放置在背对背配置中; 以及在第一驱动环境中将所述第一基板和所述第二基板加热到第一温度并且持续第一时间段。 该方法还包括将第一衬底和第二衬底以背靠背构型暴露于沉积环境中，沉积环境包括POCl 3，载体N2气体，主N 2气体和反应性O 2气体，持续第二时间段; 以及在第二驱动环境中将所述第一基板和所述第二基板加热到第三温度第三时间段。